Patents by Inventor Luoqi Chen

Luoqi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11042687
    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: June 22, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Luoqi Chen, Jun Ye, Yu Cao
  • Publication number: 20210064811
    Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
    Type: Application
    Filed: November 13, 2020
    Publication date: March 4, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Peng LIU, Yu CAO, Luoqi CHEN, Jun YE
  • Patent number: 10839131
    Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: November 17, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye
  • Publication number: 20200218850
    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
    Type: Application
    Filed: March 17, 2020
    Publication date: July 9, 2020
    Inventors: Luoqi CHEN, Jun YE, Yu CAO
  • Patent number: 10592633
    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
    Type: Grant
    Filed: April 20, 2018
    Date of Patent: March 17, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Luoqi Chen, Jun Ye, Yu Cao
  • Patent number: 10424396
    Abstract: The present disclosure provides a computer-implemented method for analyzing variants from a plurality of nucleic acid sequence reads using a computation pipeline, which comprises a module depending on a location-dependent parameter. The method comprises executing on a processor the steps of: receiving a plurality of nucleic acid sequence reads comprising at least a first nucleic acid sequence read and a second nucleic acid sequence read; mapping the first nucleic acid sequence read and the second nucleic acid sequence read to a first location and a second location in a genome, respectively; setting a first value and a second value for the location-dependent parameter on the basis of the first location and the second location in the genome, respectively; passing the first nucleic acid sequence read and the second nucleic acid sequence read through the module using the first value and the second value, respectively; and generating a variant call.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: September 24, 2019
    Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
  • Patent number: 10423745
    Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: September 24, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Hua-Yu Liu, Jiangwei Li, Luoqi Chen, Wei Liu, Jiong Jiang
  • Patent number: 10424395
    Abstract: The present disclosure provides a computer-implemented method of analyzing variants from a plurality of nucleic acid sequence reads. The method uses a computation pipeline having at least one invariable module and at least one variable module, wherein the variable module depends on a variable parameter. The method includes executing on a processor the steps of receiving the plurality of nucleic acid sequence reads; setting a plurality of values for the variable parameter; passing the plurality of the nucleic acid sequence reads through the invariable module to generate an intermediate output; passing the intermediate output through the variable module for multiple rounds, each round using one of the variable values; and generating a plurality of variant calls.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: September 24, 2019
    Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
  • Patent number: 10401732
    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: September 3, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Duan-Fu Hsu, Luoqi Chen, Hanying Feng, Rafael C. Howell, Xinjian Zhou, Yi-Fan Chen
  • Publication number: 20190163866
    Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
    Type: Application
    Filed: February 1, 2019
    Publication date: May 30, 2019
    Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye
  • Patent number: 10198549
    Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: February 5, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye
  • Publication number: 20180239861
    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
    Type: Application
    Filed: April 20, 2018
    Publication date: August 23, 2018
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Luoqi Chen, Jun Ye, Yu Cao
  • Patent number: 9953127
    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: April 24, 2018
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Luoqi Chen, Jun Ye, Yu Cao
  • Publication number: 20170176864
    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.
    Type: Application
    Filed: March 6, 2017
    Publication date: June 22, 2017
    Applicant: ASML Netherlands B.V.
    Inventors: Duan-Fu HSU, Luoqi Chen, Hanying Feng, Rafael C. Howell, Xinjian Zhou, Yi-Fan Chen
  • Patent number: 9588438
    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.
    Type: Grant
    Filed: November 9, 2011
    Date of Patent: March 7, 2017
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Duan-Fu Hsu, Luoqi Chen, Hanying Feng, Rafael C. Howell, Xinjian Zhou, Yi-Fan Chen
  • Publication number: 20160357900
    Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
    Type: Application
    Filed: June 6, 2016
    Publication date: December 8, 2016
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Peng LIU, Yu Cao, Luoqi Chen, Jun Ye
  • Publication number: 20160283655
    Abstract: The present disclosure provides a computer-implemented method for analyzing variants from a plurality of nucleic acid sequence reads using a computation pipeline, which comprises a module depending on a location-dependent parameter. The method comprises executing on a processor the steps of: receiving a plurality of nucleic acid sequence reads comprising at least a first nucleic acid sequence read and a second nucleic acid sequence read; mapping the first nucleic acid sequence read and the second nucleic acid sequence read to a first location and a second location in a genome, respectively; setting a first value and a second value for the location-dependent parameter on the basis of the first location and the second location in the genome, respectively; passing the first nucleic acid sequence read and the second nucleic acid sequence read through the module using the first value and the second value, respectively; and generating a variant call.
    Type: Application
    Filed: March 24, 2016
    Publication date: September 29, 2016
    Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
  • Publication number: 20160283654
    Abstract: The present disclosure provides a computer-implemented method of analyzing variants from a plurality of nucleic acid sequence reads. The method uses a computation pipeline having at least one invariable module and at least one variable module, wherein the variable module depends on a variable parameter. The method includes executing on a processor the steps of receiving the plurality of nucleic acid sequence reads; setting a plurality of values for the variable parameter; passing the plurality of the nucleic acid sequence reads through the invariable module to generate an intermediate output; passing the intermediate output through the variable module for multiple rounds, each round using one of the variable values; and generating a plurality of variant calls.
    Type: Application
    Filed: March 24, 2016
    Publication date: September 29, 2016
    Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
  • Patent number: 9372957
    Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: June 21, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye
  • Patent number: 9262579
    Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: February 16, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Luoqi Chen, Jun Ye, Hong Chen