Abstract: Silicon carbide substrates are in demand for high power applications such as electric vehicles, solar panels, and industrial electronics. A physical vapor transport (PVT) reactor for growth of silicon carbide ingots can be improved by attaching a cooling assembly to a top end of a PVT growth crucible. By varying the number, size, and spacing of cooling elements within the cooling assembly, radial temperature variation inside the PVT growth crucible can be adjusted, independent of axial temperature variation. More uniform radial temperature profiles result in lower stress, fewer crystal defects, and improved silicon carbide wafer quality.

Abstract: A growth system is disclosed. The growth system may include a crucible at least partially enclosed by an insulation layer, a growth region located within the crucible and configured to hold a silicon carbide (SiC) seed crystal, a source-material region located within the crucible and configured to hold an SiC source material. The growth system may further include a barrier located within the crucible and configured to separate the source-material region and the growth region. In addition, the growth system may include a heating element located around the crucible and configured together with an opening in the insulation layer to provide a temperature gradient with a decreasing temperature in a direction from the source material toward the growth region. The growth system may also include a vent extending through the barrier from the source-material region to the growth region.

Abstract: A crucible for manufacturing semiconductor crystals may be disposed adjacent to a heating element. The crucible may include a first seed crystal site and a second seed crystal site at opposed ends of the crucible. A compartment may be defined between an outer wall and an inner wall of the crucible, where the inner wall is formed with a porous graphite membrane. Source powder loaded into the compartment may then be heated by the heating element to sublimate and diffuse from the compartment and through the inner wall to provide crystal growth of a first seed crystal at the first seed crystal site and of a second seed crystal at the second seed crystal site.

Abstract: At least one exemplary embodiment is directed to a method of forming a multilayered gettering structure that can be used to control wafer warpage.

Abstract: At least one exemplary embodiment is directed to a method of forming a multilayered Bettering structure that can be used to control wafer warpage.

Abstract: In one embodiment, a multi-layer extrinsic gettering structure includes plurality of polycrystalline semiconductor layers each separated by a dielectric layer.

Abstract: In one embodiment, a multi-layer extrinsic gettering structure includes plurality of polycrystalline semiconductor layers each separated by a dielectric layer.