Patents by Inventor Lung-Kai MAO
Lung-Kai MAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12209013Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.Type: GrantFiled: August 6, 2023Date of Patent: January 28, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
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Publication number: 20240383744Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.Type: ApplicationFiled: July 26, 2024Publication date: November 21, 2024Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
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Patent number: 12134557Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.Type: GrantFiled: May 18, 2021Date of Patent: November 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
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Publication number: 20240290656Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.Type: ApplicationFiled: May 6, 2024Publication date: August 29, 2024Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
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Patent number: 12009256Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.Type: GrantFiled: June 20, 2023Date of Patent: June 11, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
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Publication number: 20240153849Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a chip structure including a substrate and a wiring structure over a first surface of the substrate. The semiconductor device structure includes a first seed layer over the wiring structure, a first inner wall of the first enlarged portion, and a second inner wall of the neck portion. The semiconductor device structure includes a second seed layer over a second surface of the substrate, a third inner wall of the second enlarged portion, and the first seed layer over the second inner wall of the neck portion. The second seed layer is in direct contact with the first seed layer.Type: ApplicationFiled: January 2, 2024Publication date: May 9, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Li YANG, Wen-Hsiung LU, Lung-Kai MAO, Fu-Wei LIU, Mirng-Ji LII
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Publication number: 20240120207Abstract: A semiconductor package includes a die having a plurality of devices over a first substrate, where the first substrate includes a dopant at a first concentration and the first substrate has a first width along a horizontal direction. The semiconductor package further includes a second substrate fused with the first substrate, where the second substrate includes the dopant at a second concentration greater than the first concentration.Type: ApplicationFiled: February 15, 2023Publication date: April 11, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Lung-Kai Mao, Wen-Hsiung Lu, Pei-Wei Lee, Szu-Hsien Lee, Chieh-Ning Feng
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Publication number: 20240096647Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
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Patent number: 11901266Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.Type: GrantFiled: August 30, 2021Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Li Yang, Wen-Hsiung Lu, Lung-Kai Mao, Fu-Wei Liu, Mirng-Ji Lii
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Patent number: 11894241Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.Type: GrantFiled: April 1, 2021Date of Patent: February 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
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Publication number: 20240017988Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.Type: ApplicationFiled: August 6, 2023Publication date: January 18, 2024Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
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Patent number: 11854835Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.Type: GrantFiled: August 10, 2022Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
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Publication number: 20230352342Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.Type: ApplicationFiled: June 20, 2023Publication date: November 2, 2023Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
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Patent number: 11721579Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.Type: GrantFiled: June 30, 2022Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
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Publication number: 20230060982Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Li YANG, Wen-Hsiung LU, Lung-Kai MAO, Fu-Wei LIU, Mirng-Ji LII
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Publication number: 20220384210Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.Type: ApplicationFiled: August 10, 2022Publication date: December 1, 2022Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
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Publication number: 20220336275Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.Type: ApplicationFiled: June 30, 2022Publication date: October 20, 2022Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
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Publication number: 20220259037Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.Type: ApplicationFiled: May 18, 2021Publication date: August 18, 2022Inventors: Jhao-Yi Wang, Chin-Yu Ku, Wen-Hsiung Lu, Lung-Kai Mao, Ming-Da Cheng
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Publication number: 20220238353Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.Type: ApplicationFiled: April 1, 2021Publication date: July 28, 2022Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
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Patent number: 11387143Abstract: A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.Type: GrantFiled: October 30, 2020Date of Patent: July 12, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin