Patents by Inventor Luping Li
Luping Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11888045Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).Type: GrantFiled: December 21, 2021Date of Patent: January 30, 2024Assignee: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C. H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
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Publication number: 20230337946Abstract: In an embodiment a method for blood glucose detection includes obtaining, by a first electronic device, to-be-measured PPG (Photoplethysmography) data when the first electronic device detects a blood glucose detection instruction of a first user, performing feature extraction on the to-be-measured PPG data in order to obtain to-be-measured PPG feature data, inputting the to-be-measured PPG feature data into a pre-trained blood glucose detection model in order to obtain a blood glucose detection result and displaying first information according to the blood glucose detection result.Type: ApplicationFiled: August 16, 2021Publication date: October 26, 2023Inventors: Dong Lu, Luping Li, Maolin Chen
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Patent number: 11776980Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.Type: GrantFiled: March 13, 2020Date of Patent: October 3, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Luping Li, Jacqueline S. Wrench, Wen Ting Chen, Yixiong Yang, In Seok Hwang, Shih Chung Chen, Srinivas Gandikota
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Publication number: 20230036193Abstract: A method includes: obtaining an electrocardiosignal of a target user; importing the electrocardiosignal into a preset atrial fibrillation signal classification model, to obtain a signal type, of the electrocardiosignal, output by the atrial fibrillation signal classification model, where the atrial fibrillation signal classification model is obtained through training with an atrial fibrillation patient being a model training sample; and calculating, based on the signal type of the electrocardiosignal, a risk level of an atrial fibrillation occurrence, to predict whether the target user is to have an atrial fibrillation attack.Type: ApplicationFiled: December 15, 2020Publication date: February 2, 2023Inventors: Luping Li, Maolin Chen, Yujia Han, Miao Jia, Guangming Guo
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Publication number: 20220389568Abstract: Methods for filling a substrate feature with a seamless metal gate fill are described. Methods comprise sequentially depositing a film on a substrate surface having at least one feature thereon. The at least one feature extends a feature depth from the substrate surface to a bottom surface and has a width defined by a first sidewall and a second sidewall. The film is treated with an oxidizing plasma. Then the film is etched to remove the oxidized film. A second film is deposited to fill the feature, where the second film substantially free of seams and voids.Type: ApplicationFiled: June 8, 2022Publication date: December 8, 2022Applicant: Applied Materials, Inc.Inventors: Subramanian Tamilmani, Srinivas Gandikota, Jianqiu Guo, Luping Li
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Publication number: 20220228264Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.Type: ApplicationFiled: April 6, 2022Publication date: July 21, 2022Inventors: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
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Publication number: 20220165852Abstract: A method of filling a feature in a semiconductor structure includes forming a barrier layer in the feature by one of atomic layer deposition (ALD), chemical vapor deposition (CVD), or physical vapor deposition (PVD); wherein the barrier layer is one of cobalt (Co), molybdenum (Mo), molybdenum nitride (MoN) plus Mo, titanium (Ti), titanium aluminum carbide (TiAlC), or titanium nitride (TiN); and forming a metal layer in the feature and over the barrier layer by one of ALD or CVD; wherein the metal layer is one of aluminum (Al), Co, Mo, ruthenium (Ru), or tungsten (W).Type: ApplicationFiled: November 18, 2021Publication date: May 26, 2022Inventors: Srinivas GANDIKOTA, Yixiong YANG, Jacqueline S. WRENCH, Luping LI, Yong YANG, Seshadri GANGULI
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Patent number: 11306395Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.Type: GrantFiled: June 28, 2017Date of Patent: April 19, 2022Assignee: ASM IP Holding B.V.Inventors: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
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Publication number: 20220115516Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).Type: ApplicationFiled: December 21, 2021Publication date: April 14, 2022Applicant: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C.H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
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Publication number: 20220108916Abstract: A method of forming a contact structure in a semiconductor device having a feature includes forming a barrier layer in the feature, wherein the barrier layer is TiN; and forming a metal layer in the feature and over the barrier layer, wherein the metal layer is at least one of aluminum (Al), ruthenium (Ru), or molybdenum (Mo).Type: ApplicationFiled: September 30, 2021Publication date: April 7, 2022Inventors: Yixiong YANG, Seshadri GANGULI, Srinivas GANDIKOTA, Yong YANG, Jacqueline S. WRENCH, Luping LI
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Patent number: 11245022Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).Type: GrantFiled: May 18, 2020Date of Patent: February 8, 2022Assignee: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C. H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
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Publication number: 20210288086Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.Type: ApplicationFiled: March 13, 2020Publication date: September 16, 2021Applicant: Applied Materials, Inc.Inventors: Luping Li, Jacqueline S. Wrench, Wen Ting Chen, Yixiong Yang, In Seok Hwang, Shih Chung Chen, Srinivas Gandikota
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Patent number: 11062900Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.Type: GrantFiled: December 1, 2019Date of Patent: July 13, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Luping Li, Shih Chung Chen, Kazuya Daito, Lin Dong, Zhebo Chen, Yixiong Yang, Steven Hung
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Publication number: 20200373404Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).Type: ApplicationFiled: May 18, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C.H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
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Publication number: 20200176247Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.Type: ApplicationFiled: December 1, 2019Publication date: June 4, 2020Inventors: LUPING LI, SHIH CHUNG CHEN, KAZUYA DAITO, LIN DONG, ZHEBO CHEN, YIXIONG YANG, STEVEN HUNG
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Patent number: 10400322Abstract: Various examples related to fabrication of thermally stable ultra-high density particle-in-cavity (PIC) nanostructures. In one example, a method includes disposing an anodized aluminum oxide (AAO) template onto a surface of a substrate; removing, from the AAO template, a support layer disposed on a side of the AAO template opposite the surface of the substrate; etching nanocavities into the surface of the substrate using the AAO template as an etch mask; and removing the AAO template from the surface of the substrate. The method can include fabricating the AAO template on an aluminum substrate by anodization of an aluminum film and removing the AAO template from the aluminum substrate after formation of the support layer on the AAO template.Type: GrantFiled: December 2, 2016Date of Patent: September 3, 2019Assignee: THE UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.Inventors: Cheng Xu, Luping Li, Yang Zhao, Kirk Jeremy Ziegler, Justin C. Wong
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Publication number: 20190003052Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.Type: ApplicationFiled: June 28, 2017Publication date: January 3, 2019Inventors: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
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Publication number: 20180363126Abstract: Various examples related to fabrication of thermally stable ultra-high density particle-in-cavity (PIC) nanostructures. In one example, a method includes disposing an anodized aluminum oxide (AAO) template onto a surface of a substrate; removing, from the AAO template, a support layer disposed on a side of the AAO template opposite the surface of the substrate; etching nanocavities into the surface of the substrate using the AAO template as an etch mask; and removing the AAO template from the surface of the substrate. The method can include fabricating the AAO template on an aluminum substrate by anodization of an aluminum film and removing the AAO template from the aluminum substrate after formation of the support layer on the AAO template.Type: ApplicationFiled: December 2, 2016Publication date: December 20, 2018Inventors: Cheng Xu, Luping Li, Yang Zhao, Kirk Jeremy Ziegler, Justin C. Wong
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Patent number: 9629767Abstract: Disclosed is a liftable hospital bed, comprising a bedplate base frame (1) symmetrical about a transverse central plane and a longitudinal central plane, wherein two ends of the bedplate base frame (1) are provided with bed leg rods (2), the lower end of the bed leg rods (2) being hinged to a first roller device (3) in contact with the ground and the upper end of the bed leg rods (2) being connected to a second roller device (4), the second roller device (4) being slidable in tracks (5) on the bedplate base frame (1) and the tracks (5) being parallel to a longitudinal axis of the bedplate base frame (1); connecting rods (6) are hinged to the bed leg rods (2); and a turnover mechanism is further provided for changing included angles between the bed leg rods (2) and the bedplate base frame (1) to lift the bedplate base frame (1), the turnover mechanism comprises the connecting rods (6) and a thrust mechanism, end portions of the thrust mechanism drive the connecting rods (6) to rotate via a hinged four-rod mechType: GrantFiled: January 6, 2013Date of Patent: April 25, 2017Assignee: NINGBO KANGMAILONG MEDICAL APPARATUS CO., LTD.Inventor: Luping Li
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Publication number: 20160220434Abstract: An extendable hospital bed comprises a bed frame for supporting a bed surface and bed legs arranged at two ends of the bed frame, wherein width extending frames and a bed head extending frame located at one end of the bed frame are arranged on the bed frame, the width extending frames are horizontally and parellelly arranged along the bed frame, the bed frame, the width extending frame and the bed head extending frame are jointly laid to form the bed surface, a first hollow pipe is horizontally arranged and a second hollow pipe is longitudinally arranged on the bed frame, a third hollow pipe which is parallel to the first hollow pipe is arranged on the bed head extending frame, a second inserting pipe which is inserted into the second hollow pipe in a sliding mode is fixedly connected with the bed head extending frame, one end of a right angle bent inserting pipe is inserted into the third hollow pipe in a sliding mode, the other end is inserted into an adjacent width extending frame longitudinal hollow pipe,Type: ApplicationFiled: April 10, 2016Publication date: August 4, 2016Inventor: Luping Li