Patents by Inventor Luka Kljucar

Luka Kljucar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11765910
    Abstract: The disclosed technology relates to a selector device for a memory array, and a method of forming the selector device. In some embodiments, the selector device comprises a first electrode layer embedded in an oxide; a second electrode layer arranged above the first electrode layer and separated from the first electrode layer by the oxide; and a semiconductor material forming a semiconductor layer on the top surface of the second electrode layer, and extending through the second electrode layer and the oxide onto the top surface of the first electrode layer, wherein the semiconductor material contacts the first electrode layer and the second electrode layer. In some embodiments, the selector device helps to solve the sneak path problem in the memory array it is inserted into.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: September 19, 2023
    Assignee: IMEC vzw
    Inventors: Gaspard Hiblot, Shamin Houshmand Sharifi, Luka Kljucar
  • Patent number: 11038067
    Abstract: A sensor for measuring mechanical stress in a layered metallization structure such as the back end of line portion of an integrated circuit die is provided. The sensor operates as a field effect transistor comprising a gate electrode, gate dielectric, channel and source and drain electrodes, wherein the gate electrode is a conductor of a first metallization level and the source and drain electrodes are two interconnect vias, connecting the channel to respective conductors in an adjacent level. At least one of the interconnect vias is formed of a material whereof the electrical resistance is sensitive to mechanical stress in the direction of the via. The sensitivity of the electrical resistance to the mechanical stress is sufficient to facilitate measurement of the stress by reading out the drain current of the transistor. The sensor thereby allows monitoring of stress in the BEOL prior to cracking.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: June 15, 2021
    Assignee: IMEC vzw
    Inventors: Gaspard Hiblot, Luka Kljucar
  • Publication number: 20210143213
    Abstract: The disclosed technology relates to a selector device for a memory array, and a method of forming the selector device. In some embodiments, the selector device comprises a first electrode layer embedded in an oxide; a second electrode layer arranged above the first electrode layer and separated from the first electrode layer by the oxide; and a semiconductor material forming a semiconductor layer on the top surface of the second electrode layer, and extending through the second electrode layer and the oxide onto the top surface of the first electrode layer, wherein the semiconductor material contacts the first electrode layer and the second electrode layer. In some embodiments, the selector device helps to solve the sneak path problem in the memory array it is inserted into.
    Type: Application
    Filed: November 6, 2020
    Publication date: May 13, 2021
    Inventors: Gaspard Hiblot, Shamin Houshmand Sharifi, Luka Kljucar
  • Publication number: 20200152804
    Abstract: A sensor for measuring mechanical stress in a layered metallization structure such as the back end of line portion of an integrated circuit die is provided. The sensor operates as a field effect transistor comprising a gate electrode, gate dielectric, channel and source and drain electrodes, wherein the gate electrode is a conductor of a first metallization level and the source and drain electrodes are two interconnect vias, connecting the channel to respective conductors in an adjacent level. At least one of the interconnect vias is formed of a material whereof the electrical resistance is sensitive to mechanical stress in the direction of the via. The sensitivity of the electrical resistance to the mechanical stress is sufficient to facilitate measurement of the stress by reading out the drain current of the transistor. The sensor thereby allows monitoring of stress in the BEOL prior to cracking.
    Type: Application
    Filed: November 7, 2019
    Publication date: May 14, 2020
    Inventors: Gaspard Hiblot, Luka Kljucar