Publication number: 20240234134
Abstract: In an embodiment a method for producing a growth substrate includes providing a substrate with a main surface, arranging a layer sequence on the main surface of the substrate, wherein the layer sequence comprises at least one semiconductor layer comprising a III-V compound semiconductor material, and annealing the layer sequence on the substrate, wherein the layer sequence comprises at least one intermediate layer and/or wherein a cover layer is arranged on the layer sequence, wherein a temperature during annealing is at least 1400° C., wherein the intermediate layer comprises a material selected from the following group: carbides, nitrides, oxides, oxynitrides, wherein the nitrides are nitrides of silicon, titanium, tantalum, yttrium, hafnium, scandium, tungsten, or zirconium, and wherein the cover layer comprises one of the following materials: tungsten nitride, aluminum carbonitride, molybdenum, tungsten, titanium, tantalum, hafnium, aluminum, titanium tungsten, graphite, or a photoresist.
Type:
Application
Filed:
July 7, 2022
Publication date:
July 11, 2024
Inventors:
Viola Miran Kueller, Adrian Stefan Avramescu, Hans-Jürgen Lugauer, Marc Hoffman, Andreas Waag, Lukas Peters, Christoph Margenfeld