Abstract: A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (Cu2S) or cuprous selenide (Cu2Se) target. Then, a CIGS thin film is further provided on the thermal expansion buffer layer. Finally, a thermal treatment is conducted for melting to integrate the copper ingredients of different thin film layers, thus improving the bondability between the thin film layers and preventing the cracking or the peeling off of the thin film layers caused by the thermal expansion difference.

Abstract: To prevent the peak power/current consumption from exceeding a permitted level when more than one active mechanical mechanism of an electronic device (e.g., an optical storage apparatus) is involved in accomplishing a particular task, a method of controlling the electronic device is provided. The electronic device has a plurality of mechanical mechanisms including at least a first mechanical mechanism and a second mechanical mechanism. The method includes following steps: driving the first mechanical mechanism by applying a first control signal to the first mechanical mechanism; driving the second mechanical mechanism by applying a second control signal to the second mechanical mechanism; comparing the first control signal with a first predetermined threshold, and accordingly generating a first comparison result; and selectively adjusting the second control signal according to at least the first comparison result.

Abstract: A moisture-vapor-permeable and water-resistant fiber involves a layer of base fabric, a moisture-vapor-permeable layer, and a water absorption layer. The moisture vapor permeable layer is obtained by coating or laminating the inner side of the fabric with a moisture-vapor-permeable resin, which prohibits the penetration of the water droplets but allows the penetration of the moisture vapor molecules. The moisture absorption layer with intricate and colorful design is composed of binding resin blended with fiber powder and/or inorganic powder, and which is dot-coated or dot-printed onto the inner side of the moisture-vapor-permeable and water-resistant layer. The fiber powder or inorganic powder is highly hydrophilic and highly absorbent in its moisture absorption ability, which, when the clothes are fabricated, can prevent the penetration of raindrops but allows the transmission of the evaporated vapor of sweat through the fabric. Moreover, it is capable of absorbing plentiful amount of sweat.

Abstract: A method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition is provided.

Abstract: A method and a system for forming a copper indium gallium sulfur selenide (CIGSSe) absorption layer and a cadmium sulfide (CdS) buffer layer under non-vacuum condition is disclosed. A coating layer is formed on the back electrode layer on the substrate by mixing the slurry on the back electrode layer, and the coating layer formed on the back electrode layer is densified by a densification device after initially dried, and then a primary selenization/sulfurization reaction process is carried out to form a primary CIGSSe layer, and then a thermal process is carried out to improve the lattice match of the primary CIGSSe layer, and then an impurity cleaning process is carried out by using potassium cyanide or bromide to remove the impurities of cuprous selenide and copper sulfide, and then a rear-stage selenization/sulfurization reaction process is carried out to produce the required rear-stage CIGSSe absorption layer.

Abstract: A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. The alloy thin film layer is provided between the molybdenum thin film layer and the CIGS thin film layer, serving as a conductive layer of the CIGS solar cell structure. The alloy thin film layer is composed of a variety of high electrically conductive materials (such as molybdenum, copper, aluminum, and silver) in different atomic proportions.

Abstract: A method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition is provided.

Abstract: An electronic apparatus with multiple screens and an image displaying method thereof are provided. The image displaying method is adapted to an electronic apparatus. The electronic apparatus includes a first display unit and a second display unit. The image displaying method includes following steps. By a processing module, a digital file is read, and a content of the digital file is displayed on the first display unit. Whether the content of the digital file includes at least one dynamic image is detected by the processing module. When the content of the digital file includes the at least one dynamic image, the at least one dynamic image is displayed on the second display unit by the processing module.

Abstract: A data downloading method of an e-book reading apparatus, a data transferring method of the e-book reading apparatus and a system thereof are disclosed. The data downloading method comprises the steps of installing a driving module of the e-book reading apparatus on print management interface of an electronic device; connecting the e-book reading apparatus and a data transmission port of the electronic device; launching the print management interface to select the e-book reading apparatus as a printing object; and downloading a file to the e-book reading apparatus via the print management interface.

Abstract: The present invention relates to a multi-screens electronic apparatus and image display method thereof. The method is applicable to an electronic apparatus with a display unit and a touch-sensitive display unit, comprising the following steps: reading a digital file via a processing module and display the content of the digital file on the display unit; choosing a specific region by using a region choosing module; displaying the content of the specific region on the touch-sensitive display unit by the processing module; when a touch control command is received by the touch display, adjusting the range of content on the touch-sensitive display; and adjusting the range of the specific region in the display unit according to adjusted range of the content displayed on the touch-sensitive display unit.

Abstract: A multi-screen electronic device includes a first screen, a second screen, a storage unit, and a central processing unit electrically connected to the first and second screens and the storage unit. Also, a reference material display method applied to the multi-screen electronic device includes the steps of opening an e-book file stored in the storage unit and displaying contents of the e-book file on the first screen of the multi-screen electronic device; searching for a predetermined mark that is shown on the first screen; transmitting the predetermined mark to a predetermined website; and displaying contents sent back from the predetermined website on the second screen of the multi-screen electronic device. Thus, the reference material display method allows a user to read the e-book file compactly.

Abstract: A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (Cu2S) or cuprous selenide (Cu2Se) target. Then, a CIGS thin film is further provided on the thermal expansion buffer layer. Finally, a thermal treatment is conducted for melting to integrate the copper ingredients of different thin film layers, thus improving the bondability between the thin film layers and preventing the cracking or the peeling off of the thin film layers caused by the thermal expansion difference.

Abstract: A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. According to the present invention, the alloy thin film layer is provided between the molybdenum thin film layer and the CIGS thin film layer, serving as a conductive layer of the CIGS solar cell structure. The alloy thin film layer is composed of a variety of high electrically conductive materials (such as molybdenum, copper, aluminum, and silver) in different proportions.

Abstract: A method for preparing a sol-gel solution is provided. During a first stage mixture preparation process, a metal compound mixture is obtained by mixing compounds of Cu, In, Ga, and Se, a diluting dispersant is obtained by adding a diluent into a dispersant, a stabilizing adhesive is obtained by mixing a stabilizer, a leveling agent, and an adhesive together, an anti-freezing coagulant is obtained by mixing an anti-freezer with a retarding coagulant, and a metallic reducing agent is obtained by mixing a reducing agent, a metal complexing agent with a metal abstracting solvent. Then, the metal compound mixture, the diluting dispersant, the stabilizing adhesive, the anti-freezing coagulant, and the metallic reducing agent are mixed, heated and stirred, and then cooled down to obtain a sol-gel solution. The sol-gel solution can be provided for the ink coating technology for configuring the CIGS light absorbing layer of the CIGS solar cell.

Abstract: A coating method for preparing a light absorbing layer of a solar cell is provided. In a non-vacuum environment, an ultrasonic vibrating mixer is employed to mix a CIGS mixture with a mixing fluid to obtain a CIGS coating material. The CIGS coating material is then uniformly coated on a molybdenum (Mo) layer which is driven by a conveyor device, so as to form a CIGS coating material layer having a uniform thickness on the Mo layer. An infrared ray (IR) heating lamp is then used to dry the CIGS coating material layer for removing residue of the mixing fluid remained in the CIGS coating material layer. In such a way, a CIGS light absorbing layer adapted for absorbing a solar energy and converting the absorbed solar energy into an electric energy is obtained. The CIGS light absorbing layer can be then used for fabricating a CIGS solar cell.

Abstract: A light absorbing layer of a CIGS solar cell and a method for fabricating the same are provided. According to the present invention, a cuprous sulfide layer is prepared by a sputtering process. Then, a CIGS sol-gel solution is provided onto the cuprous sulfide layer by an immersion coating, spin coating, printing, or spray coating process. The CIGS sol-gel solution is then baked to form a plurality of a CIGS stack layers containing copper (Cu), indium (In), gallium (Ga), and selenium (Se). A rapid thermal process is then conducted for melting the cuprous sulfide layer and the CIGS stack layers to form a copper/indium/gallium/sulfur/selenium (CIGSS) light absorbing layer. The CIGSS light absorbing layer is provided for a solar cell to improve the photoelectric transformation efficiency and the light absorbance.

Abstract: A method for preparing a sol-gel solution is provided. During a first stage mixture preparation process, a metal compound mixture is obtained by mixing compounds of Cu, In, Ga, and Se, a diluting dispersant is obtained by adding a diluent into a dispersant, a stabilizing adhesive is obtained by mixing a stabilizer, a leveling agent, and an adhesive together, an anti-freezing coagulant is obtained by mixing an anti-freezer with a retarding coagulant, and a metallic reducing agent is obtained by mixing a reducing agent, a metal complexing agent with a metal abstracting solvent. Then, the metal compound mixture, the diluting dispersant, the stabilizing adhesive, the anti-freezing coagulant, and the metallic reducing agent are mixed, heated and stirred, and then cooled down to obtain a sol-gel solution. The sol-gel solution can be provided for the ink coating technology for configuring the CIGS light absorbing layer of the CIGS solar cell.

Abstract: A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. According to the present invention, the alloy thin film layer is provided between the molybdenum thin film layer and the CIGS thin film layer, serving as a conductive layer of the CIGS solar cell structure. The alloy thin film layer is composed of a variety of high electrically conductive materials (such as molybdenum, copper, aluminum, and silver) in different proportions.

Abstract: A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (Cu2S) or cuprous selenide (Cu2Se) target. Then, a CIGS thin film is further provided on the thermal expansion buffer layer. Finally, a thermal treatment is conducted for melting to integrate the copper ingredients of different thin film layers, thus improving the bondability between the thin film layers and preventing the cracking or the peeling off of the thin film layers caused by the thermal expansion difference.

Abstract: An image sensing device and a packaging method thereof is disclosed. The packaging method includes the steps of providing an adhesive layer; placing a substrate, having an opening, on the adhesive layer; disposing an image sensor within the opening on the adhesive layer; adding a filler between the image sensor and the substrate; connecting the image sensor and the substrate via a plurality of bonding wires; and removing the adhesive layer.