Abstract: A semiconductor sensor for direct detection of electrons has a pixel structure in which a capacitance is designed to each pixel that stores a charge and converts the charge into a readable voltage. A conductive layer substantially covers the pixel structure. The conductive layer includes pixel surface coatings, each of which cover an individual pixel. Each pixel surface coating is separated from each adjoining pixel surface coating by a gap. A second conductive layer covers a surface of the gap. An insulation insulates the pixel surface coating from the second conductive layer. The conductive layers may be metal or other conductive, light impervious materials. The second conductive layer may include a capacitor electrode.

Abstract: A semiconductor sensor with a pixel structure with each pixel having an integration electrode. Each pixel has a capacitance that stores charge and converts it into readable voltage. The sensor is suited for the direct detection of electrons (e). A switching unit is installed, whose controllable outputs are connected with at least some integration electrodes and by which a controllable constant or solid potential can be applied to selected integration electrodes, in order to enable a binning of the electrons (e) that are to be detected onto particular integration electrodes (registration pixels). Alternative or additional focusing electrodes are planned which are mainly assembled ring-like around one or more integration electrodes, with controllable outputs of the switching unit being connected with the focusing electrodes for the application of a controllable constant or solid potential, in order to achieve a binning of the electrons that are to be detected onto particular integration electrodes.