Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12. The invention additional provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) a nonionicpolymer having a weight average molecular weight of about 300 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 2 cPs, and a pH of about 9 to about 12.

Abstract: A chemical mechanical polishing composition for polishing a substrate including a silicon carbonitride layer, the composition comprising, consisting essentially of, or consisting of a water based liquid carrier, anionic colloidal silica particles dispersed in the liquid carrier, a topography control agent, and having a pH in a range from about 2 to about 7.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising silica particles and alumina particles, wherein the alumina particles are surface-coated with an anionic polymer, and (b) water. The invention also provides a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten, silicon oxide, and nitride, with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) about 0.05 wt. % to about 10 wt. % of an abrasive; (b) a dispersant, wherein the dispersant is a linear or branched C2-C10 alkylenediol; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate by contacting the substrate with the inventive chemical-mechanical polishing composition.

Abstract: A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.

Abstract: Chemical-mechanical polishing (CMP) compositions and methods are described, which are suitable for polishing an aluminum surface. The compositions comprise alumina abrasive particles coated with an anionic polymer, and suspended in an acidic or neutral pH carrier. In some cases, a polishing aid such as silica, a carboxylic acid, a phosphonic acid compound, or a combination thereof may be added to the CMP compositions. The described CMP compositions and methods improve polishing efficacy and reduce surface imperfections on a polished aluminum surface compared to CMP methods using uncoated alumina abrasive.