Abstract: A vertical gallium nitride (GaN) PN diode uses epitaxial growth of a thick drift region with a very low carrier concentration and a carefully designed multi-zone junction termination extension to achieve high voltage blocking and high-power efficiency. An exemplary large area (1 mm2) diode had a forward pulsed current of 3.5 A, an 8.3 m?-cm2 specific on-resistance, and a 5.3 kV reverse breakdown. A smaller area diode (0.063 mm2) was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 m?-cm2, when accounting for current spreading through the drift region at a 45° angle.

Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.

Abstract: A vertical gallium nitride (GaN) PN diode uses epitaxial growth of a thick drift region with a very low carrier concentration and a carefully designed multi-zone junction termination extension to achieve high voltage blocking and high-power efficiency. An exemplary large area (1 mm2) diode had a forward pulsed current of 3.5 A, an 8.3 m?-cm2 specific on-resistance, and a 5.3 kV reverse breakdown. A smaller area diode (0.063 mm2) was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 m?-cm2, when accounting for current spreading through the drift region at a 45° angle.

Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.

Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.

Abstract: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred <110> orientation texture, which in turn enhances the thermal conductivity of the diamond film.

Abstract: Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.

Abstract: Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.