Abstract: The invention relates to a microsystem (1) comprising a substrate (12), a bottom electrode (3) arranged on the substrate (12), a ferroelectric layer (4) arranged on the bottom electrode (3), a top electrode (5) arranged on the ferroelectric layer (4) and an isolation layer (6) that is electrically isolating, that is arranged on the top electrode (5), that extends from the top electrode (5) to the substrate (12) so that the isolation layer (6) covers the bottom electrode (3), the ferroelectric layer (4) and the substrate (12) in a region around the complete circumference of the bottom electrode (3), and the isolation layer (6) has the shape of a ring that confines in its centre a through hole (11) that is arranged in the region of the top electrode (5).

Abstract: The invention relates to a microsystem (1) comprising a substrate (12), a bottom electrode (3) arranged on the substrate (12), a ferroelectric layer (4) arranged on the bottom electrode (3), a top electrode (5) arranged on the ferroelectric layer (4) and an isolation layer (6) that is electrically isolating, that is arranged on the top electrode (5), that extends from the top electrode (5) to the substrate (12) so that the isolation layer (6) covers the bottom electrode (3), the ferroelectric layer (4) and the substrate (12) in a region around the complete circumference of the bottom electrode (3), and the isolation layer (6) has the shape of a ring that confines in its centre a through hole (11) that is arranged in the region of the top electrode (5).

Abstract: Resist masks exposed to high-dose implantation processes may be efficiently removed on the basis of a combination of a plasma-based etch process and a wet chemical etch recipe, wherein both etch steps may include a highly selective etch chemistry in order to minimize substrate material loss and thus dopant loss in sophisticated semiconductor devices. The first plasma-based etch step may provide under-etched areas of the resist mask, which may then be efficiently removed on the basis of the wet chemical etch process.

Abstract: Resist masks exposed to high-dose implantation processes may be efficiently removed on the basis of a combination of a plasma-based etch process and a wet chemical etch recipe, wherein both etch steps may include a highly selective etch chemistry in order to minimize substrate material loss and thus dopant loss in sophisticated semiconductor devices. The first plasma-based etch step may provide under-etched areas of the resist mask, which may then be efficiently removed on the basis of the wet chemical etch process.