Patents by Inventor Luong Viêt Phung

Luong Viêt Phung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8384154
    Abstract: A bidirectional power transistor formed horizontally in a semiconductor layer disposed on a heavily-doped semiconductor wafer with an interposed insulating layer, the wafer being capable of being biased to a reference voltage, the product of the average dopant concentration and of the thickness of the semiconductor layer ranging between 5·1011 cm?2 and 5·1012 cm?2.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: February 26, 2013
    Assignees: STMicroelectronics (Tours) SAS, Universite Francois Rabelais UFR Sciences et Techniques
    Inventors: Jean-Baptiste Quoirin, Luong Viêt Phung, Nathalie Batut
  • Publication number: 20110121407
    Abstract: A bidirectional power transistor formed horizontally in a semiconductor layer disposed on a heavily-doped semiconductor wafer with an interposed insulating layer, the wafer being capable of being biased to a reference voltage, the product of the average dopant concentration and of the thickness of the semiconductor layer ranging between 5·1011 cm?2 and 5·1012 cm?2.
    Type: Application
    Filed: November 22, 2010
    Publication date: May 26, 2011
    Applicants: STMicroelectronis (Tours) SAS, Universite Francois Rabelais UFR Sciences et Techniques
    Inventors: Jean-Baptiste Quoirin, Luong Viêt Phung, Nathalie Batut