Patents by Inventor Lurng-Sheng Lee

Lurng-Sheng Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bottom electrode of metal-insulator-metal capacitor
    Patent number: 7880213
    Abstract: A structure and a method of fabricating a bottom electrode of a metal-insulator-metal (MIM) capacitor are provided. First, a transition metal layer is formed on a substrate. Thereafter, a self-assembling polymer film having a nano-pattern is formed on the transition metal layer to expose a portion of the transition metal layer. Using the self-assembling polymer film as a mask, the exposed portion of the transition metal layer is treated to undergo a phase change so that the bottom electrode can achieve a nano-level of phase separation. Thereafter, the self-assembling polymer film is removed.
    Type: Grant
    Filed: May 15, 2006
    Date of Patent: February 1, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Wen-Miao Lo, Lurng-Sheng Lee, Pei-Ren Jeng, Cha-Hsin Lin, Ching-Chiun Wang
  • BOTTOM ELECTRODE OF METAL-INSULATOR-METAL CAPACITOR AND METHOD OF FABRICATING THE SAME
    Publication number: 20070166911
    Abstract: A structure and a method of fabricating a bottom electrode of a metal-insulator-metal (MIM) capacitor are provided. First, a transition metal layer is formed on a substrate. Thereafter, a self-assembling polymer film having a nano-pattern is formed on the transition metal layer to expose a portion of the transition metal layer. Using the self-assembling polymer film as a mask, the exposed portion of the transition metal layer is treated to undergo a phase change so that the bottom electrode can achieve a nano-level of phase separation. Thereafter, the self-assembling polymer film is removed.
    Type: Application
    Filed: May 15, 2006
    Publication date: July 19, 2007
    Inventors: Wen-Miao Lo, Lurng-Sheng Lee, Pei-Ren Jeng, Cha-Hsin Lin, Ching-Chiun Wang