Abstract: A bonding or superfine wire is provided made of copper, with a gold enrichment on the surface thereof, in particular in an amount corresponding to a coating of at most 50 nm. The wire may be bonded by the ball/wedge method, has a copper-colored appearance, and the ball thereof after flame-off has a hardness of less than 95 according to HV0.002. In order to produce the bonding or superfine wire, a copper wire is coated with gold or a copper-gold alloy or gold is introduced into the surface of the copper wire. The wires are bonded to a semiconductor silicon chip.

Abstract: The invention relates to a gold alloy containing 99 wt. %, preferably 99.9 wt. % gold, and 1 to 1000 ppm, preferably 10 to 100 ppm calcium, and 1 to 1000 ppm, preferably 10 to 100 ppm ytterbium or europium or a mixture of ytterbium and europium, as well as a method for producing a homogeneous gold alloy containing europium and/or ytterbium.

Abstract: A bonding or superfine wire is provided made of copper, with a gold enrichment on the surface thereof, in particular in an amount corresponding to a coating of at most 50 nm. The wire may be bonded by the ball/wedge method, has a copper-colored appearance, and the ball thereof after flame-off has a hardness of less than 95 according to HVO.002. In order to produce the bonding or superfine wire, a copper wire is coated with gold or a copper-gold alloy or gold is introduced into the surface of the copper wire. The wires are bonded to a semiconductor silicon chip.

Abstract: A fine wire made of an alloy of gold which contains 0.6 to 2 weight % of nickel, or an alloy of gold which contains 0.1 to 2 weight % of nickel, 0.0001 to 0.1 weight % of alkaline earth metal and/or rare earth metal, and optionally 0.1 to 1.0 weight % of platinum and/or palladium . The fine wire is distinguished by a favorable electrical conductivity and a good ratio of strength to elongation. The fine wire is suitable both for wire bonding of semiconductor devices and for producing the ball bumps of flip-chips.