Patents by Inventor Luz M. Sanchez

Luz M. Sanchez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing
    Patent number: 9761785
    Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: September 12, 2017
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Glen R Fox, Ronald G. Polcawich, Daniel M Potrepka, Luz M Sanchez
  • Stylo-Epitaxial Piezoelectric and Ferroelectric Devices and Method of Manufacturing
    Publication number: 20140265734
    Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.
    Type: Application
    Filed: March 19, 2014
    Publication date: September 18, 2014
    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I
    Inventors: Glen R. Fox, Ronald G. Polcawich, Daniel M. Potrepka, Luz M. Sanchez
  • Stylo-Epitaxial Piezoelectric and Ferroelectric Devices and Method of Manufacturing
    Publication number: 20130093290
    Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.
    Type: Application
    Filed: March 30, 2012
    Publication date: April 18, 2013
    Applicant: U.S. Government as represented by the Secretary of the Army
    Inventors: GLEN R. FOX, Ronald G. Polcawich, Daniel M. Potrepka, Luz M. Sanchez