Abstract: Analyte sensor apparatus, systems, and methods to reduce sensor drift. An analyte sensor apparatus (102) for detecting an analyte such as glucose in a target environment (10) such as a body tissue may include a plurality of electrodes and a controller. The plurality of electrodes may provide a plurality of electrode signals based on the target environment while disposed in the target environment. The controller may be operatively coupled to the plurality of electrodes and configured to receive the plurality of electrode signals. The controller may further be configured to adjust a voltage of at least one electrode of the plurality of electrodes based on a voltage profile to regenerate one or more electrodes of the plurality of electrodes while the at least one electrode is disposed in the target environment. This may allow to correct an electrode drift without removing the electrode from its target environment.

Abstract: An apparatus includes a first and second elongate member that can releasably couple together to in order to cooperate to clamp and staple tissue, a latch member that can latch the first and second elongate member to clamp tissue, a firing assembly that can sever and staple clamped tissue, and a clamp force measuring assembly. The clamp force measuring assembly can measure a parameter associated with a clamping force imparted on the first and second stapling surfaces while clamping tissue, and process and communicate the measured parameter to be compared with a predetermined limit associated with successful staple formation.

Abstract: An apparatus includes a first and second elongate member that can releasably couple together to in order to cooperate to clamp and staple tissue, a latch member that can latch the first and second elongate member to clamp tissue, a firing assembly that can sever and staple clamped tissue, and a clamp force measuring assembly. The clamp force measuring assembly can measure a parameter associated with a clamping force imparted on the first and second stapling surfaces while clamping tissue, and process and communicate the measured parameter to be compared with a predetermined limit associated with successful staple formation.

Abstract: A method of manufacturing a surgical instrument that includes a tissue contacting surface operable to apply ultrasonic energy or RF energy to tissue. The method includes applying a hydrophobic coating that includes silicone to a base surface of the tissue contacting surface to form an applied coating layer having a coating application thickness. The method also includes removing portions of the applied coating layer with a laser to form a plurality of removed portions of coating. A removal depth of each removed portion of the plurality of removed portions can each be from 50% to 100% of the coating application thickness such that from 10% to 50% of the applied coating layer is removed from the base surface.

Abstract: A method of manufacturing a surgical instrument that includes a tissue contacting surface operable to apply ultrasonic energy or RF energy to tissue. The method includes applying a hydrophobic coating that includes silicone to a base surface of the tissue contacting surface to form an applied coating layer having a coating application thickness. The method also includes removing portions of the applied coating layer with a plasma etching method to form a plurality of removed portions of coating. A removal depth of each removed portion of the plurality of removed portions can each be from 50% to 100% of the coating application thickness such that from 10% to 50% of the applied coating layer is removed from the base surface.

Abstract: An apparatus includes a first and second elongate member that can releasably couple together to in order to cooperate to clamp and staple tissue, a latch member that can latch the first and second elongate member to clamp tissue, a firing assembly that can sever and staple clamped tissue, and a clamp force measuring assembly. The clamp force measuring assembly can measure a parameter associated with a clamping force imparted on the first and second stapling surfaces while clamping tissue, and process and communicate the measured parameter to be compared with a predetermined limit associated with successful staple formation.

Abstract: Various exemplary devices, systems, and methods for multi-layer anti-stick coatings for surgical tools are provided. In general, a method of manufacturing a surgical tool includes forming, using plasma enhanced chemical vapor deposition with hexamethyldisiloxane as a precursor material, a first coating on a conductive tissue treating surface of the end effector and a second jaw component of the end effector, the first coating comprising a first material, wherein the first material is a first silicone material, and applying a second coating on top of the first coating on the first jaw component and the second jaw component, the second coating comprising a second material, wherein the coatings are effective to prevent tissue sticking to the jaws during an electrosurgical sealing procedure.

Abstract: Various exemplary devices, systems, and methods for anti-stick coatings for surgical tools are provided. In general, a method of manufacturing a surgical tool includes forming, using plasma enhanced chemical vapor deposition with hexamethyldisiloxane as a precursor material, a coating on a conductive tissue treating surface of an end effector, the coating comprising a silicone material, wherein the coatings are effective to prevent tissue sticking to the jaws during an electrosurgical procedure.

Abstract: An analyte sensor apparatus for detecting an analyte in a target environment includes a plurality of electrodes and a controller. The plurality of electrodes may be configured to provide a plurality of electrode signals based on a target environment. The plurality of electrodes may include one or more working electrodes, a first reference electrode, and a second reference electrode. The one or more working electrodes may be configured to provide an analyte signal based on a presence of an analyte in the target environment. The first reference electrode may be configured to provide a first baseline signal of the target environment. The second reference electrode may include a different type of electrode than the first reference electrode. The second reference electrode may be configured to provide a second baseline signal of the target environment. The controller may be operatively coupled to the plurality of electrodes.

Abstract: An analyte sensor apparatus for detecting an analyte in a target environment includes a plurality of biotransducers and a controller. The plurality of biotransducers are configured to provide a baseline signal, one or more analyte signals, and at least one error condition signal. The plurality of biotransducers at least one reference biotransducer, one or more working biotransducers, and at least one working as reference biotransducer. The controller is operatively coupled to the plurality of biotransducers and is configured to receive the baseline signal, the one or more analyte signals, and the error correction signal. The controller is further configured to determine and/or output one or more adjusted analyte levels using the baseline signal, the one or more analyte signals, and the error correction signal.

Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.

Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.

Abstract: Stable aqueous polishing compositions that can selectively polish silicon nitride (SiN) films and nearly stop (or polish at very low rates) on silicon oxide films are provided herein. The compositions comprise an anionic abrasive, a nitride removal rate enhancer containing a carboxyl or carboxylate group, water, and optionally, an anionic polymer. The synergistic combination of anionic (negatively charged) abrasives and the nitride removal rate enhancer provide beneficial charge interactions with the dielectric films during CMP, a high SiN rate and selectivity enhancement (over oxide), and stable colloidal dispersed slurries.

Abstract: Stable aqueous polishing compositions that can selectively polish silicon nitride (SiN) films and nearly stop (or polish at very low rates) on silicon oxide films are provided herein. The compositions comprise an anionic abrasive, a nitride removal rate enhancer containing a carboxyl or carboxylate group, water, and optionally, an anionic polymer. The synergistic combination of anionic (negatively charged) abrasives and the nitride removal rate enhancer provide beneficial charge interactions with the dielectric films during CMP, a high SiN rate and selectivity enhancement (over oxide), and stable colloidal dispersed slurries.

Abstract: A method of preparation of a 2-D array of particles comprising: mixing the particles and a first liquid, the first liquid having the properties of being soluble in water and reducing surface tension of a water surface; adding the mixture to the water surface; and transferring the 2-D array onto a solid surface. A composition comprising: a 2-D array of particles; and a polymer substantially enveloping the 2-D array of particles.

Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.

Abstract: A method of preparation of a 2-D array of particles comprising: mixing the particles and a first liquid, the first liquid having the properties of being soluble in water and reducing surface tension of a water surface; adding the mixture to the water surface; and transferring the 2-D array onto a solid surface. A composition comprising: a 2-D array of particles; and a polymer substantially enveloping the 2-D array of particles.

Abstract: Stable aqueous polishing compositions that can selectively polish silicon nitride (SiN) films and nearly stop (or polish at very low rates) on silicon oxide films are provided herein. The compositions comprise an anionic abrasive, a nitride removal rate enhancer containing a carboxyl or carboxylate group, water, and optionally, an anionic polymer. The synergistic combination of anionic (negatively charged) abrasives and the nitride removal rate enhancer provide beneficial charge interactions with the dielectric films during CMP, a high SiN rate and selectivity enhancement (over oxide), and stable colloidal dispersed slurries.

Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.

Abstract: Stable aqueous polishing compositions that can selectively polish silicon nitride (SiN) films and nearly stop (or polish at very low rates) on silicon oxide films are provided herein. The compositions comprise an anionic abrasive, a nitride removal rate enhancer containing a carboxyl or carboxylate group, water, and optionally, an anionic polymer. The synergistic combination of anionic (negatively charged) abrasives and the nitride removal rate enhancer provide beneficial charge interactions with the dielectric films during CMP, a high SiN rate and selectivity enhancement (over oxide), and stable colloidal dispersed slurries.