Patents by Inventor Lung-Kai MAO

Lung-Kai MAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12209013
    Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.
    Type: Grant
    Filed: August 6, 2023
    Date of Patent: January 28, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
  • Publication number: 20240383744
    Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
  • Patent number: 12134557
    Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: November 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
  • Publication number: 20240290656
    Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.
    Type: Application
    Filed: May 6, 2024
    Publication date: August 29, 2024
    Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
  • Patent number: 12009256
    Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.
    Type: Grant
    Filed: June 20, 2023
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
  • Publication number: 20240153849
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a chip structure including a substrate and a wiring structure over a first surface of the substrate. The semiconductor device structure includes a first seed layer over the wiring structure, a first inner wall of the first enlarged portion, and a second inner wall of the neck portion. The semiconductor device structure includes a second seed layer over a second surface of the substrate, a third inner wall of the second enlarged portion, and the first seed layer over the second inner wall of the neck portion. The second seed layer is in direct contact with the first seed layer.
    Type: Application
    Filed: January 2, 2024
    Publication date: May 9, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li YANG, Wen-Hsiung LU, Lung-Kai MAO, Fu-Wei LIU, Mirng-Ji LII
  • Publication number: 20240120207
    Abstract: A semiconductor package includes a die having a plurality of devices over a first substrate, where the first substrate includes a dopant at a first concentration and the first substrate has a first width along a horizontal direction. The semiconductor package further includes a second substrate fused with the first substrate, where the second substrate includes the dopant at a second concentration greater than the first concentration.
    Type: Application
    Filed: February 15, 2023
    Publication date: April 11, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Lung-Kai Mao, Wen-Hsiung Lu, Pei-Wei Lee, Szu-Hsien Lee, Chieh-Ning Feng
  • Publication number: 20240096647
    Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 21, 2024
    Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
  • Patent number: 11901266
    Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li Yang, Wen-Hsiung Lu, Lung-Kai Mao, Fu-Wei Liu, Mirng-Ji Lii
  • Patent number: 11894241
    Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
  • Publication number: 20240017988
    Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.
    Type: Application
    Filed: August 6, 2023
    Publication date: January 18, 2024
    Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
  • Patent number: 11854835
    Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.
    Type: Grant
    Filed: August 10, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
  • Publication number: 20230352342
    Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.
    Type: Application
    Filed: June 20, 2023
    Publication date: November 2, 2023
    Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
  • Patent number: 11721579
    Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: August 8, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
  • Publication number: 20230060982
    Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li YANG, Wen-Hsiung LU, Lung-Kai MAO, Fu-Wei LIU, Mirng-Ji LII
  • Publication number: 20220384210
    Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
  • Publication number: 20220336275
    Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
  • Publication number: 20220259037
    Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.
    Type: Application
    Filed: May 18, 2021
    Publication date: August 18, 2022
    Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
  • Publication number: 20220238353
    Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.
    Type: Application
    Filed: April 1, 2021
    Publication date: July 28, 2022
    Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
  • Patent number: 11387143
    Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: July 12, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin