Patents by Inventor Luo Qiang

Luo Qiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High photosensitivity CMOS image sensor pixel architecture
    Patent number: 7115439
    Abstract: The photosensitive volume of a pixel is extended beyond the photodiode region, which allows the pixel sensitivity to be relatively independent of the photodiode region. In an example embodiment, the photosensitive volume can be maximized by using a CMOS process to remove heavily doped material (e.g., as from in a P well) from the photodiode and to form a pn junction on lightly doped material (e.g., p-type epitaxial layer). The photosensitive volume is thus defined by the larger area of the lightly doped material rather than being merely restricted to the photodiode region. Based on the requirements of signal-to-noise ratios (SNR) and desired dynamic range (DR), a minimized size photodiode (with optimized area and perimeter) can be designed to maximize photo conversion gain, which maximizes sensitivity.
    Type: Grant
    Filed: January 16, 2004
    Date of Patent: October 3, 2006
    Assignee: Eastman Kodak Company
    Inventors: Luo Qiang, Phan Christina, Kindt J. Willem
  • High photosensitivity CMOS image sensor pixel architecture
    Publication number: 20050156206
    Abstract: The photosensitive volume of a pixel is extended beyond the photodiode region, which allows the pixel sensitivity to be relatively independent of the photodiode region. In an example embodiment, the photosensitive volume can be maximized by using a CMOS process to remove heavily doped material (e.g., as from in a P well) from the photodiode and to form a pn junction on lightly doped material (e.g., p-type epitaxial layer). The photosensitive volume is thus defined by the larger area of the lightly doped material rather than being merely restricted to the photodiode region. Based on the requirements of signal-to-noise ratios (SNR) and desired dynamic range (DR), a minimized size photodiode (with optimized area and perimeter) can be designed to maximize photo conversion gain, which maximizes sensitivity.
    Type: Application
    Filed: January 16, 2004
    Publication date: July 21, 2005
    Applicant: National Semiconductor Corporation
    Inventors: Luo Qiang, Phan Christina, Kindt Willem
  • Writing instrument
    Patent number: D665025
    Type: Grant
    Filed: April 4, 2011
    Date of Patent: August 7, 2012
    Assignee: Sanford, L.P.
    Inventors: Amy Li, James Bergman, Michael Albertini, Long Zhijun, Luo Qiang