Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) design method. The method includes providing an IC design layout of a circuit; applying an electrical patterning (ePatterning) modification to the IC design layout according to an electrical parameter of the circuit and an optical parameter of IC design layout; and thereafter fabricating a mask according to the IC design layout.

Abstract: The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.

Abstract: Semiconductor integrated circuit line structures for improving a process window in the vicinity of dense-to-isolated pattern transition areas and a technique to implement the line structures in the layout process are described in this disclosure. The disclosed structure includes a semiconductor substrate, and a material layer above the substrate. The material layer has a closely spaced dense line structure, an isolated line structure next to the dense line structure, and a dummy line shoulder structure formed in the vicinity of the dense line and the isolated line structures. One end of the dummy line shoulder structure connects to the isolated line structure and another end extends away from the isolated line structure in an orientation substantially perpendicular to the isolated line structure.

Abstract: The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.

Abstract: Semiconductor integrated circuit line structures for improving a process window in the vicinity of dense-to-isolated pattern transition areas and a technique to implement the line structures in the layout process are described in this disclosure. The disclosed structure includes a semiconductor substrate, and a material layer above the substrate. The material layer has a closely spaced dense line structure, an isolated line structure next to the dense line structure, and a dummy line shoulder structure formed in the vicinity of the dense line and the isolated line structures. One end of the dummy line shoulder structure connects to the isolated line structure and another end extends away from the isolated line structure in an orientation substantially perpendicular to the isolated line structure.

Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) design method. The method includes providing an IC design layout of a circuit; applying an electrical patterning (ePatterning) modification to the IC design layout according to an electrical parameter of the circuit and an optical parameter of IC design layout; and thereafter fabricating a mask according to the IC design layout.

Abstract: A photomask including a main feature, corresponding to an integrated circuit feature, and a sub-resolution assist feature (SRAF) is provided. A first imaginary line tangential with a first edge of the main feature and a second imaginary line tangential with the second edge of the main feature define an area adjacent the main feature. A center point of the SRAF lies within this area. The SRAF may be a symmetrical feature. In an embodiment, the center point of the SRAF lies on an imaginary line extending at approximately 45-degree angle from a corner of a main feature.

Abstract: An inflation nozzle structure of an infatable envelope. The inflatable envelope is formed by two envelope membranes the peripheries of which are adhered to each other. The inner membranes are adhered to an edge of the envelope membranes and inward extend from the edge. The two inner membranes are adhered to each other to define an air passage serving as the inflation nozzle. An isolating membrane is sandwiched between the inner membranes near an outer opening of the air passage. Two faces of the isolating membrane are formed by two kinds of membranes with different melting points. When thermally pressed, one face with lower melting point of the isolating membrane is thermally adhered to inner wall of the air passage, while the other face with higher melting point is not adhered. Therefore, when thermally pressing and forming the inflatable envelope and the inflation nozzle, the operation can be continued and speeded without complicated processing procedure.

Abstract: An airtight clip device for inflation nozzle of an air bag. The clip device includes a clip seat, a clip board and a folding section foldably connecting the clip board with the clip seat. The clip seat is disposed with two hook edges on two sides and multiple clip teeth are arranged on the clip seat between the hook edges. Multiple clip teeth are formed on the clip board in cooperation with the clip teeth of the clip seat. The clip board is foldable onto the clip seat to be fixedly inserted between the hook edges thereof with the clip teeth of the clip board engaged with the clip teeth of the clip seat so as to airtightly clip and seal the inflation nozzle.

Abstract: An airtight garment hanging bag has an entrance on lower side for receiving a garment and a clip strip disposed at the entrance, which has a length slightly longer than the width of the entrance. The clip strip is formed with a lengthwise central bending section which divides the clip strip into upper and lower clip plates. The edges of the upper and lower clip plates are respectively formed with a hook section and a latch section, whereby after the garment is placed into the garment bag through the entrance, the bottom edge of the entrance is reversely folded and the clip strip is bent about the bending section so as to engage the upper and lower clip plates with each other by means of the hook section and latch section for airtightly sealing the entrance. A sucking nozzle is disposed on the upper side of the garment bag.

Abstract: A sealing clip strip structure which is an integrated strip plate with a predetermined length. The sealing clip strip is formed with a lengthwise folding groove along a central line of the sealing clip strip, which divides the sealing clip strip into an upper and a lower clip plates. On the edges of the upper and lower clip plates are respectively formed corresponding latch section and hook section, whereby the upper and lower clip plates are folded toward each other about the folding groove to make the latch section latched by the hook section so as to clip and seal an opening of a bag body. At least one end section of the sealing clip strip is obliquely cut into a slope end, whereby after the upper and lower clip plates are folded to clip the opening of the bag body, the end section becomes a disaligned extension section in order to facilitate the opening operation of the sealing clip strip.