Patents by Inventor Lulian Nistor

Lulian Nistor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9543305
    Abstract: A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w?), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w?) of each one of the two outer cathode layer regions next to a diode cell neighboring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: January 10, 2017
    Assignee: ABB SCHWEIZ AG
    Inventors: Neophythos Lophitis, Florin Udrea, Umamaheswara Vemulapati, Lulian Nistor, Martin Arnold, Jan Vobecky, Munaf Rahimo
  • Publication number: 20160313191
    Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (Ic) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE?) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE?) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE?).
    Type: Application
    Filed: March 23, 2016
    Publication date: October 27, 2016
    Inventors: Vinoth Sundaramoorthy, Enea Bianda, Richard Bloch, Lulian Nistor, Gerold Knapp
  • Publication number: 20160284708
    Abstract: A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w?), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w?) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.
    Type: Application
    Filed: March 23, 2016
    Publication date: September 29, 2016
    Inventors: Neophythos Lophitis, Florin Udrea, Umamaheswara Vemulapati, lulian Nistor, Martin Arnold, Jan Vobecky, Munaf Rahimo
  • Patent number: 8747659
    Abstract: A process for hydrotreating a first aromatics- and sulfur-containing hydrocarbon feed using a fresh supported CoMo catalyst, includes treating the fresh catalyst under first hydrotreating conditions with a second hydrocarbon feed having a lower aromatics content than the first feed.
    Type: Grant
    Filed: February 23, 2010
    Date of Patent: June 10, 2014
    Assignee: ExxonMobil Research and Engineering Company
    Inventors: Gabor Kiss, Lulian Nistor, John Zengel