Patents by Inventor Luoqi Chen
Luoqi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11461532Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.Type: GrantFiled: November 13, 2020Date of Patent: October 4, 2022Assignee: ASML NETHERLANDS B.V.Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye
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Patent number: 11042687Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.Type: GrantFiled: March 17, 2020Date of Patent: June 22, 2021Assignee: ASML Netherlands B.V.Inventors: Luoqi Chen, Jun Ye, Yu Cao
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Publication number: 20210064811Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.Type: ApplicationFiled: November 13, 2020Publication date: March 4, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Peng LIU, Yu CAO, Luoqi CHEN, Jun YE
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Patent number: 10839131Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.Type: GrantFiled: February 1, 2019Date of Patent: November 17, 2020Assignee: ASML Netherlands B.V.Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye
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Publication number: 20200218850Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.Type: ApplicationFiled: March 17, 2020Publication date: July 9, 2020Inventors: Luoqi CHEN, Jun YE, Yu CAO
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Patent number: 10592633Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.Type: GrantFiled: April 20, 2018Date of Patent: March 17, 2020Assignee: ASML Netherlands B.V.Inventors: Luoqi Chen, Jun Ye, Yu Cao
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Patent number: 10423745Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.Type: GrantFiled: November 10, 2014Date of Patent: September 24, 2019Assignee: ASML Netherlands B.V.Inventors: Hua-Yu Liu, Jiangwei Li, Luoqi Chen, Wei Liu, Jiong Jiang
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Patent number: 10424396Abstract: The present disclosure provides a computer-implemented method for analyzing variants from a plurality of nucleic acid sequence reads using a computation pipeline, which comprises a module depending on a location-dependent parameter. The method comprises executing on a processor the steps of: receiving a plurality of nucleic acid sequence reads comprising at least a first nucleic acid sequence read and a second nucleic acid sequence read; mapping the first nucleic acid sequence read and the second nucleic acid sequence read to a first location and a second location in a genome, respectively; setting a first value and a second value for the location-dependent parameter on the basis of the first location and the second location in the genome, respectively; passing the first nucleic acid sequence read and the second nucleic acid sequence read through the module using the first value and the second value, respectively; and generating a variant call.Type: GrantFiled: March 24, 2016Date of Patent: September 24, 2019Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
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Patent number: 10424395Abstract: The present disclosure provides a computer-implemented method of analyzing variants from a plurality of nucleic acid sequence reads. The method uses a computation pipeline having at least one invariable module and at least one variable module, wherein the variable module depends on a variable parameter. The method includes executing on a processor the steps of receiving the plurality of nucleic acid sequence reads; setting a plurality of values for the variable parameter; passing the plurality of the nucleic acid sequence reads through the invariable module to generate an intermediate output; passing the intermediate output through the variable module for multiple rounds, each round using one of the variable values; and generating a plurality of variant calls.Type: GrantFiled: March 24, 2016Date of Patent: September 24, 2019Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
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Patent number: 10401732Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.Type: GrantFiled: March 6, 2017Date of Patent: September 3, 2019Assignee: ASML Netherlands B.V.Inventors: Duan-Fu Hsu, Luoqi Chen, Hanying Feng, Rafael C. Howell, Xinjian Zhou, Yi-Fan Chen
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Publication number: 20190163866Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.Type: ApplicationFiled: February 1, 2019Publication date: May 30, 2019Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye
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Patent number: 10198549Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.Type: GrantFiled: June 6, 2016Date of Patent: February 5, 2019Assignee: ASML Netherlands B.V.Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye
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Publication number: 20180239861Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.Type: ApplicationFiled: April 20, 2018Publication date: August 23, 2018Applicant: ASML NETHERLANDS B.V.Inventors: Luoqi Chen, Jun Ye, Yu Cao
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Patent number: 9953127Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.Type: GrantFiled: August 10, 2015Date of Patent: April 24, 2018Assignee: ASML NETHERLANDS B.V.Inventors: Luoqi Chen, Jun Ye, Yu Cao
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Publication number: 20170176864Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.Type: ApplicationFiled: March 6, 2017Publication date: June 22, 2017Applicant: ASML Netherlands B.V.Inventors: Duan-Fu HSU, Luoqi Chen, Hanying Feng, Rafael C. Howell, Xinjian Zhou, Yi-Fan Chen
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Patent number: 9588438Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.Type: GrantFiled: November 9, 2011Date of Patent: March 7, 2017Assignee: ASML NETHERLANDS B.V.Inventors: Duan-Fu Hsu, Luoqi Chen, Hanying Feng, Rafael C. Howell, Xinjian Zhou, Yi-Fan Chen
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Publication number: 20160357900Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.Type: ApplicationFiled: June 6, 2016Publication date: December 8, 2016Applicant: ASML NETHERLANDS B.V.Inventors: Peng LIU, Yu Cao, Luoqi Chen, Jun Ye
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Publication number: 20160283655Abstract: The present disclosure provides a computer-implemented method for analyzing variants from a plurality of nucleic acid sequence reads using a computation pipeline, which comprises a module depending on a location-dependent parameter. The method comprises executing on a processor the steps of: receiving a plurality of nucleic acid sequence reads comprising at least a first nucleic acid sequence read and a second nucleic acid sequence read; mapping the first nucleic acid sequence read and the second nucleic acid sequence read to a first location and a second location in a genome, respectively; setting a first value and a second value for the location-dependent parameter on the basis of the first location and the second location in the genome, respectively; passing the first nucleic acid sequence read and the second nucleic acid sequence read through the module using the first value and the second value, respectively; and generating a variant call.Type: ApplicationFiled: March 24, 2016Publication date: September 29, 2016Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
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Publication number: 20160283654Abstract: The present disclosure provides a computer-implemented method of analyzing variants from a plurality of nucleic acid sequence reads. The method uses a computation pipeline having at least one invariable module and at least one variable module, wherein the variable module depends on a variable parameter. The method includes executing on a processor the steps of receiving the plurality of nucleic acid sequence reads; setting a plurality of values for the variable parameter; passing the plurality of the nucleic acid sequence reads through the invariable module to generate an intermediate output; passing the intermediate output through the variable module for multiple rounds, each round using one of the variable values; and generating a plurality of variant calls.Type: ApplicationFiled: March 24, 2016Publication date: September 29, 2016Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
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Patent number: 9372957Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.Type: GrantFiled: January 20, 2015Date of Patent: June 21, 2016Assignee: ASML NETHERLANDS B.V.Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye