Abstract: An ion implanter is provided, including an ion source and extraction system, arranged to generate a continuous ion beam at a first ion energy, and a linear accelerator, arranged to generate a bunched ion beam from the continuous ion beam, and to accelerate the bunched ion beam to a second ion energy, greater than the first ion energy. As such, the linear accelerator may include a plurality of acceleration stages, where a given acceleration stage of the linear accelerator includes a drift tube assembly, arranged to accelerate the bunched ion beam through a plurality of acceleration gaps. The given acceleration stage may also include a resonator, arranged to deliver an RF voltage signal to the drift tube assembly, and a resonance control circuit, having a variable capacitor that is arranged to adjust a resonator capacitance of the resonator, in order to maintain a resonant frequency of the resonator circuit.

Abstract: A drift tube assembly including a drift tube having a cylindrical main body and a mounting cuff extending from the main body and defining a mounting socket. A mounting device is disposed within the mounting socket and includes an inner sleeve having a tapered exterior surface, a tubular outer sleeve surrounding the inner sleeve and having a tapered interior surface engaging the exterior surface of the inner sleeve, and a nut surrounding the outer and inner sleeves and including a flange extending into a groove formed in an exterior of the outer sleeve, the nut threadedly engaging a threaded portion of the exterior surface of the inner sleeve. A mounting rod extends into a passthrough of the inner sleeve of the mounting device. Tightening the nut causes the inner sleeve to tighten against the mounting rod and causes the outer sleeve to tighten against the mounting cuff.

Abstract: An ion implanter that includes a plurality of RF resonator cavities is disclosed. Each RF resonator cavity includes a resonator coil. A cooling fluid is passed through the resonator coil. A sensor or transducer is used to measure a parameter of the cooling fluid, such as flow rate or pressure, as it exits the cooling fluid source. The measured parameter is then used by a vibration control system to control an actuator assembly located near the resonator coil. The actuator assembly is used to reduce the variations in the parameter, as experienced by the resonator coil. This system may reduce the amount of frequency vibration that the resonator coil experiences.

Abstract: A power feedthrough assembly for a linear accelerator. The power feedthrough assembly may include an insulating housing, comprising a curved ceramic shell, and a conductive rod, coupled to deliver an RF voltage to a given acceleration stage of the linear accelerator, where the conductive rod extends through an aperture in the insulating housing. The power feedthrough assembly may also include a flange, coupled to mechanically connect the insulating housing to a wall of the linear accelerator. As such, the insulating housing may include a coupling structure that couples the insulating housing to the conductive rod and to the flange, wherein the coupling structure comprises at least one protrusion configured to couple with an external structure that is located in the flange or the conductive rod.

Abstract: A linear accelerator apparatus may include a beamline enclosure that defines a polygonal backbone, and a plurality of acceleration stages, disposed along a length of the beamline enclosure. A given acceleration stage may include a drift tube assembly to conduct an ion beam therethrough, a resonator, coupled to deliver an RF signal to the drift tube assembly, and a quadrupole assembly to shape the ion beam. As such, at a first acceleration stage, a first resonator may be disposed along a first side of the polygonal backbone, and at a second acceleration stage, adjacent to and downstream of the first acceleration stage, a second resonator may be disposed along a second side of the polygonal backbone, different from the first side.

Abstract: Embodiments presented herein are directed to radio frequency (RF) grounding in process chambers. In one embodiment, a dielectric plate is disposed between a chamber body and a lid of a process chamber. The dielectric plate extends laterally into a volume defined by the chamber body and the lid. A substrate support is disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region. The peripheral region is radially outward of the central region. The central region has a thickness less than a thickness of the peripheral region. A flange is disposed adjacent to a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.

Abstract: Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft counter-rotatable with the first shaft. The transfer apparatus may include an eccentric hub extending at least partially through the central hub, and which is radially offset from a central axis of the central hub. The transfer apparatus may also include an end effector coupled with the eccentric hub. The end effector may include a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports.

Abstract: An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator including at least one acceleration stage including a resonator and a resonator coil disposed within a resonator chamber, wherein the resonator coil is a tubular body having a plurality of coaxial layers, including an inner layer, a middle layer, and an outer layer, wherein the outer layer is formed of a dielectric material.

Abstract: Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.

Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and methods for cleaning the substrate processing chamber are provided herein. An electrode cleaning ring is disposed in a lower portion of a process volume (e.g., disposed below a substrate support in the process volume). The electrode cleaning ring is a capacitively coupled plasma source. The electrode cleaning ring propagates plasma into the lower portion of the process volume. RF power is provided to the electrode cleaning ring via an RF power feed-through. The RF plasma propagated by the electrode cleaning ring removes deposition residue in the lower portion of the process volume.

Abstract: Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.

Abstract: Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft counter-rotatable with the first shaft. The transfer apparatus may include an eccentric hub extending at least partially through the central hub, and which is radially offset from a central axis of the central hub. The transfer apparatus may also include an end effector coupled with the eccentric hub. The end effector may include a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports.

Abstract: Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.

Abstract: Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft counter-rotatable with the first shaft. The transfer apparatus may include an eccentric hub extending at least partially through the central hub, and which is radially offset from a central axis of the central hub. The transfer apparatus may also include an end effector coupled with the eccentric hub. The end effector may include a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports.

Abstract: Exemplary substrate processing systems may include a transfer region housing defining a transfer region, and including substrate supports and a transfer apparatus. The transfer apparatus may include a central hub having a housing, and including a first shaft and a second shaft. The housing may be coupled with the second shaft, and may define an internal housing volume. The transfer apparatus may include a plurality of arms equal to a number of substrate supports of the plurality of substrate supports. Each arm of the plurality of arms may be coupled about an exterior of the housing. The transfer apparatus may include a plurality of arm hubs disposed within the internal housing volume. Each arm hub of the plurality of arm hubs may be coupled with an arm of the plurality of arms through the housing. The arm hubs may be coupled with the first shaft of the central hub.

Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

Abstract: Exemplary substrate processing systems may include a base. The systems may include a chamber body having a transfer region housing that defines a transfer region. The transfer region housing may include a first portion and a second portion. The systems may include a lid assembly positioned atop the chamber body. The lid assembly may include a lid and a lid stack. The systems may include one or more lift mechanisms that elevate the first portion of the transfer region housing and at least a portion of the lid assembly relative to the base. The first portion and the second portion may mate with one another when the transfer region housing is in an operational configuration. The first portion and the second portion may be separated when the first portion of the transfer region housing is elevated.

Abstract: Embodiments described herein provide a backside gas delivery assembly that prevents inert gas from forming parasitic plasma. The backside gas delivery assembly includes a first gas channel disposed in a stem of a substrate support assembly. The substrate support assembly includes a substrate support having a second gas channel extending from the first gas channel. The backside gas delivery assembly further includes a porous plug disposed within the first gas channel positioned at an interface of the stem and the substrate support, a gas source connected to the first gas channel configured to deliver an inert gas to a backside surface of a substrate disposed on an upper surface of the substrate support, and a gas tube in the first gas channel extending to the porous plug positioned at the interface of the stem and the substrate support.

Abstract: A plasma processing apparatus is provided including a radio frequency power source; a direct current power source; a chamber enclosing a process volume; and a substrate support assembly disposed in the process volume. The substrate support assembly includes a substrate support having a substrate supporting surface; an electrode disposed in the substrate support; and an interconnect assembly coupling the radio frequency power source and the direct current power source with the electrode.

Abstract: Embodiments presented herein are directed to radio frequency (RF) grounding in process chambers. In one embodiment, a dielectric plate is disposed between a chamber body and a lid of a process chamber. The dielectric plate extends laterally into a volume defined by the chamber body and the lid. A substrate support is disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region. The peripheral region is radially outward of the central region. The central region has a thickness less than a thickness of the peripheral region. A flange is disposed adjacent to a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.