Abstract: A method for predicting operation effectiveness of a decentralized sewage treatment facility by using a support vector machine, comprising: simultaneously collecting an influent conductivity and an effluent conductivity, and recording operation effectiveness of the decentralized sewage treatment facility; training a training set by using the support vector machine, with the influent conductivity and effluent conductivity as input and the operation effectiveness of decentralized sewage treatment facilities as output, so as to construct a prediction model for the operation effectiveness of decentralized sewage treatment facilities; and collecting the influent conductivity and effluent conductivity of the treatment facilities to be predicted, and inputting them into the prediction model to obtain a predictive result. The method is not only highly accurate, but fast and inexpensive.

Abstract: A method for predicting operation effectiveness of a decentralized sewage treatment facility by using a support vector machine, comprising: simultaneously collecting an influent conductivity and an effluent conductivity, and recording operation effectiveness of the decentralized sewage treatment facility; training a training set by using the support vector machine, with the influent conductivity and effluent conductivity as input and the operation effectiveness of decentralized sewage treatment facilities as output, so as to construct a prediction model for the operation effectiveness of decentralized sewage treatment facilities; and collecting the influent conductivity and effluent conductivity of the treatment facilities to be predicted, and inputting them into the prediction model to obtain a predictive result. The method is not only highly accurate, but fast and inexpensive.

Abstract: A method for predicting a discharge level of an effluent from decentralized sewage treatment facilities, the method including: measuring the conductivity of an influent, the conductivity and suspended solids concentration of an effluent of a plurality of decentralized sewage treatment facilities; repeatedly measuring a pH, a concentration of COD, a concentration of ammonia nitrogen, the concentration of total phosphorus of the effluent of each of the plurality of decentralized sewage treatment facilities; calculating average values of the pH, the concentration of COD, the concentration of ammonia nitrogen, the concentration of total phosphorus; comparing the average values with a local sewage discharge standard, and determining a discharge level of the effluent; constructing a predictive model; and sampling an influent and an effluent of a sewage treatment facility, measuring the conductivity of an influent, the conductivity and suspended solids concentration of the effluent, inputting the obtained data to th

Abstract: A method for predicting a discharge level of an effluent from decentralized sewage treatment facilities, the method including: measuring the conductivity of an influent, the conductivity and suspended solids concentration of an effluent of a plurality of decentralized sewage treatment facilities; repeatedly measuring a pH, a concentration of COD, a concentration of ammonia nitrogen, the concentration of total phosphorus of the effluent of each of the plurality of decentralized sewage treatment facilities; calculating average values of the pH, the concentration of COD, the concentration of ammonia nitrogen, the concentration of total phosphorus; comparing the average values with a local sewage discharge standard, and determining a discharge level of the effluent; constructing a predictive model; and sampling an influent and an effluent of a sewage treatment facility, measuring the conductivity of an influent, the conductivity and suspended solids concentration of the effluent, inputting the obtained data to th

Abstract: The battery management system can automatically re-combine batteries in a battery set in parallel connection or in series connection or in mixed series-parallel connection, or mixed parallel-series connection, and makes each individual cell in a battery being accessible, such that each individual cell can be monitored (i.e. its parameters can be measured) and charged or discharged. Therefore, with this system, batteries can be charged or discharged to their best performance.

Abstract: Present invention relates to apparatus and methods for glasses-less 3D display with “unlimited” number of TV viewers and with flexibility for eye positions, the fundament elements of this invention are the introduction of “eye space” and the circuit unit for shutter pupil control on shutter screen. The method is t 3D display, such as TV's, monitors, smart devices (iphone, ipad, . . . ), movie theaters, games, etc. The method-includes “mimic scene method” which is based on image depth map and “dynamic pinhole shutter method”.

Abstract: Present invention relates to apparatus and methods for integrating both 3D video recording and 3D movies playing back together on intelligent devices or smart devices, wherein the method of the 3D movies recording can increase the view depth beyond human eye capability and the method and apparatus of 3D movies playing back provide large tolerance to eye motion and viewer is able to avoid the suffers from side effects of vertigo, headache, and eye fatigue; wherein intelligent devices is any one of cell-phone, PDA, iPhone / smartPhone, iPad, Google Glass, pocket/tablet PC, GPS, or eBook, laptop or notebook, computer, TV or iTV, etc.

Abstract: This invention provides the method to overcome 4 backwards which limit the manufacturability or production yield rate of Magneto-resistive random access memory (MRAM). The key points of this invention are: (1) providing method to improve the manufacturability through reducing bias variation, by using a compensation module to correct the bias point of extreme cells; (2) providing method to improve the manufacturability through removing outlier cells (called bad cells), by using “writing jump-over” and “reading exclusion” to exclude bad-cells; (3) providing method to reduce the bias point, amplitude and asymmetry variation, using shared fixed-magnetic-reference-layer and proper shape anisotropy; (4) providing method to improve the write-ability, using flipping-assistant-field to speed up STT flipping process by large current, and using heating resistance and heating cells by the same current (including global heating, row heating, column heating, or local cell heating, i.e.

Abstract: This invention provides the method to overcome 4 backwards which limit the manufacturability or production yield rate of Magneto-resistive random access memory (MRAM). The key points of this invention are: (1) providing method to improve the manufacturability through reducing bias variation, by using a compensation module to correct the bias point of extreme cells; (2) providing method to improve the manufacturability through removing outlier cells (called bad cells), by using “writing jump-over” and “reading exclusion” to exclude bad-cells; (3) providing method to reduce the bias point, amplitude and asymmetry variation, using shared fixed-magnetic-reference-layer and proper shape anisotropy; (4) providing method to improve the write-ability, using flipping-assistant-field to speed up STT flipping process by large current, and using heating resistance and heating cells by the same current (including global heating, row heating, column heating, or local cell heating, i.e.

Abstract: This innovation is related to intelligent battery management system and method for optimizing the battery set to the best performance. The management system is supported by a cutting-edge method and corresponding embodiment, which can automatically re-combine batteries in a battery set in parallel connection or in series connection or in mixed series-parallel connection, or mixed parallel-series connection, and makes each individual cell in a battery being accessible, which means each individual cell can be monitored (i.e. its parameters can be measured) and charged or discharged. Therefore, with this system, batteries can be charged or discharged to their best performance.

Abstract: Present invention relates to apparatus and methods for integrating both 3D movies recording and 3D movies playing back together on intelligent devices or smart devices, wherein the method of the 3D movies recording can increase the view depth beyond human eye capability and the method and apparatus of 3D movies playing back provide large tolerance to eye motion and viewer is able to avoid the suffers from side effects of vertigo, headache, and eye fatigue; wherein intelligent devices is any one of cell-phone, PDA, iPhone/smartPhone, iPad, Google Glass, pocket/tablet PC, GPS, or eBook, laptop or notebook, computer, TV or iTV, etc.

Abstract: New method for Image reproduction and recording is based on mechanical-guiding-apparatus-free operating methods, with flexible operations (hand, robot, vehicle), with the means for positioning, processing and controlling, and having exclusive plurality of uses. The system for image reproduction and recording based on this method includes these common apparatuses: head carrier, sprayer/reader or sprayer/reader array, and computer. Additional apparatuses used in wave-based positioning methods or relative-motion-based positioning methods, include operation-unit (OU) and communication-units (CU's), or operation-module (OM) and motion-detectors (MD), or respectively. The MD and OM provide the information of positioning for computer to determines the relative position and direction of the head array on head carrier. The CU's radiate and receive signal needed for determining distance information. The OU processes and converts the received signal into distance-related data and pass to computer.

Abstract: The present invention is directed to a spin valve sensor for use in a data storage system, that is adapted to receive a sense current and produce a GMR effect in response to applied magnetic fields. The spin valve sensor includes first and second ferromagnetic free layers, a spacer layer positioned between the first and second ferromagnetic free layers, and a biasing component. The first ferromagnetic free layer has a magnetization (M1) in a first direction, when in a quiescent (non-biased) state. The second ferromagnetic free layer has a magnetization (M2) in a second direction that is anti-parallel to the first direction, when in a quiescent (non biased) state.

Abstract: A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.

Abstract: A magnetoresistive (MR) sensor for use in a magnetic storage system including a magnetic storage media having multiple concentric microtracks with information stored thereon. The MR sensor includes a plurality of generally parallel layers that form an MR stack. The MR sensor also includes a top shield and a bottom shield that are spaced apart on opposite sides of the MR stack in a longitudinal direction. The Mr sensor further includes a first and a second side shield spaced apart on opposite sides of the MR stack in a transverse direction. The top shield, bottom shield, first side shield and second side shield substantially surround the MR stack.

Abstract: A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.

Abstract: Side-reading of an abutted-junction magnetic transducer is measured by constructing at least one microtrack having a transition density. The transducer is moved relative to the microtrack to identify a plurality of positions of the transducer relative to the microtrack where the transducer provides a predetermined response. The side-reading distance of the transducer is identified from the plurality of positions. In one embodiment, a plurality of microtracks are constructed during different iterations, each having a different transition density, and the positions of the transducer are identified during each iteration relative to the respective microtrack. In another embodiment, the selected transition density has a fundamental frequency, and the position of the transducer is identified relative to the microtrack where the transducer provides the predetermined response at each of a plurality of harmonic frequencies of the fundamental frequency.

Abstract: The present invention is directed to a spin valve sensor for use in a data storage system, that is adapted to receive a sense current and produce a GMR effect in response to applied magnetic fields. The spin valve sensor includes first and second ferromagnetic free layers, a spacer layer positioned between the first and second ferromagnetic free layers, and a biasing component. The first ferromagnetic free layer has a magnetization (M1) in a first direction, when in a quiescent (non-biased) state. The second ferromagnetic free layer has a magnetization (M2) in a second direction that is anti-parallel to the first direction, when in a quiescent (non biased) state.

Abstract: A magnetoresistive (MR) sensor for use in a magnetic storage system including a magnetic storage media having multiple concentric microtracks with information stored thereon. The MR sensor includes a plurality of generally parallel layers that form an MR stack. The MR sensor also includes a top shield and a bottom shield that are spaced apart on opposite sides of the MR stack in a longitudinal direction. The Mr sensor further includes a first and a second side shield spaced apart on opposite sides of the MR stack in a transverse direction. The top shield, bottom shield, first side shield and second side shield substantially surround the MR stack.

Abstract: A magnetic sensor and method for making the sensor are disclosed. The sensor includes a giant-magnetoresistive sensing layer having a ferromagnetic free layer and a hard bias layer to maintain the free layer in a single-domain state or to stabilize the free layer. The hard bias layer has a coercivity of at least 2,000 Oe and a magnetic remnance times thickness at least twice the value of the saturation magnetization times thickness of the free layer. The hard bias layer includes a permanent magnetic layer formed on top of a seed layer made of the alloy TiW or other similar alloys. The seed layer may also be a bi-layer having a layer of TiW or ther similar alloys and a layer of soft magnetic material, with the former in contact with the permanent magnetic layer.