Patents by Inventor Lukas Gerlich

Lukas Gerlich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure including a layer of a first metal between a diffusion barrier layer and a second metal and method for the formation thereof
    Patent number: 9620453
    Abstract: A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first metal is deposited over the semiconductor structure. An electroless deposition process is performed. The electroless deposition process removes a first portion of the layer of first metal from the semiconductor structure and deposits a first layer of a second metal over the semiconductor structure. An electroplating process is performed. The electroplating process deposits a second layer of the second metal over the first layer of second metal. A second portion of the layer of first metal remains in the semiconductor structure.
    Type: Grant
    Filed: October 13, 2014
    Date of Patent: April 11, 2017
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Axel Preusse, Romy Liske, Marcus Wislicenus, Robert Krause, Lukas Gerlich, Benjamin Uhlig, Sascha Bott
  • SEMICONDUCTOR STRUCTURE INCLUDING A LAYER OF A FIRST METAL BETWEEN A DIFFUSION BARRIER LAYER AND A SECOND METAL AND METHOD FOR THE FORMATION THEREOF
    Publication number: 20160104638
    Abstract: A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first metal is deposited over the semiconductor structure. An electroless deposition process is performed. The electroless deposition process removes a first portion of the layer of first metal from the semiconductor structure and deposits a first layer of a second metal over the semiconductor structure. An electroplating process is performed. The electroplating process deposits a second layer of the second metal over the first layer of second metal. A second portion of the layer of first metal remains in the semiconductor structure.
    Type: Application
    Filed: October 13, 2014
    Publication date: April 14, 2016
    Inventors: Axel Preusse, Romy Liske, Marcus Wislicenus, Robert Krause, Lukas Gerlich, Benjamin Uhlig, Sascha Bott