Abstract: An interband cascade laser amplifier medium (M) having a number of cascades (C) strung together along a transport direction (T) of charge carriers and each having an electron injector region (I), an amplifier region (V) and an electron collector region (K), wherein the amplifier region (V) has a hole quantum film (1) having a first semiconductor material and an electron quantum film (2) having a second semiconductor material, and wherein the electron collector region (K) has at least one collector quantum film (4) having a third semiconductor material and separated by a first barrier layer (3), and the electron injector region (I) has at least one injector quantum film (5) having a fourth semiconductor material and separated by a second barrier layer (3).

Abstract: A sensor for electromagnetic quantities includes a bistable device whose residence times in the stable states depend on the electromagnetic quantity. The bistable device further includes a switching zone, whose dimension in the direction of a current of charge carriers is smaller than the ballistic mean free path of the charge carriers within the switching zone. An analyzer circuit may be used for generating a sensor output signal depending on the residence times of the bistable device for measuring the electromagnetic quantity. The switching device may be a resonant tunneling diode or a Y-branch nanojunction.

Abstract: An interband cascade laser amplifier medium having an amplifier region (V) comprising a hole quantum film (1) comprising a first semiconductor material and an electron quantum film (2) comprising a second semiconductor material, an electron collector region (K) comprising at least one collector quantum film (4) comprising a third semiconductor material and separated by a first barrier layer (3), and an electron injector region (I) following the latter and comprising at least one injector quantum film (5) comprising a fourth semiconductor material and separated by a second barrier layer (3). The first semiconductor material of the hole quantum film (1) is a III-V compound semiconductor comprising at least four elements, at least two of the elements selected from Ga, In and Al, and at least two of the elements selected from As, Sb, P and N. The amplifier medium exhibits an efficient laser emission at wavelengths above 2.5 ?m.

Abstract: An interband cascade laser amplifier medium having an amplifier region (V) comprising a hole quantum film (1) comprising a first semiconductor material and an electron quantum film (2) comprising a second semiconductor material, an electron collector region (K) comprising at least one collector quantum film (4) comprising a third semiconductor material and separated by a first barrier layer (3), and an electron injector region (I) following the latter and comprising at least one injector quantum film (5) comprising a fourth semiconductor material and separated by a second barrier layer (3). The first semiconductor material of the hole quantum film (1) is a III-V compound semiconductor comprising at least four elements, at least two of the elements selected from Ga, In and Al, and at least two of the elements selected from As, Sb, P and N. The amplifier medium exhibits an efficient laser emission at wavelengths above 2.5 ?m.

Abstract: A sensor for electromagnetic quantities includes a bistable device whose residence times in the stable states depend on the electromagnetic quantity. The bistable device further includes a switching zone, whose dimension in the direction of a current of charge carriers is smaller than the ballistic mean free path of the charge carriers within the switching zone. An analyzer circuit may be used for generating a sensor output signal depending on the residence times of the bistable device for measuring the electromagnetic quantity. The switching device may be a resonant tunneling diode or a Y-branch nanojunction.

Abstract: An electronic device of nanometric dimensions which exhibits non-linear transistor or rectifying action comprises a region (40) fabricated to provide ballistic transport properties for electron flow, with conductance paths (42, 44, 46) having quantum point contacts (40q) formed in region (40), each path having an associated reservoir of electrons, or contact (50), with an electro-chemical potential, and a linear-response conductance which depends on the energy of electrons injected into the path. An alternating voltage Vl, Vr, is applied across conductance paths (44,46), and a rectified voltage Vc is developed at conductance path (42). Altematively, a constant voltage may be applied to terminal (44), to modulate the characteristics of electron flow through conductance paths (42, 46), in a transistor-like manner. The device may perform a logic AND or OR function, or be used as a frequency multiplier.