Patents by Inventor Luke Hsu

Luke Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photomask and photomask substrate with reduced light scattering properties
    Patent number: 8624345
    Abstract: A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: January 7, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ken Wu, Hung-Chang Hsieh, Chang-Cheng Hung, Luke Hsu, Ren-Guey Hsieh, Hsin-Chang Lee, Chia-Jen Chen
  • PHOTOMASK AND PHOTOMASK SUBSTRATE WITH REDUCED LIGHT SCATTERING PROPERTIES
    Publication number: 20120237861
    Abstract: A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.
    Type: Application
    Filed: June 1, 2012
    Publication date: September 20, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ken Wu, Hung-Chang Hsieh, Chang-Cheng Hung, Luke Hsu, Ren-Guey Hsieh, Hsin-Chang Lee, Chia-Jen Chen
  • Method for forming a robust mask with reduced light scattering
    Patent number: 8198118
    Abstract: A mask and method for forming the same including carrying out a photolithographic patterning process the method including providing a substantially light transparent portion; forming a substantially light shielding layer disposed over the substantially light transparent portion; forming at least one barrier layer disposed over the substantially light shielding layer; forming a resist layer disposed over the at least one barrier layer; patterning the resist layer for producing a circuitry pattern; and, carrying out an etching process according to the circuitry pattern to expose a portion of the substantially light transparent portion to form a mask.
    Type: Grant
    Filed: October 31, 2006
    Date of Patent: June 12, 2012
    Assignee: Taiwan Semiconductor Manufacturing Co.
    Inventors: Ken Wu, Hung-Chang Hsieh, Chang-Cheng Hung, Luke Hsu, Ren-Guey Hsieh, Hsin-Chang Lee, Chia-Jen Chen
  • System and method for providing phase shift mask passivation layer
    Patent number: 7727682
    Abstract: System and method for providing a passivation layer for a phase shift mask (“PSM”) are described. In one embodiment, a PSM comprises a transparent substrate; a phase shift pattern disposed on the transparent substrate; and a passivation layer disposed to substantially cover exposed surfaces of at least a portion of the phase shift pattern.
    Type: Grant
    Filed: March 21, 2007
    Date of Patent: June 1, 2010
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Ting Pan, Ken Wu, Luke Hsu, Yao-Ching Ku
  • System and Method for Providing Phase Shift Mask Passivation Layer
    Publication number: 20080233486
    Abstract: System and method for providing a passivation layer for a phase shift mask (“PSM”) are described. In one embodiment, a PSM comprises a transparent substrate; a phase shift pattern disposed on the transparent substrate; and a passivation layer disposed to substantially cover exposed surfaces of at least a portion of the phase shift pattern.
    Type: Application
    Filed: March 21, 2007
    Publication date: September 25, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Ting Pan, Ken Wu, Luke Hsu, Yao-Ching Ku
  • Method for forming a robust mask with reduced light scattering
    Publication number: 20080102379
    Abstract: A mask and method for forming the same including carrying out a photolithographic patterning process the method including providing a substantially light transparent portion; forming a substantially light shielding layer disposed over the substantially light transparent portion; forming at least one barrier layer disposed over the substantially light shielding layer; forming a resist layer disposed over the at least one barrier layer; patterning the resist layer for producing a circuitry pattern; and, carrying out an etching process according to the circuitry pattern to expose a portion of the substantially light transparent portion to form a mask.
    Type: Application
    Filed: October 31, 2006
    Publication date: May 1, 2008
    Inventors: Ken Wu, Hung-Chang Hsieh, Chang-Cheng Hung, Luke Hsu, Ren-Guey Hsieh, Hsin-Chang Lee, Chia-Jen Chen