Abstract: A method determines the carrier lifetime in a point of a surface of a sample, and includes in absence of illumination, measuring, at the point, a parameter P via atomic force microscopy technique (AFM) to obtain a value Pdark. The point is illuminated with a continuous light beam and the parameter P is measured, at the point, via AFM to obtain a value Psat. The point is successively illuminated with continuous modulated light beams each having a different frequency ft that varies between a minimum frequency fmin and a maximum frequency fmax, with the modulated light beams having a duty cycle D. For each modulated light beam, the parameter P is measured, at the point, via AFM in such a way as to obtain a value Ptransi for each frequency fi. The carrier lifetime is calculated on point with the values of Psat, Pdark, the duty cycle D, and fmax.

Abstract: Method for producing nanocrystals of semiconductor, comprising at least: ion bombardment of a thin layer of semiconductor arranged on at least one dielectric layer, achieving at least one among an implantation of ions of at least one chemical element of rare gas type and an implantation of ions of at least one semiconductor element of same nature as that of the thin layer, in at least one part of the thickness of the thin layer; annealing of the thin layer achieving a dewetting of the semiconductor of the thin layer and forming, on the dielectric layer, nanocrystals of semiconductor.

Abstract: Method for producing nanocrystals of semiconductor, comprising at least: ion bombardment of a thin layer of semiconductor arranged on at least one dielectric layer, achieving at least one among an implantation of ions of at least one chemical element of rare gas type and an implantation of ions of at least one semiconductor element of same nature as that of the thin layer, in at least one part of the thickness of the thin layer; annealing of the thin layer achieving a dewetting of the semiconductor of the thin layer and forming, on the dielectric layer, nanocrystals of semiconductor.

Abstract: A method for determining the carrier lifetime in a point of a surface of a sample, includes in absence of illumination, measuring, at the point, a parameter P via atomic force microscopy technique to obtain a value Pdark; illuminating the point with a continuous light beam; measuring, at the point, the parameter P via the atomic force microscopy technique to obtain a value Psat; successively illuminating the point with continuous modulated light beams each having a different frequency fi, the frequency fi varying between a minimum frequency fmin and a maximum frequency fmax, with the modulated light beams having a duty cycle D; for each modulated light beam, measuring, at the point, the parameter P via the atomic force microscopy technique in such a way as to obtain a value Ptransi for each frequency fi; and calculating the carrier lifetime on point by using the following formula: ? = x 0 2 2 + x 0 ? ( D - 1 ) - K S ( P sat - P dark ) - ( 1 + D ) ? f max

Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.

Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.

Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.

Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.