Abstract: The invention relates to a laser device (100) comprising a substrate (10), on the surface of which an optical waveguide (11) is arranged, which has an optical resonator (12, 13) with such a resonator length that at least one resonator mode forms a stationary wave in the resonator (12, 13), and an amplification medium that is arranged on a surface of the optical waveguide (11), wherein the amplification medium comprises a photonic crystal (20) having a plurality of column- and/or wall-shaped semiconductor elements (21) which are arranged periodically on the surface of the optical waveguide (11) while protruding from the optical waveguide (11), and wherein the photonic crystal (20) is designed to optically interact with the at least one resonator mode of the optical resonator (12, 13) and to amplify light having a wavelength of the at least one resonator mode of the optical resonator (12, 13). The invention also relates to methods for the operation and production of the laser device.

Abstract: A light emitter device (100) comprises a substrate (10) and a photonic crystal (20), which is arranged on the substrate (10) and comprises pillar- and/or wall-shaped semiconductor elements (21), which are arranged periodically standing out from the substrate (10), wherein the photonic crystal (20) forms a resonator, in which the semiconductor elements (21) are arranged in a first resonator section (22) with a first period (d1), in a second resonator section (23) with a second period (d2) and in a third resonator section (24) with a third period (d3), wherein on the substrate (10) the second resonator section (23) and the third resonator section (24) are arranged on two mutually opposing sides of the first resonator section (22) and the second period (d2) and the third period (d3) differ from the first period (d1), the first resonator section (22) forms a light-emitting medium and the third resonator section (24) forms a coupling-out region, through which a part of the light field in the first resonator sectio

Abstract: A light emitter device (100) comprises a substrate (10) and a photonic crystal (20), which is arranged on the substrate (10) and comprises pillar- and/or wall-shaped semiconductor elements (21), which are arranged periodically standing out from the substrate (10), wherein the photonic crystal (20) forms a resonator, in which the semiconductor elements (21) are arranged in a first resonator section (22) with a first period (d1), in a second resonator section (23) with a second period (d2) and in a third resonator section (24) with a third period (d3), wherein on the substrate (10) the second resonator section (23) and the third resonator section (24) are arranged on two mutually opposing sides of the first resonator section (22) and the second period (d2) and the third period (d3) differ from the first period (d1), the first resonator section (22) forms a light-emitting medium and the third resonator section (24) forms a coupling-out region, through which a part of the light field in the first resonator sectio

Abstract: The invention relates to a laser device (100) comprising a substrate (10), on the surface of which an optical waveguide (11) is arranged, which has an optical resonator (12, 13) with such a resonator length that at least one resonator mode forms a stationary wave in the resonator (12, 13), and an amplification medium that is arranged on a surface of the optical waveguide (11), wherein the amplification medium comprises a photonic crystal (20) having a plurality of column- and/or wall-shaped semiconductor elements (21) which are arranged periodically on the surface of the optical waveguide (11) while protruding from the optical waveguide (11), and wherein the photonic crystal (20) is designed to optically interact with the at least one resonator mode of the optical resonator (12, 13) and to amplify light having a wavelength of the at least one resonator mode of the optical resonator (12, 13). The invention also relates to methods for the operation and production of the laser device.

Abstract: Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type.

Abstract: Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type.