Abstract: A semiconductor device includes a substrate structure. The substrate structure includes a protruding engagement member having an inner periphery defining a groove and an outer periphery, an oxide layer on the protruding engagement member, and a bonding material layer on the oxide layer. The semiconductor device also includes a micro-electromechanical system (MEMS) substrate having a bonging pad. The bonding pad of the MEMS substrate is bonded to the bonding material layer of the substrate structure.

Abstract: The present disclosure provides die cutting methods and semiconductor dies. A semiconductor substrate has a test region, isolation regions, and core regions. A device layer, an interconnection layer, and a soldering pad layer are formed on the semiconductor substrate. The soldering layer includes a plurality of soldering pads. A passivation layer covers the soldering pads and the interconnect layer, and is etched to form trenches on the soldering pads above the core regions and the test region. The passivation layer, the interconnect layer, and the device layer are etched to form isolation trenches at junctions of the isolation region and the test region, disconnecting the passivation layer, the interconnect layer and the device layer. A cutting process is performed along the test region, each of the semiconductor substrate, the device layer, the interconnect layer and the soldering pad layer is cut in two.

Abstract: The present disclosure provides die cutting methods and semiconductor dies. A semiconductor substrate has a test region, isolation regions, and core regions. A device layer, an interconnection layer, and a soldering pad layer are formed on the semiconductor substrate. The soldering layer includes a plurality of soldering pads. A passivation layer covers the soldering pads and the interconnect layer, and is etched to form trenches on the soldering pads above the core regions and the test region. The passivation layer, the interconnect layer, and the device layer are etched to form isolation trenches at junctions of the isolation region and the test region, disconnecting the passivation layer, the interconnect layer and the device layer. A cutting process is performed along the test region, each of the semiconductor substrate, the device layer, the interconnect layer and the soldering pad layer is cut in two.

Abstract: A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.

Abstract: A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.