Abstract: A semiconductor device includes a semiconductor channel. The semiconductor device includes a metal gate structure disposed over the semiconductor channel. The semiconductor device includes a gate electrode having a bottom surface contacting an upper surface of the metal gate structure. The gate electrode has its side portions extending from its top surface toward the semiconductor fin with a first depth and a central portion extending from its top surface toward the semiconductor fin with a second depth, the first depth being substantially greater than the second depth.

Abstract: Semiconductor structure and methods of forming the same are provided. A semiconductor structure according to the present disclosure include a substrate that includes a first region and a second region adjacent the first region, a first fin disposed over the first region, a second fin disposed over the second region, a first source/drain feature disposed over the first fin and a second source/drain feature disposed over the second fin, and an isolation structure disposed between the first fin and the second fin. The isolation structure has a protruding feature rising above the rest of the isolation structure and the protruding feature is disposed between the first fin and the second fin.

Abstract: Semiconductor structure and methods of forming the same are provided. A semiconductor structure according to the present disclosure include a substrate that includes a first region and a second region adjacent the first region, a first fin disposed over the first region, a second fin disposed over the second region, a first source/drain feature disposed over the first fin and a second source/drain feature disposed over the second fin, and an isolation structure disposed between the first fin and the second fin. The isolation structure has a protruding feature rising above the rest of the isolation structure and the protruding feature is disposed between the first fin and the second fin.

Abstract: An ultrasonic transducer, including a piezoelectric element with physical characteristics of radial resonant frequencies and thickness resonant frequencies, and with an upper surface and a lower surface opposite to each other through the piezoelectric element and a lateral surface connecting the upper surface and the lower surface, and an acoustic matching layer set on the upper surface of the piezoelectric element and having a first resonant matching part and a second resonant matching part, wherein a thickness of the first resonant matching part in a direction perpendicular to the upper surface is greater than a thickness of the second resonant matching part in the direction, and the thickness of the first resonant matching part matches one radial resonant frequency of the piezoelectric element and the thickness of the second resonant matching part matches another radial resonant frequency or one of the thickness resonant frequency of the piezoelectric element.

Abstract: An ultrasonic transducer includes a piezoceramic element with a first surface and a second surface opposite to each other through the piezoceramic element and a lateral surface connecting the first surface and the second surface, an acoustic matching layer with a third surface and a fourth surface opposite to each other through the acoustic matching layer and the third surface connecting with the second surface of the piezoceramic element, a first damping element with a fifth surface and a sixth surface opposite to each other through the first damping element and the sixth surface connecting with the first surface of the piezoceramic element, and a second damping element encapsulating the first damping element and the lateral surface of the piezoceramic element.

Abstract: An ultrasonic transducer, including a piezoelectric element with an upper surface and a lower surface opposite to each other through the piezoelectric element and a lateral surface connecting the upper surface and the lower surface, a first acoustic matching layer with a first surface and a second surface opposite to each other through the first acoustic matching layer, and the first surface of the first acoustic matching layer is connected with the upper surface of the piezoelectric element, and a second acoustic matching layer with a third surface and a fourth surface opposite to each other through the second acoustic matching layer, and the third surface of the second acoustic matching layer is connected with the second surface of the first acoustic matching layer, and the glass transition temperature of the second acoustic matching layer is smaller than the glass transition temperature of the first acoustic matching layer.

Abstract: An integrated circuit includes a first fin, a second fin, and a hybrid fin located between the first fin and the second fin. The hybrid fin is shaped to include a base and a horn extending from the base on a side proximal to the second fin. An n-type epitaxial structure is supported by the first fin, and a p-type epitaxial structure is supported by the second fin. A gap fill or etch stop material is located between the hybrid fin and the second fin of the p-type epitaxial structure. The structure creates additional space to increase the size of the n-type epitaxial structure, improving device performance, and also reduces or eliminates leakage paths that can occur when the location of a metal contact is undesirably shifted.

Abstract: Semiconductor structures and methods of forming the same are provided. An example semiconductor structure includes a fin structure arising from a substrate and extending lengthwise along a direction, an isolation feature over the substrate and around the fin structure, a gate structure wrapping over a channel region of the fin structure, a first gate spacer extending along a sidewall of the gate structure, a second gate spacer over the first gate spacer, a filler dielectric layer over the second gate spacer, an epitaxial feature disposed over a source/drain region of the fin structure, a portion of the epitaxial feature being disposed over the filler dielectric layer, an contact etch stop layer (CESL) over the epitaxial feature and the filler dielectric layer, and an interlayer dielectric (ILD) layer over the CESL. A portion of the CESL extends between the epitaxial feature and the sidewall of gate structure along the direction.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a recess structure in a substrate and forming a first semiconductor layer over the recess structure. The process of forming the first semiconductor layer can include doping first and second portions of the first semiconductor layer with a first n-type dopant having first and second doping concentrations, respectively. The second doping concentration can be greater than the first doping concentration. The method can further include forming a second semiconductor layer over the second portion of the first semiconductor layer. The process of forming the second semiconductor layer can include doping the second semiconductor layer with a second n-type dopant.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a recess structure in a substrate and forming a first semiconductor layer over the recess structure. The process of forming the first semiconductor layer can include doping first and second portions of the first semiconductor layer with a first n-type dopant having first and second doping concentrations, respectively. The second doping concentration can be greater than the first doping concentration. The method can further include forming a second semiconductor layer over the second portion of the first semiconductor layer. The process of forming the second semiconductor layer can include doping the second semiconductor layer with a second n-type dopant.

Abstract: A semiconductor device includes a semiconductor channel. The semiconductor device includes a metal gate structure disposed over the semiconductor channel. The semiconductor device includes a gate electrode having a bottom surface contacting an upper surface of the metal gate structure. The gate electrode has its side portions extending from its top surface toward the semiconductor fin with a first depth and a central portion extending from its top surface toward the semiconductor fin with a second depth, the first depth being substantially greater than the second depth.

Abstract: A bi-directional paper pickup mechanism includes a pickup roller, a fastening structure, an input shaft, a first ratchet element, a second ratchet element, an actuating unit, a first transmission rotor and a second transmission rotor. The pickup roller has an inner space. The fastening structure is disposed in the inner space. The input shaft is accommodated in the inner space, and one end of the input shaft is pivotally connected to the fastening structure. The first ratchet element is mounted around the input shaft. The second ratchet element is mounted around the one end of the input shaft. The actuating unit is fastened around a middle of the input shaft to synchronously rotate with the input shaft. The first transmission rotor is mounted around the one end of the input shaft. The second transmission rotor is mounted around the other end of the input shaft.

Abstract: An image forming apparatus includes a main body, a base, a holder and a connecting rod. The main body has a bottom surface, a top surface, a lower surface, a paper outlet and a paper inlet. The base has a bottom board being adjacent to the paper outlet, at least one vertical board being connected to the bottom board and being pivoted on the main body, and a first hinge being located at the bottom board. The holder has a beam, at least one support arm being connected to the beam, and a second hinge being located at the beam. The tip portion is higher than the vertical board. The connecting rod has opposite end portions being pivoted on the first hinge and the second hinge respectively. As described above, the occupying area is further reduced in an unused status.

Abstract: An ultrasonic transducer, including a piezoelectric element with physical characteristics of radial resonant frequencies and thickness resonant frequencies, and with an upper surface and a lower surface opposite to each other through the piezoelectric element and a lateral surface connecting the upper surface and the lower surface, and an acoustic matching layer set on the upper surface of the piezoelectric element and having a first resonant matching part and a second resonant matching part, wherein a thickness of the first resonant matching part in a direction perpendicular to the upper surface is greater than a thickness of the second resonant matching part in the direction, and the thickness of the first resonant matching part matches one radial resonant frequency of the piezoelectric element and the thickness of the second resonant matching part matches another radial resonant frequency or one of the thickness resonant frequency of the piezoelectric element.

Abstract: An ultrasonic transducer includes a piezoceramic element with a first surface and a second surface opposite to each other through the piezoceramic element and a lateral surface connecting the first surface and the second surface, an acoustic matching layer with a third surface and a fourth surface opposite to each other through the acoustic matching layer and the third surface connecting with the second surface of the piezoceramic element, a first damping element with a fifth surface and a sixth surface opposite to each other through the first damping element and the sixth surface connecting with the first surface of the piezoceramic element, and a second damping element encapsulating the first damping element and the lateral surface of the piezoceramic element.

Abstract: Semiconductor structure and methods of forming the same are provided. A semiconductor structure according to the present disclosure include a substrate that includes a first region and a second region adjacent the first region, a first fin disposed over the first region, a second fin disposed over the second region, a first source/drain feature disposed over the first fin and a second source/drain feature disposed over the second fin, and an isolation structure disposed between the first fin and the second fin. The isolation structure has a protruding feature rising above the rest of the isolation structure and the protruding feature is disposed between the first fin and the second fin.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a recess structure in a substrate and forming a first semiconductor layer over the recess structure. The process of forming the first semiconductor layer can include doping first and second portions of the first semiconductor layer with a first n-type dopant having first and second doping concentrations, respectively. The second doping concentration can be greater than the first doping concentration. The method can further include forming a second semiconductor layer over the second portion of the first semiconductor layer. The process of forming the second semiconductor layer can include doping the second semiconductor layer with a second n-type dopant.

Abstract: An image forming apparatus includes a main body, a base, a holder and a connecting rod. The main body has a bottom surface, a top surface, a lower surface, a paper outlet and a paper inlet. The base has a bottom board being adjacent to the paper outlet, at least one vertical board being connected to the bottom board and being pivoted on the main body, and a first hinge being located at the bottom board. The holder has a beam, at least one support arm being connected to the beam, and a second hinge being located at the beam. The tip portion is higher than the vertical board. The connecting rod has opposite end portions being pivoted on the first hinge and the second hinge respectively. As described above, the occupying area is further reduced in an unused status.

Abstract: An ultrasonic transducer includes a carrier with a first surface and a second surface which are opposite to each other, a piezoceramic element attached on the first surface of the carrier, a first acoustic matching layer with a third surface and a fourth surface which are opposite to each other, the third surface is attached on the second surface of the carrier, wherein the first acoustic matching layer includes a mesh with openings, and the thickness of first acoustic matching layer is smaller than ¼ wavelength of an ultrasonic wave emitted by the piezoceramic element in the first acoustic matching layer in an operating frequency, and a total area of the openings of mesh is larger than 30% area of the third surface of first acoustic matching layer, and a second acoustic matching layer disposed on the fourth surface of the first acoustic matching layer.

Abstract: An ultrasonic transducer includes a piezoceramic element, a first acoustic matching layer with extending sidewall attaching the lateral surface of the piezoceramic element, wherein the thickness of the first acoustic matching layer is smaller than ¼ wavelength of an ultrasonic wave emitted by the piezoceramic element in the first acoustic matching layer in an operating frequency of the ultrasonic transducer, and the height of the sidewall of the first acoustic matching layer is larger than 1/20 height of the lateral surface of the piezoceramic element, and a second acoustic matching layer attaching the first acoustic matching layer.