Abstract: The invention provides a silicon pn based device with different dopant and impurity implanted concentrations strategically placed in the device, the pn junction being reverse biased, such that the 650 nm optical emission is stimulated and enhanced. The invention extends to a silicon avalanche light emitting device comprising a first junction and a second junction, said first junction including a reverse biased excitation zone for injecting high energy carriers in a first direction and said second junction being forward biased so as to inject high density low energy carriers opposite to said first direction, wherein an interaction zone is formed between said first junction and said second junction so as to enhance emission of 650 nm photons through interactions between said high energy carriers and said low energy carriers.

Abstract: The present invention discloses a smart microprocessor and sensor based controller system that enables selective management of energy supply into a household of electrical appliances through individually switching on or off of individual load lines in a domestic household based on external information fed in from external sensors regarding the household's demand, time data and/or tariff data, wherein, based on the information received, the controller system manages the supply of energy to the household such that peak load of an electrical grid is reduced by selectively supplying electrical energy to high household loads, such as swimming pools, at low electrical grid demand time. The controller system includes smart switching devices, microprocessor logic, software algorithms, and timing devices used to control the switching processes.

Abstract: The use of smart microprocessor and sensor based controller system that enables selective management of energy supply into a household of the invention is illustrated and consists of four sub-components i.e., a Grid Power Supply System A, A Power Demand System (B), a Specially Designed Power Distribution Box (C), a Smart Energy Controller (D), a Solar Energy Secondary Power Supply and Timing System Unit E, and a RF Remote Control Unit (G). Energy is supplied through the city network grid (A) to a specially designed power distribution box which redistributes power to separate lines through a series of power relay switches (C1), each serving a different load category e.g., heavy, medium, low, essential lighting, special load systems, requiring special phase requirements (C2 to C6). More than one load can be connected in parallel to a specific line C3 to C6.

Abstract: This invention relates to CMOS based micro-photonic systems comprising an optical source, means for optical transmission, and a detector, wherein the optical source is capable of emitting light having a wavelength being in a range in which a nitride comprising layer of said means for optical transmission is transparent and being below a detection threshold of said detector so as to enable the generation of a micro-photonic system in silicon integrated circuit technology.

Abstract: The present invention relates to a sensor device. More particularly, the invention relates to a CMOS-based micro-optical-electromechanical-sensor (MOEMS) device with silicon light emitting devices, silicon waveguides and silicon detectors being fabricated using current Complementary Metal Oxide Semiconductor (CMOS) technology or Silicon on Insulator (SOI) technology. According to the invention there is provided a sensor comprising: a Silicon-based light emitting structure; an integrated electro-optical mechanical interface structure that is capable to sense mechanical deflections; an integrated electronic driving and processing circuitry so as to detect physical parameters such as vibration, motion, rotation, acceleration.

Abstract: This invention relates to relates to silicon light emitting devices (SiLEDs), and its application into current Complementary Metal Oxide Semiconductor (CMOS) technology, as well into future Silicon on Insulator (SOI) technology. According to the invention, a silicon based light emitting device is designed to operate by means of avalanche carrier multiplication and emitting at the below threshold wavelength detection range for Silicon of 850 nm and such that it is compatible with CMOS silicon nitride, silicon oxi-nitride and polymer waveguide technology. This favors diverse electro-optical system applications such as electro-optical couplers, fast data transfer on and from chip, various optical interconnect configurations as well as diverse on-chip sensor, fluidic and micro-optical-mechanical sensor applications. Under particular operating conditions emissions at specific wavelengths (for example the longer wavelengths) may be favored, while in other cases tuning of the emitted radiation may be obtained.

Abstract: A light emitting device (10) comprises a body (12) of a semiconductor material. A first junction region (14) is formed in the body between a first region (12.1) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction region (16) is formed in the body between the second region (12.2) of the body and a third region (12.3) of the body of the first doping kind. A terminal arrangement (18) is connected to the body for, in use, reverse biasing the first junction region (14) into a breakdown mode and for forward biasing at least part (16.1) of the second junction region (16), to inject carriers towards the first junction region (14). The device (10) is configured so that a first depletion region (20) associated with the reverse biased first junction region (14) punches through to a second depletion region associated with the forward biased second junction region (16).

Abstract: An optical communication system is provided comprising of a three terminal silicon based light emitting device operating by means of avalanche carrier multiplication and emitting at the below threshold wavelength detection range for Silicon of 850 nm; a low loss optical waveguide operating in the below threshold wavelength detection range for Silicon of 850 nm; and an optical detector, wherein a complete and all-silicon optical communication system is formed being capable of transferring electrical signals in terms of optical intensity variations, such intensities then being propagated through the waveguide and being detected by the optical detector; and being converted back to electrical signals. In a particular mode of operation of the system, wavelength modulation may be obtained. In other applications, transponding action and optical amplification may be obtained.

Abstract: A semiconductor light emitting device (10) comprises a semiconductor structure (12) comprising a first body (14) of a first semiconductor material (in this case Ge) comprising a first region of a first doping kind (in this case n) and a second body (18) of a second semiconductor material (in this case Si) comprising a first region of a second doping kind (in this case p). The structure comprises a junction region (15) comprising a first heterojunction (16) formed between the first body (14) and the second body (18) and a pn junction (17) formed between regions of the structure of the first and second doping kinds respectively. A biasing arrangement (20) is connected to the structure for, in use, reverse biasing the pn junction, thereby to cause emission of light.

Abstract: An electro-optical device 10 comprises a body 12 of a semiconductor material, such as silicon. A light source 14 is formed integrally in the body. The device comprises an associated light detector 16 and an optical path providing part 19 having a refractive index and extending between the light source 14 and the detector 16, to provide an optical path 18 having a path length. A sensor 20 cooperates with the optical path providing part 19 and is configured to modulate light emitted by the light source 14, by changing at least one of light absorption characteristics in the optical path by exposing a medium in the optical path to the emitted light, the path length and the refractive index.

Abstract: An optical communication system is provided comprising of a three terminal silicon based light emitting device operating by means of avalanche carrier multiplication and emitting at the below threshold wavelength detection range for Silicon of 850 nm; a low loss optical waveguide operating in the below threshold wavelength detection range for Silicon of 850 nm; and an optical detector, wherein a complete and all-silicon optical communication system is formed being capable of transferring electrical signals in terms of optical intensity variations, such intensities then being propagated through the waveguide and being detected by the optical detector; and being converted back to electrical signals. In a particular mode of operation of the system, wavelength modulation may be obtained. In other applications, transponding action and optical amplification may be obtained.

Abstract: This invention relates to relates to silicon light emitting devices (SiLEDs), and its application into current Complementary Metal Oxide Semiconductor (CMOS) technology, as well into future Silicon on Insulator (SOI) technology. According to the invention, a silicon based light emitting device is designed to operate by means of avalanche carrier multiplication and emitting at the below threshold wavelength detection range for Silicon of 850 nm and such that it is compatible with CMOS silicon nitride, silicon oxi-nitride and polymer waveguide technology. This favours diverse electro-optical system applications such as electro-optical couplers, fast data transfer on and from chip, various optical interconnect configurations as well as diverse on-chip sensor, fluidic and micro-optical-mechanical sensor applications. Under particular operating conditions emissions at specific wavelengths (for example the longer wavelengths) may be favoured, while in other cases tuning of the emitted radiation may be obtained.

Abstract: The present invention relates to a sensor device. More particularly, the invention relates to a CMOS-based micro-optical-electromechanical-sensor (MOEMS) device with silicon light emitting devices, silicon waveguides and silicon detectors being fabricated using current Complementary Metal Oxide Semiconductor (CMOS) technology or Silicon on Insulator (SOI) technology. According to the invention there is provided a sensor comprising: a Silicon-based light emitting structure; an integrated electro-optical mechanical interface structure that is capable to sense mechanical deflections; an integrated electronic driving and processing circuitry so as to detect physical parameters such as vibration, motion, rotation, acceleration.

Abstract: A semiconductor light emitting device (10) comprises a semiconductor structure (12) comprising a first body (14) of a first semiconductor material (in this case Ge) comprising a first region of a first doping kind (in this case n) and a second body (18) of a second semiconductor material (in this case Si) comprising a first region of a second doping kind (in this case p). The structure comprises a junction region (15) comprising a first heterojunction (16) formed between the first body (14) and the second body (18) and a pn junction (17) formed between regions of the structure of the first and second doping kinds respectively. A biasing arrangement (20) is connected to the structure for, in use, reverse biasing the pn junction, thereby to cause emission of light.

Abstract: A light emitting device (10) comprises a body (12) of a semiconductor material. A first junction region (14) is formed in the body between a first region (12.1) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction region (16) is formed in the body between the second region (12.2) of the body and a third region (12.3) of the body of the first doping kind. A terminal arrangement (18) is connected to the body for, in use, reverse biasing the first junction region (14) into a breakdown mode and for forward biasing at least part (16.1) of the second junction region (16), to inject carriers towards the first junction region (14). The device (10) is configured so that a first depletion region (20) associated with the reverse biased first junction region (14) punches through to a second depletion region associated with the forward biased second junction region (16).