Abstract: A hollow/porous silicon-based composite material includes a hollow/porous structure, a silicon-carbon composite layer and a carbon coating layer. The silicon-carbon composite layer is formed by uniformly dispersing nano silicon/silicon oxide in a conductive carbon mesh formed by high-temperature pyrolysis of a binder. The composite material is prepared by uniformly mixing nano silicon/silicon oxide, the binder and the salt, and then carrying out spray granulation, high-temperature sintering, water washing for desalination, and a coating treatment. The grain growth of the silicon material is slowed down during the heat treatment process, the pulverization of the material is effectively avoided, the volume expansion effect of the silicon-based material is alleviated, the cycle performance of the silicon-based material is improved, and the conductivity and rate performance of the material is enhanced.

Abstract: A silicon-carbon composite material includes a matrix core, a silicon-carbon composite shell formed by uniformly dispersing nano silicon particles in conductive carbon, and a coating layer. The nano silicon particles are formed by high-temperature pyrolysis of a silicon source, and the conductive carbon is formed by high-temperature pyrolysis of an organic carbon source. The coating layer is a carbon coating layer including at least one layer, and the thickness of its single layer is 0.2-3 ?m. A silicon-carbon composite material precursor is formed by simultaneous vapor deposition and is then subjected to carbon coating to form the pitaya-like silicon-carbon composite material which has advantages of high first-cycle efficiency, low expansion and long cycle. The grain growth of the silicon material is slowed down during the heat treatment process, the pulverization of the material is effectively avoided, and the cycle performance, conductivity and rate performance of the material are enhanced.

Abstract: A silicon-carbon composite material includes a matrix core, a silicon-carbon composite shell formed by uniformly dispersing nano silicon particles in conductive carbon, and a coating layer. The nano silicon particles are formed by high-temperature pyrolysis of a silicon source, and the conductive carbon is formed by high-temperature pyrolysis of an organic carbon source. The coating layer is a carbon coating layer including at least one layer, and the thickness of its single layer is 0.2-3 ?m. A silicon-carbon composite material precursor is formed by simultaneous vapor deposition and is then subjected to carbon coating to form the pitaya-like silicon-carbon composite material which has advantages of high first-cycle efficiency, low expansion and long cycle. The grain growth of the silicon material is slowed down during the heat treatment process, the pulverization of the material is effectively avoided, and the cycle performance, conductivity and rate performance of the material are enhanced.

Abstract: A hollow/porous silicon-based composite material includes a hollow/porous structure, a silicon-carbon composite layer and a carbon coating layer. The silicon-carbon composite layer is formed by uniformly dispersing nano silicon/silicon oxide in a conductive carbon mesh formed by high-temperature pyrolysis of a binder. The composite material is prepared by uniformly mixing nano silicon/silicon oxide, the binder and the salt, and then carrying out spray granulation, high-temperature sintering, water washing for desalination, and a coating treatment. The grain growth of the silicon material is slowed down during the heat treatment process, the pulverization of the material is effectively avoided, the volume expansion effect of the silicon-based material is alleviated, the cycle performance of the silicon-based material is improved, and the conductivity and rate performance of the material is enhanced.

Abstract: An output driver circuit comprises a primary output driver and a secondary output driver, where the primary and secondary output drivers have outputs at an output terminal and inputs at an input terminal.