Abstract: A light emitting device includes a light emitting diode package structure. The light emitting diode package structure includes a circuit structure, a plurality of light emitting diodes, and an encapsulation layer. The light emitting diodes are disposed on the circuit structure and electrically connected to the circuit structure. The encapsulation layer covers top surfaces and side surfaces of the light emitting diodes and a side surface of the circuit structure.

Abstract: A semiconductor device according to the present disclosure includes a first gate structure and a second gate structure aligned along a direction, a first metal layer disposed over the first gate structure, a second metal layer disposed over the second gate structure, and a gate isolation structure extending between the first gate structure and the second gate structure as well as between the first metal layer and the second metal layer.

Abstract: The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Abstract: An integrated circuit (IC) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, and a backside via. The source epitaxial structure and the drain epitaxial structure are respectively on opposite sides of the gate structure. The front-side interconnection structure is on a front-side of the source epitaxial structure and a front-side of the drain epitaxial structure. The backside dielectric layer is on a backside of the source epitaxial structure and a backside of the drain epitaxial structure and has an air gap therein. The backside via extends through the backside dielectric layer to a first one of the source epitaxial structure and the drain epitaxial structure.

Abstract: A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.

Abstract: A manufacturing method of a package-on-package structure includes at least the following steps. Top packages are mounted on a top side of a reconstructed wafer over a flexible tape, where conductive bumps at a bottom side of the reconstructed wafer is attached to the flexible tape, and during the mounting, a shape geometry of the respective conductive bump changes and at least a lower portion of the respective conductive bump is embraced by the flexible tape. The flexible tape is released from the conductive bumps after the mounting.

Abstract: The disclosure introduces a shift register is configured to enter a low power mode by disabling a portion of flip-flops (FFs) that handles upper bits of input data. The shift register includes first FF(s), second FF(s) and gating circuit. The first flip-flop (FF), includes input terminal coupled to first portion of input data. The second FF includes input terminal coupled to second portion of input data, an output terminal, a clock terminal coupled to a clock signal, a power terminal coupled to a supply power. The second portion of the input data is subsequent to the first portion of the input data. The gating circuit is coupled to the output terminal of the first FF, and configured to disable the second FF for storing the second portion of a subsequent input data according to output data currently being stored in the first FF.

Abstract: A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.

Abstract: The present disclosure proposes a service plan automatic generation system and operation method thereof. The operation method includes a method for generating standardized items based on a service record, which includes the following steps: analyzing multiple instances to generate multiple feature tags, generating multiple word frequency vectors corresponding to the feature tags according to the instances, and performing an aggregation procedure for a plurality of times. Each time performing the aggregation procedure includes: executing a clustering algorithm to divide multiple instances into multiple groups, analyzing multiple variable parts and an identical part of multiple feature vectors in each group, outputting the variable parts as feature tag sets, and using the identical part as an index of the group, when a stop condition is detected, the index generated by the aggregation procedure in the last time is outputted as a standardized item.

Abstract: The present disclosure provides a synonym searching method, which includes steps as follows. When receiving the vocabulary and the definition of the vocabulary from the user device, the natural language processing model is used to search the synonym of the vocabulary from the data governance dictionary according to the definition of the vocabulary; after providing the synonym to the user device, feedback information about the synonym is received from the user device, and the feedback information is used as the token of the vocabulary for the natural language processing model.

Abstract: A method for detecting and correcting cycle time includes multiple steps performed by a computing device, and these steps include: obtaining a video from a camera, obtaining a bounding box from an input device, inputting the bounding box and the video to a cycle time detection model to generate a preliminary report, wherein the bounding box is used to set a region of interest in the video, the preliminary report includes a plurality of candidate events, and each candidate event includes a start time and a candidate cycle time, receiving a revision label associated with at least one candidate event from the input device, and tuning a hyper-parameter of the cycle time detection model according to the revision label.

Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.

Abstract: A computing circuit is provided. The computing circuit is disposed in a memory device and electrically coupled to a memory cell of the memory device. The computing circuit includes a weight decoder, a multiplier, an adder tree, and an accumulator. The weight decoder is configured to obtain a compressed weight from the memory cell and generate a decoded weight based on the compressed weight. The multiplier is configured to generate a partial-product by multiplying an input signal with the decoded weight. The adder tree is configured to generate a partial-sum by performing an addition operation based on the partial-product. The accumulator is configured to generate an accumulated sum by performing an accumulation operation based on the partial-sum and output an output signal based on the accumulated sum. The accumulated sum is left shifted based on a shift signal.

Abstract: Disclosed are a signal processing method and an abnormal sound detection system. First, a neural network model is trained, including: (a) randomly selecting a plurality of sample signals from a training database to obtain a combined signal, wherein the training database includes the first sample set belonging to the first classification label and the second sample set belonging to the second classification label, and the number of selected sample signals conforms to the preset number; repeating the said step to obtain a plurality of combined signals and using the combined signals to train the neural network model. Then, a sound signal received from a sound receiving apparatus is inputted to the trained neural network model to output a probability value, and a corresponding notification signal is outputted based on the probability value.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: A user equipment assistance information (UAI) negotiation method, for a user equipment (UE) of mobile communication includes receiving a first OtherConfig element of an RRC reconfiguration message comprising a plurality of configuration parameters with SETUP values from a network terminal; sending a first UAI including a first value of a first configuration parameter of the configuration parameters to the network terminal; and receiving a first RRC reconfiguration message corresponding to the first UAI from the network terminal.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: A throttle control method for a mobile device include collecting input data, generating a first set of user experience indices according to the input data, and checking whether a user experience index of the first set of user experience indices satisfies a UEI threshold. The input data includes common information data, current configuration data and a plurality of throttle control parameters. Each user experience index of the first set of user experience indices is corresponding to at least one of throttle control parameter of the plurality of throttle control parameters.

Abstract: A semiconductor structure includes a semiconductor element and a first bonding structure. The semiconductor element has a first surface and a second surface opposite to the first surface. The first bonding structure is disposed adjacent to the first surface of the semiconductor element, and includes a first electrical connector, a first insulation layer surrounding the first electrical connector and a first conductive layer surrounding the first insulation layer.

Abstract: An automatic robotic arm system and a coordinating method for robotic arm and computer vision thereof are disclosed. A beam-splitting mirror splits an incident light into a visible light and a ranging light and respectively guides to an image capturing device and an optical ranging device arranged in the different reference axes. In a calibration mode, a transformation relation is computed based on a plurality of the calibration postures and corresponding calibration images. In an operation mode, a mechanical space coordinate is determined based on an operation image and the transformation relation, and the robotic arm is controlled to move based on the mechanical space coordinate.