Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R? are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), or (III) in the gaseous state (I) (II) (III) wherein A is NR, NR2, PR, PR2, O, OR, S, or SR, E is N, NR, P, PR, O or S, n is 1, 2, or 3, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, and A, E, and n are chosen such that the compound of general formula (I), (II), or (III) is electronically neutral.

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), (III), (IV), (V), (VI), or (VII) in the gaseous state (I) (II) (III) (IV) . . . (V) (VI) (VII) wherein A is NR or O, E is CR?, CNR?2, N, PR?2, or SOR?, G is CR? or N, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R? and R? are hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present invention relates to processes for producing microparticles having, in their interior, at least one cavity which is connected via pores to the surface of the microparticles and which have been laden with at least one organic active of low molecular weight. The invention especially relates to a process for loading microparticles with at least one organic active of low molecular weight, wherein the active has been embedded in a matrix and/or the pores of the microparticles have been closed by means of a substance applied to the surface of the microparticles. The invention additionally relates to a process for sealing microparticles laden with at least one organic active of low molecular weight. The invention also relates to compositions of microparticles laden with at least one active of low molecular weight and to the use thereof.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R? are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. The present invention relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semi-metal-containing compound in contact with a compound of general formula (Ia), (Ib), (Ic), (Id) or (Ie), wherein E is Ti, Zr, Hf, V, Nb, or Ta, L1 and L2 is a pentadienyl or a cyclopentadienyl ligand, and X1 and X2 is nothing or a neutral ligand, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25, and R26 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein for compound (Ia), at least one of R1 to R10 contains at least one carbon and/or silicon atom and A is an alkyl group, an alkenyl group, an aryl group or a silyl group.

Abstract: Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (la), (lb), (lc), (Id), (lla), (lib), (lie), or (lid) wherein A is O or NRN, R and RN is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, R1, R2, R3, and R4 is hydrogen, an alkyl group, an alkenyl group, an aryl group, a silyl group, or an ester group, and E is nothing, oxygen, methylene, ethylene, or 1,3-propylene.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.