Abstract: A white LED having a photoluminescent layer is provided, which includes a sapphire substrate, a gallium nitride buffer layer, an n-type gallium nitride layer, an aluminium gallium nitride multiquantum well, a p-type gallium nitride layer, a transparent conductive layer, a terbium-doped indium oxide layer as photoluminescent layer, a negative electrode, and a positive electrode, wherein the gallium nitride buffer layer, the n-type gallium nitride layer, the aluminium gallium nitride multiquantum well, the p-type gallium nitride layer, the transparent conductive layer, the terbium-doped indium oxide layer are sequentially formed on the sapphire substrate, and the negative electrode is formed on the exposed portion of the n-type gallium nitride layer and is electrically connected to the negative terminal V? of the power source, and the positive electrode is formed on the terbium-doped indium oxide layer and is electrically connected to the positive terminal V+ of the power source.

Abstract: A white light emitting diode (LED) is provided, which includes a reflective mirror arranged on the light emitting path of a blue or an ultra violet LED die at an appropriate angle. Phosphors are coated on the reflective mirror, the emitting plane of the LED, or both so that the phosphors are excited by the blue or UV lights emitted by the LED die to produce white lights. The present invention provides a white LED having a long lifetime and a uniform light color by separating the phosphors from the LED die, and by allowing the lights emitted from the LED die to undergo several excitations with the phosphors.

Abstract: A white light emitting diode (LED) is provided, which includes a reflective mirror arranged on the light emitting path of a blue or an ultra violet LED die at an appropriate angle. Phosphors are coated on the reflective mirror, the emitting plane of the LED, or both so that the phosphors are excited by the blue or UV lights emitted by the LED die to produce white lights. The present invention provides a white LED having a long lifetime and a uniform light color by separating the phosphors from the LED die, and by allowing the lights emitted from the LED die to undergo several excitations with the phosphors.

Abstract: A umbrella includes a shank having a tip and a handle opposite to the tip, a bracket having first ends pivotally connected to the shank and second ends pivotally connected to skeletons each having a first end pivotally connected to the shank and second end divergently extending out from the shank, a canopy on top of the skeletons and the bracket and having the tip extending out of the canopy, a first illuminator received in the handle to light the handle and a second illuminator received in the shank to light the tip.

Abstract: A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a multi-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for a p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for an n-type ohmic contact layer; and finally, forming pads on both first and second ohmic contact electrodes.

Abstract: A light emitting diode (LED) structure and manufacture method thereof are disclosed, wherein a buffer layer is grown on a substrate and then an LED structural layer is grown on the buffer layer. The LED structural layer comprises a p-type quantum-dot epitaxial layer on a p-type GaN layer. As the p-type quantum-dot epitaxial layer has a coarsening and scattering effect the path of light emitted from an INGaN multiple-quantum-well structural layer is changed. Therefore, it is possible to decrease the probability of total reflection and thereby increase the light-emitting efficiency of LED.

Abstract: A light-emitting diode device is provided with the following manufacturing method: forming an n-GaN layer on a substrate; growing an SiO2 layer on the n-GaN surface, and using the photo-lithography process to expose the n-GaN within the mesa area; using MOCVD to grow an LED structure in the epitaxy within the mesa area, the formed structure being a p-n coplanar structure due to the selective area characteristic; and finally, forming the electrodes on the structure to complete an LED device. The device can be manufactured without the etching process to form the p-n coplanar structure. In comparison to other conventional manufacturing methods, the method simplifies the manufacturing process, and avoids many problems associated with etching, including non-uniform etching, overly rough surface, etching damages, and current leakage. Furthermore, SiO2 is used as a scattering layer to prevent emitted light from internally reflected, and therefore, improves the external quantum efficiency.

Abstract: A nitride-based light-emitting diode is provided, including a substrate having a light extraction layer grown on the substrate, and a nitride semiconductor epitaxy layer grown on the light extraction layer. The external quantum efficiency is improved by changing the traveling path of the emitted light and by matching the refraction index between the light extraction layer and the substrate. Also, a high power nitride-based light-emitting diode having a sacrificial layer is disclosed. A sacrificial layer is used for growing a light-emitting structure, and a binding layer made of two or more metals or alloys is used to bind the grown light-emitting structure and a substrate with high thermoconductivity. The sacrificial layer is later entirely etched away with a chemical solution used in a chemical etching process, and the nitrogen epitaxy structure is placed on the substrate with high thermoconductivity so that the diode can operate at high electrical current to improve external quantum efficiency.

Abstract: A method for manufacturing GaN-based light-emitting diode (LED) is provides with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a mutli-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for said p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for said n-type ohmic contact layer; and finally, forming pads on both said first ohmic contact electrode and said second ohmic contact electrode.

Abstract: A GaN semiconductor stack layer is formed on top of a substrate for manufacturing a light emitting diode. The GaN semiconductor stack layer includes, from the bottom up, an N-type GaN contact layer, a light emitting stack layer and a P-type contact layer. The next step is to form a digital transparent layer on the P-type GaN contact layer, then use dry etching technique to etch downward through the digital transparent layer, the P-type GaN contact layer, the light emitting layer, the N-type GaN contact layer, and form an N-metal forming area within the N-type GaN contact layer. The next step is to form a first ohmic contact electrode on the P-type contact layer to serve as P-type ohmic contact, and a second ohmic contact electrode on the N-metal forming area to serve as N-type ohmic contact. Finally, a bump pad is formed on the first ohmic contact electrode and the second ohmic contact electrode, respectively.

Abstract: The present invention provides a structure and a manufacturing method of GaN light emitting diodes. First, a substrate is provided. Then, a GaN semiconductor stack layer is formed on top of the substrate. The said GaN semiconductor stack layer includes, from the bottom up, an N-type GaN contact layer, a light emitting stack layer and a P-type contact layer. The next step is to form a digital transparent layer on said P-type GaN contact layer, then use dry etching technique to etch downward through the digital transparent layer, the P-type GaN contact layer, the light emitting layer, the N-type GaN contact layer, and form an N-metal forming area within the N-type GaN contact layer. The next step is to form a first ohmic contact electrode on the P-type contact layer to serve as P-type ohmic contact, and a second ohmic contact electrode on the N-metal forming area to serve as N-type ohmic contact.

Abstract: A light emitting diode (LED) structure and manufacture method thereof are disclosed, wherein a buffer layer is grown on a substrate and then an LED structural layer is grown on the buffer layer. The LED structural layer comprises a p-type quantum-dot epitaxial layer on a p-type GaN layer. As the p-type quantum-dot epitaxial layer has a coarsening and scattering effect, the path of light emitted from an INGaN multiple-quantum-well structural layer is changed. Therefore, it is possible to lessen the probability of total reflection and thereby heighten the light-emitting efficiency of LED.

Abstract: A white LED device includes a member, a plurality of LEDs, fixed on the member, the LEDS further comprising blue GaN LEDs, a reflector, in parabolic shape, to encase thed member and the plurality of LEDs, yellow phosphor, coated on the surface of the reflector facing the LEDs, and a supporting component, for connecting the member and the reflector in order to connect the LEDs, the member and the reflector together. The main feature of the present invention includes that the LEDs emit blue light when positively biased. The blue light triggers yellow phosphor to generate a yellow light, and the blue light mixed with the yellow light to become a white light. The white light is reflected by the reflector to project onto target objects.

Abstract: A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation layer selectively, and an n-GaN layer, an active layer, and a p-GaN layer on the buffer layer one after another.

Abstract: The present invention relates to a light-emitting diode structure for increasing the equivalent conductivity of the light-emitting diode and does not necessary to change the thickness of the epitaxy. The structure of the present invention comprises inserting a higher electrical n-type conductivity layer in the epitaxial structure of the light-emitting diode. Furthermore, a tunneling layer made of higher density p-type and n-type materials is inserted in between. Under voltage bias, the current will run through electrode and across the low resistance layer by means of bias/tunneling effect, and finally reach the easily conductive n-type GaN layer, then the current is moving along the p/n junction and arrive at the bottom of the emitting layer. Then after a breakdown/tunneling effect, the current enter into p-type GaN layer and then into the emitting layer for recombination and radiation.

Abstract: The present invention provides a structure and a manufacturing method of GaN light emitting diodes. First, a substrate is provided. Then, a GaN semiconductor stack layer is formed on top of the substrate. The said GaN semiconductor stack layer includes, from the bottom up, an N-type GaN contact layer, a light emitting stack layer and a P-type contact layer. The next step is to form a digital transparent layer on said P-type GaN contact layer, then use dry etching technique to etch downward through the digital transparent layer, the P-type GaN contact layer, the light emitting layer, the N-type GaN contact layer, and form an N-metal forming area within the N-type GaN contact layer. The next step is to form a first ohmic contact electrode on the P-type contact layer to serve as P-type ohmic contact, and a second ohmic contact II electrode on the N-metal forming area to serve as N-type ohmic contact.

Abstract: A method for manufacturing GaN-based LED (Gallium-Nitride based Light-Emitting Diode) is provided for remedy of the defect of central notch in the far field beam pattern of a conventional GaN-based LED by relocating a pair of P-and N-electrodes and reforming the shape of an illuminating surface thereof.

Abstract: A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a transparent substrate of glass or quartz to the light emitting region and then removing the temporary substrate. A metal bonding agent also serving as an ohmic contact layer with LED is used to bond the transparent substrate to form a dual substrate LED element which is then heated in a wafer holding device that includes a graphite lower chamber and a graphite upper cover with a stainless steel screw. Because of the different thermal expansion coefficients between stainless and graphite, the stainless steel screw applies a pressure to the dual substrate LED element during the heating process to assist the bonding of the transparent substrate.

Abstract: A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a transparent substrate of glass or quartz to the light emitting region and then removing the temporary substrate. A metal bonding agent also serving as an ohmic contact layer with LED is used to bond the transparent substrate to form a dual substrate LED element which is then heated in a wafer holding device that includes a graphite lower chamber and a graphite upper cover with a stainless steel screw. Because of the different thermal expansion coefficients between stainless and graphite, the stainless steel screw applies a pressure to the dual substrate LED element during the heating process to assist the bonding of the transparent substrate.

Abstract: A manufacturing method and its structure of a gallium nitride-based blue light emitting diode (LED) ohmic electrodes and a transparent conductive layer (TCL), which forms a thin composite layer upon P type gallium nitride and a composite thin film ohmic electrodes upon P type gallium nitride epitaxial layer and N type gallium nitride epitaxial layer, respectively. Heat treatment is applied to said composite thin film layer and composite thin film ohmic electrodes to obtain the optimized ohmic properties and transparency so as to uniformly disperse the injected current throughout the N type electrode.