Abstract: In an example, a method including dispensing a liquid onto a first portion of a surface of a substrate and dispensing a solution comprising colloidal spheres onto a second portion of the surface of the substrate. The method additionally includes agitating the colloidal spheres to disperse the colloidal spheres along the first portion and the second portion of the surface of the substrate and directing air flow above the colloidal spheres inducing rotation of the colloidal spheres. In another example, a method includes positioning a retaining ring on a surface of a liquid above a substrate below the surface of the liquid and dispensing a solution comprising colloidal spheres onto the surface of the liquid within a surface area of the retaining ring. The method further includes agitating the surface of the liquid and the colloidal spheres to disperse the colloidal spheres along the surface area of the retaining ring.

Abstract: A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.

Abstract: A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.