Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first

Abstract: The invention discloses a swinging brake of electric nail gun for restraining a striker to return to a standard position after shooting the nail. The swinging brake is elastically pivoted on a swing seat of a gun frame, and is extended to form a braking end. The braking end can butt a stopping part on the gun frame when a power flywheel driven by the swing seat is at an idle position, so as to restrain the striker that has returned to the standard position. The braking end can also be driven by the swing seat to leave the stopping part when the power flywheel swings to a transmission position, so that the striker can be released from the standard position to slide along the nailing axial direction to shoot the nail. In this way, the striker in an electric nail gun configured with a swinging power flywheel is improved to accurately return to the standard position after nailing.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A semiconductor structure includes a substrate, a gate dielectric layer and a conductive layer that are stacked, and the gate dielectric layer is located between the substrate and the conductive layer. The substrate includes a semiconductor substrate and an insulating substrate which are arranged on the same layer. The conductive layer includes: a gate conductor layer, a projection of which on the substrate covers the semiconductor substrate, and an external connecting layer, a projection of which on the substrate covers the insulating substrate. A groove is formed on a bottom surface, towards the substrate, of the external connecting layer and the groove is filled with an insulator.

Abstract: Disclosed is a method for manufacturing a contact hole, a semiconductor structure and electronic equipment. The method includes: forming a mask layer on an upper end face of a first oxide layer of the semiconductor structure, and exposing a pattern of a target contact hole on the mask layer; exposing a portion, corresponding to a target contact hole, of an upper end face of a contact layer and a portion, corresponding to the target contact hole, of an upper end face of an upper layer structure; depositing a second insulation layer on an etched surface, and depositing a second oxide layer on the second insulation layer; and removing portions, above the upper end face of the first oxide layer, of the second insulation layer and the second oxide layer, and removing a part of the contact layer, and exposing an upper end face of a zeroth layer contact.

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: An air-path structure of a pneumatic nail gun includes a main chamber formed in a gun body, a piston driving chamber and a timekeeping chamber that continuously releases pressurized air to the outside. The gun body is equipped with a trigger valve and a bar valve, and a security chamber and an auxiliary chamber are formed in the trigger valve; the trigger valve controls the pressurized air in the piston driving chamber to be discharged to the outside; and the bar valve controls the pressurized air in the main chamber to go into the piston driving chamber, the timekeeping chamber and the auxiliary chamber. The security chamber is permanently connected to the main chamber for concentrating upon the pressurized air, and the bar valve controls the pressurized air in the main chamber to be discharged into the timekeeping chamber, so as to improve the safety of pneumatic nail gun when used.

Abstract: Disclosed is a method for manufacturing a contact hole, a semiconductor structure and electronic equipment. The method includes: forming a mask layer on an upper end face of a first oxide layer of the semiconductor structure, and exposing a pattern of a target contact hole on the mask layer; exposing a portion, corresponding to a target contact hole, of an upper end face of a contact layer and a portion, corresponding to the target contact hole, of an upper end face of an upper layer structure; depositing a second insulation layer on an etched surface, and depositing a second oxide layer on the second insulation layer; and removing portions, above the upper end face of the first oxide layer, of the second insulation layer and the second oxide layer, and removing a part of the contact layer, and exposing an upper end face of a zeroth layer contact.

Abstract: A semiconductor structure includes a substrate, a gate dielectric layer and a conductive layer that are stacked, and the gate dielectric layer is located between the substrate and the conductive layer. The substrate includes a semiconductor substrate and an insulating substrate which are arranged on the same layer. The conductive layer includes: a gate conductor layer, a projection of which on the substrate covers the semiconductor substrate, and an external connecting layer, a projection of which on the substrate covers the insulating substrate. A groove is formed on a bottom surface, towards the substrate, of the external connecting layer and the groove is filled with an insulator.

Abstract: Disclosed herein are composite materials that comprise one or more nanophosphors capable of converting higher frequency, lower wavelength radiation into visible light. As used, the produced visible light enhances the amount of visible light already present from natural or artificial sources.

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first

Abstract: An air-path structure of a pneumatic nail gun, including a main chamber of pressurized air formed in a gun body, a piston driving chamber and a timekeeping chamber that continuously releases pressurized air to the outside, the gun body is equipped with a trigger valve and a bar valve, and a security chamber and an auxiliary chamber are formed in the trigger valve; the trigger valve can control the pressurized air in the piston driving chamber to be discharged to the outside; and the bar valve can control the pressurized air in the main chamber to go into the piston driving chamber, the timekeeping chamber and the auxiliary chamber; wherein the security chamber is permanently connected to the main chamber for concentrating upon the pressurized air, and the bar valve can control the pressurized air in the main chamber to be discharged into the timekeeping chamber, so as to improve the safety of traditional pneumatic nail guns when used.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a trench formed between the first light-emitting unit and the second light-emitting unit, and exposing the substrate; and a connecting electrode including a first connecting part on the first light-emitting unit and connected to the first semiconductor layer of the first light-emitting unit, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,