Patents by Inventor Lung Pao HSIN
Lung Pao HSIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10269886Abstract: An organic electroluminescent display device and a manufacturing method thereof are disclosed. The organic electroluminescent display device includes a substrate, a first thin film transistor disposed on the substrate, a second thin film transistor disposed on the first thin film transistor, a first light emitting element electrically connected with a drain of the first thin film transistor, wherein the first light emitting element comprises a first electrode, a first light emitting layer and a second electrode which are stacked, a second light emitting element electrically connected with a drain of the second thin film transistor, wherein the second light emitting element is disposed on the second thin film transistor and comprises a third electrode, a second light emitting layer and a fourth electrode, wherein the second light emitting element is configured to emit white light.Type: GrantFiled: July 13, 2016Date of Patent: April 23, 2019Assignee: BOE Technology Group Co., Ltd.Inventors: Lung Pao Hsin, Kelvin Chiang
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Patent number: 10141381Abstract: The present invention provides an organic light emitting diode (OLED) display array substrate, a manufacturing method of the same OLED structure and a display apparatus. The OLED array substrate includes a plurality of pixels arranged in an array on a base substrate. Further, each pixel comprises a first sub-pixel and a second sub-pixel displaying different colors. Each sub-pixel comprises a light emitting unit and a control circuit. In addition, an orthogonal projection of the light emitting unit of the first sub-pixel on the base substrate overlaps with an orthogonal projection of the control circuit of the second sub-pixel on the base substrate. According to the OLED display structure of the present disclosure, the region occupied by the control circuit of a second sub-pixel is used to set up the light emitting unit of the first sub-pixel. This can increase the display surface area occupied by the light emitting units in each pixel, thus improve the resolution of the display.Type: GrantFiled: September 18, 2015Date of Patent: November 27, 2018Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Lung Pao Hsin, Chang Yen Wu
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Patent number: 10062311Abstract: Embodiments of the present invention relate to a display substrate and fabricating method thereof and a display device. The display substrate comprises a plurality of pixel groups, wherein each of said pixel groups comprises a plurality of color sub-pixels and a plurality of white sub-pixels. A first driving transistor is provided in a light emitting layer missing region of the color sub-pixel, for driving the color sub-pixel. A second driving transistor and a white sub-pixel are provided on the first driving transistor, the second driving transistor for driving the white sub-pixel. According to the technical solution, white light OLED display may be implemented by forming the white sub-pixel and the driving transistor thereof on the driving transistor of the color sub-pixel, while making use of the space on the thickness dimension of the color sub-pixel, so that the light emitting layer missing region in the color sub-pixel is fully utilized.Type: GrantFiled: January 19, 2016Date of Patent: August 28, 2018Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Lung Pao Hsin, Junjie Lin
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Publication number: 20180226463Abstract: An organic electroluminescent display device and a manufacturing method thereof are disclosed. The organic electroluminescent display device includes a substrate, a first thin film transistor disposed on the substrate, a second thin film transistor disposed on the first thin film transistor, a first light emitting element electrically connected with a drain of the first thin film transistor, wherein the first light emitting element comprises a first electrode, a first light emitting layer and a second electrode which are stacked, a second light emitting element electrically connected with a drain of the second thin film transistor, wherein the second light emitting element is disposed on the second thin film transistor and comprises a third electrode, a second light emitting layer and a fourth electrode, wherein the second light emitting element is configured to emit white light.Type: ApplicationFiled: July 13, 2016Publication date: August 9, 2018Applicant: BOE Technology Group Co., Ltd.Inventors: Lung Pao Hsin, Kelvin Chiang
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Publication number: 20180175120Abstract: The present invention provides an organic light emitting diode (OLED) display array substrate, a manufacturing method of the same OLED structure and a display apparatus. The OLED array substrate includes a plurality of pixels arranged in an array on a base substrate. Further, each pixel comprises a first sub-pixel and a second sub-pixel displaying different colors. Each sub-pixel comprises a light emitting unit and a control circuit. In addition, an orthogonal projection of the light emitting unit of the first sub-pixel on the base substrate overlaps with an orthogonal projection of the control circuit of the second sub-pixel on the base substrate. According to the OLED display structure of the present disclosure, the region occupied by the control circuit of a second sub-pixel is used to set up the light emitting unit of the first sub-pixel. This can increase the display surface area occupied by the light emitting units in each pixel, thus improve the resolution of the display.Type: ApplicationFiled: September 18, 2015Publication date: June 21, 2018Inventors: LUNG PAO HSIN, CHANG YEN WU
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Patent number: 9917203Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display apparatus are disclosed. The manufacturing method includes forming a gate electrode (2), a gate insulating layer (3), an active region (4), a source electrode (5) and a drain electrode (6) on a base substrate (1) with the active region being formed of ZnON material, and implanting the active region (4) with nitrogen ion while it being formed, so as to make the sub-threshold swing amplitude of the thin film transistor less than or equal to 0.5 mV/dec. The manufacturing method reduces the sub-threshold swing amplitude of the thin film transistor and improves the semiconductor characteristics of the thin film transistor.Type: GrantFiled: November 21, 2014Date of Patent: March 13, 2018Assignee: BOE Technology Group Co., Ltd.Inventors: Chunsheng Jiang, Lung Pao Hsin
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Patent number: 9847400Abstract: Embodiments of the present disclosure provide an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a base substrate, a first electrode pattern, a second electrode pattern, and an active layer pattern disposed on the base substrate, a first electrode protection pattern coating the first electrode pattern, and a second electrode protection pattern coating the second electrode pattern. The active layer pattern is disposed between the first electrode pattern and the second electrode pattern. The first electrode protection pattern and the second electrode protection pattern are connected to two sides of the active layer pattern, respectively. The problem that, the active layer pattern cannot be connected to the first electrode pattern and the second electrode pattern due to the surface oxidation, when the first electrode pattern and the second electrode pattern adopt material with low resistance characteristic, is avoided, thus increasing the product yield.Type: GrantFiled: March 28, 2016Date of Patent: December 19, 2017Inventors: Xiangyong Kong, Lung Pao Hsin, Jun Cheng
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Patent number: 9825175Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor includes: an active layer, a source-drain metal layer and a diffusion blocking layer located between the active layer and the source-drain metal layer, wherein, the source-drain metal layer includes a source electrode and a drain electrode; the diffusion blocking layer includes a source blocking part corresponding to a position of the source electrode and a drain blocking part corresponding to a position of the drain electrode; and the diffusion blocking layer is doped with different concentrations of nitrogen from a side close to the source-drain metal layer to a side close to the active layer.Type: GrantFiled: August 14, 2015Date of Patent: November 21, 2017Assignee: BOE Technology Group Co., Ltd.Inventors: Wei Liu, Chunsheng Jiang, Lung Pao Hsin
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Patent number: 9761725Abstract: Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.Type: GrantFiled: February 27, 2015Date of Patent: September 12, 2017Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Lung Pao Hsin, Fengjuan Liu
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Patent number: 9721976Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a display panel are provided. The thin film transistor includes: a gate electrode (2), a source electrode (5) and a drain electrode (6) disposed in a same layer on a base substrate (1); a gate insulating layer (3) disposed on the gate electrode (2), the source electrode (5) and the drain electrode (6); an active layer (4) disposed on the gate insulating layer (3); a passivation layer (7) disposed on the active layer (4) and the gate insulating layer (3).Type: GrantFiled: August 18, 2015Date of Patent: August 1, 2017Assignee: BOE Technology Group Co., Ltd.Inventor: Lung Pao Hsin
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Publication number: 20170194448Abstract: Embodiments of the present disclosure provide an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a base substrate, a first electrode pattern, a second electrode pattern, and an active layer pattern disposed on the base substrate, a first electrode protection pattern coating the first electrode pattern, and a second electrode protection pattern coating the second electrode pattern. The active layer pattern is disposed between the first electrode pattern and the second electrode pattern. The first electrode protection pattern and the second electrode protection pattern are connected to two sides of the active layer pattern, respectively. The problem that, the active layer pattern cannot be connected to the first electrode pattern and the second electrode pattern due to the surface oxidation, when the first electrode pattern and the second electrode pattern adopt material with low resistance characteristic, is avoided, thus increasing the product yield.Type: ApplicationFiled: March 28, 2016Publication date: July 6, 2017Inventors: Xiangyong KONG, Lung Pao HSIN, Jun CHENG
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Publication number: 20170148366Abstract: Embodiments of the present invention relate to a display substrate and fabricating method thereof and a display device. The display substrate comprises a plurality of pixel groups, wherein each of said pixel groups comprises a plurality of color sub-pixels and a plurality of white sub-pixels. A first driving transistor is provided in a light emitting layer missing region of the color sub-pixel, for driving the color sub-pixel. A second driving transistor and a white sub-pixel are provided on the first driving transistor, the second driving transistor for driving the white sub-pixel. According to the technical solution, white light OLED display may be implemented by forming the white sub-pixel and the driving transistor thereof on the driving transistor of the color sub-pixel, while making use of the space on the thickness dimension of the color sub-pixel, so that the light emitting layer missing region in the color sub-pixel is fully utilized.Type: ApplicationFiled: January 19, 2016Publication date: May 25, 2017Inventors: Lung Pao HSIN, Junjie LIN
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Publication number: 20170047451Abstract: Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.Type: ApplicationFiled: February 27, 2015Publication date: February 16, 2017Inventors: Lung Pao Hsin, Fengjuan Liu
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Publication number: 20170040343Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a display panel are provided. The thin film transistor includes: a gate electrode (2), a source electrode (5) and a drain electrode (6) disposed in a same layer on a base substrate (1); a gate insulating layer (3) disposed on the gate electrode (2), the source electrode (5) and the drain electrode (6); an active layer (4) disposed on the gate insulating layer (3); a passivation layer (7) disposed on the active layer (4) and the gate insulating layer (3).Type: ApplicationFiled: August 18, 2015Publication date: February 9, 2017Applicant: BOE TECHNOLOGY GROUP CO., LTD.Inventor: Lung Pao HSIN
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Publication number: 20160372603Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor includes: an active layer, a source-drain metal layer and a diffusion blocking layer located between the active layer and the source-drain metal layer, wherein, the source-drain metal layer includes a source electrode and a drain electrode; the diffusion blocking layer includes a source blocking part corresponding to a position of the source electrode and a drain blocking part corresponding to a position of the drain electrode; and the diffusion blocking layer is doped with different concentrations of nitrogen from a side close to the source-drain metal layer to a side close to the active layer.Type: ApplicationFiled: August 14, 2015Publication date: December 22, 2016Applicant: BOE Technology Group Co., Ltd.Inventors: Wei Liu, Chunsheng Jiang, Lung Pao Hsin
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Publication number: 20160358951Abstract: The embodiments of the present disclosure discloses a TFT driving backplane and method of manufacturing the same, which includes the steps of: forming non-transparent gate electrodes on a transparent insulating substrate, blanketing a gate insulating film on the substrate; forming a patterned photoconductive semiconductor layer on the gate insulating film, the photoconductive semiconductor layer includes a superposing region and over-range regions; converting the over-range regions into conductors to be a source region and a drain region; forming a patterned protection layer to cover the photoconductive semiconductor layer and provided with a pixel electrode contacting hole to expose the drain region; forming a pixel electrode coupled with the drain region; and forming an insulating layer covering the protection layer and exposing a part of the pixel electrode.Type: ApplicationFiled: August 16, 2016Publication date: December 8, 2016Applicant: EVERDISPLAY OPTRONICS (SHANGHAI) LIMITEDInventors: Lung Pao HSIN, Tien Wang HUANG
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Publication number: 20160043228Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display apparatus are disclosed. The manufacturing method includes forming a gate electrode (2), a gate insulating layer (3), an active region (4), a source electrode (5) and a drain electrode (6) on a base substrate (1) with the active region being formed of ZnON material, and implanting the active region (4) with nitrogen ion while it being formed, so as to make the sub-threshold swing amplitude of the thin film transistor less than or equal to 0.5 mV/dec. The manufacturing method reduces the sub-threshold swing amplitude of the thin film transistor and improves the semiconductor characteristics of the thin film transistor.Type: ApplicationFiled: November 21, 2014Publication date: February 11, 2016Applicant: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Chunsheng JIANG, Lung Pao HSIN
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Publication number: 20150311233Abstract: The embodiments of the present disclosure relate to a TFT array substrate and method for manufacturing the same, including: forming a gate electrode on a transparent substrate, and forming a first insulating layer on the gate electrode covering the gate electrode and transparent substrate; forming a patterned IGZO layer on the first insulating layer; processing the IGZO layer to form source region and drain region; forming a second insulating layer on the IGZO layer; and forming contacting holes communicating with the source region and the drain region in the second insulating layer, and depositing electrodes in the contacting holes. The present disclosure need not form the second metal layer so as to omit photolithography and etching processes for forming the second metal layer, which may shorten the manufacturing process, improve the efficiency, and reduce dimension of the TFT.Type: ApplicationFiled: March 26, 2015Publication date: October 29, 2015Inventors: Lung Pao Hsin, Tianwang Huang
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Publication number: 20150129870Abstract: The embodiments of the present disclosure discloses a TFT driving backplane and method of manufacturing the same, which includes the steps of: forming non-transparent gate electrodes on a transparent insulating substrate, blanketing a gate insulating film on the substrate; forming a patterned photoconductive semiconductor layer on the gate insulating film including a superposing region and over-range regions; converting the over-range regions into conductors to be a source region and a drain region; forming a patterned protection layer to cover the photoconductive semiconductor layer and provided with a pixel electrode contacting hole to expose the drain region; forming a pixel electrode coupled with the drain region; and forming an insulating layer covering the protection layer and exposing a part of the pixel electrode. The source region, drain region and channel can be formed in one step by converting photoconductive semiconductor material partially, such that the manufacturing process is simplified.Type: ApplicationFiled: November 10, 2014Publication date: May 14, 2015Inventors: Lung Pao HSIN, Tien Wang HUANG