Patents by Inventor Lukas Hofstetter

Lukas Hofstetter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11196415
    Abstract: A system for providing bi-directional power flow and power conditioning for high-voltage applications. The system including a normally-off four-quadrant power electronic switch having two gates and two normally-on junction field-effect transistor. The normally-off four-quadrant power electronic switch and the two normally-on junction field-effect transistors are coupled to one another in a bi-cascode configuration.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: December 7, 2021
    Assignee: ABB SCHWEIZ AG
    Inventors: Pietro Cairoli, Utkarsh Raheja, Thiago-Batista Soeiro, Lukas Hofstetter, Matthias Bator
  • Publication number: 20210091767
    Abstract: A system for providing bi-directional power flow and power conditioning for high-voltage applications. The system including a normally-off four-quadrant power electronic switch having two gates and two normally-on junction field-effect transistor. The normally-off four-quadrant power electronic switch and the two two normally-on junction field-effect transistors are coupled to one another in a bi-cascode configuration.
    Type: Application
    Filed: September 23, 2020
    Publication date: March 25, 2021
    Inventors: Pietro CAIROLI, Utkarsh RAHEJA, Thiago-Batista SOEIRO, Lukas HOFSTETTER, Matthias BATOR
  • Patent number: 10554201
    Abstract: A solid state switch for connecting and disconnecting an electrical device has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. A gate driver is operative to send gate drive signals to the at least one FET-type device and to the at least one thyristor-type device for providing current to the electrical device. The gate driver is constructed to control a split of the current as between the at least one FET-type device and the at least one thyristor-type device.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: February 4, 2020
    Assignee: ABB Schweiz AG
    Inventors: Pietro Cairoli, Lukas Hofstetter, Matthias Bator, Ricardo Bini, Munaf Rahimo
  • Patent number: 10411694
    Abstract: A solid state switch has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. The at least one FET-type device is constructed with a first power loss profile based on a rated current of an electrical device; and the at least one thyristor-type device is constructed with a second power loss profile based on a surge current associated with the electrical device.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: September 10, 2019
    Assignee: ABB Schweiz AG
    Inventors: Pietro Cairoli, Lukas Hofstetter, Matthias Bator, Riccardo Bini, Munaf Rahimo
  • Publication number: 20180026570
    Abstract: A solid state switch has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. The at least one FET-type device is constructed with a first power loss profile based on a rated current of an electrical device; and the at least one thyristor-type device is constructed with a second power loss profile based on a surge current associated with the electrical device.
    Type: Application
    Filed: July 22, 2016
    Publication date: January 25, 2018
    Inventors: Pietro Cairoli, Lukas Hofstetter, Matthias Bator, Riccardo Bini, Munaf Rahimo
  • Publication number: 20180026623
    Abstract: A solid state switch for connecting and disconnecting an electrical device has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. A gate driver is operative to send gate drive signals to the at least one FET-type device and to the at least one thyristor-type device for providing current to the electrical device. The gate driver is constructed to control a split of the current as between the at least one FET-type device and the at least one thyristor-type device.
    Type: Application
    Filed: April 24, 2017
    Publication date: January 25, 2018
    Inventors: Pietro Cairoli, Lukas Hofstetter, Mathias Bator, Ricardo Bini, Munaf Rahimo