Abstract: A forming operation of resistive memory device is provided. The operation includes: applying a pre-forming gate voltage and a pre-forming bit line voltage to a target memory cell; performing a dense switching forming operation, wherein the dense switching forming operation includes alternately performing dense set operations and dense reset operations on the target memory cell, wherein the dense set operation includes applying a dense switching gate voltage and a dense set bit line voltage; and performing a normal set operation on the target memory cell, wherein the normal set operation includes applying a normal set gate voltage and a normal set bit line voltage to the target memory cell, the normal set gate voltage is greater than the pre-forming gate voltage and the dense switching gate voltage, and the normal set bit line voltage is less than the pre-forming bit line voltage and the dense set bit line voltage.

Abstract: A chemical bath deposition system is used for forming a buffer layer and a ZnO window layer on a back electrode substrate having a photoelectric transducing layer. The chemical bath deposition system includes a first bath tank and a second bath tank. The first bath tank is used for storing a buffer-layer solution. The buffer-layer solution forms the buffer layer on the photoelectric transducing layer when the back electrode substrate is immersed in the buffer-layer solution. The second bath tank is for storing a window-layer solution. The window-layer solution forms the ZnO window layer on the buffer layer when the back electrode substrate is immersed in the window-layer solution. The first bath tank and the second bath tank are in an in-line arrangement.

Abstract: A chemical bath deposition system is used for forming a buffer layer on a back electrode substrate having a photoelectric transducing layer. The chemical bath deposition system includes a chemical bath tank, a chemical-solution purification device, and a dosing device. The chemical bath tank is used for storing a buffer-layer solution including cation and anion. The cation is adapted to react with the anion to form the buffer layer when the back electrode substrate is immersed in the buffer-layer solution. The chemical-solution purification device is communicated with the chemical bath tank for removing residual cation to obtain a purified solution after the cation reacts with the anion to form the buffer layer. The dosing device is for performing compensation of the cation according to a component ratio of a purified solution.