Abstract: The present invention relates to an electric testing assistance tool in the form a wire nut or electrical connector. The tool is a funnel shaped flame resistant and insulating device and has a top end and a bottom end with curved walls. The top end includes a central hole to receive a testing probe of a tester device. The device has an internal metal spiral thread connected to a metal ball connector. The metal spiral thread twistable about a plurality of wire end leads. The leads extending from the bottom end opening are connected to a target wiring whose electrical parameters and continuity is to be measured using the electric testing assistance tool. The testing probe can be inserted through the central hole to contact the metal ball to measure the electric parameters and continuity of the target wiring.

Abstract: This present invention relates to an electric testing assistance tool in the form a wire nut or electrical connector. The tool is a funnel shaped flame resistant and insulating device and has a top end and a bottom end with curved walls. The top end includes a central hole to receive a testing probe of a tester device. The device has an internal metal spiral thread connected to a metal ball connector. The metal spiral thread twistable about a plurality of wire end leads. The leads extending from the bottom end opening are connected to a target wiring whose electrical parameters and continuity is to be measured using the electric testing assistance tool. The testing probe can be inserted through the central hole to contact the metal ball to measure the electric parameters and continuity of the target wiring.

Abstract: This present invention relates to an electric testing assistance tool in the form a wire nut or electrical connector. The tool is a funnel shaped flame resistant and insulating device and has a top end and a bottom end with curved walls. The top end includes a central hole to receive a testing probe of a tester device. The device has an internal metal spiral thread connected to a metal ball connector. The metal spiral thread twistable about a plurality of wire end leads. The leads extending from the bottom end opening are connected to a target wiring whose electrical parameters and continuity is to be measured using the electric testing assistance tool. The testing probe can be inserted through the central hole to contact the metal ball to measure the electric parameters and continuity of the target wiring.

Abstract: An adjustable wall brace may include: (a) an adjustment portion including a right-hand threaded portion and a left-hand threaded portion; (b) an extension portion including a threaded aperture configured to received at least one of the right-hand threaded portion and the left-hand threaded portion; and (c) a base portion including a threaded aperture configured to received at least one of the right-hand threaded portion and the left-hand threaded portion. A method for manufacturing an adjustable wall brace may include: (a) disposing an extension member within an extension receiving member; (b) receiving a first threaded portion of a dual-threaded adjustment mechanism within a threaded receiving aperture of at least one of the extension member and the extension receiving member; and (c) receiving a second threaded portion of the dual-threaded adjustment within a second threaded receiving aperture.

Abstract: Methods and apparatuses for in-situ cleaning of semiconductor electroplating electrodes to remove plating metal without requiring the manual removal of the electrodes from the semiconductor plating equipment. The electrode is placed into the plating liquid and an electrical current having reverse polarity is passed between the electrode and plating liquid. Plating deposits which have accumulated on the electrode are electrochemically dissolved and removed from the electrode.

Abstract: A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.

Abstract: A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.

Abstract: The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Abstract: The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Abstract: The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Abstract: The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

Abstract: A semiconductor workpiece holder used in electroplating systems for plating metal layers onto a semiconductor workpieces, and is of particular advantage in connection with plating copper onto semiconductor materials. The workpiece holder includes electrode assemblies which have a contact part which connects to a distal end of an electrode shaft and bears against the workpiece and conducts current therebetween. The contact part is preferably made from a corrosion resistant material, such as platinum. The electrode assembly also preferably includes a dielectric layer which covers the distal end of the electrode shaft and seals against the contact part to prevent plating liquid from corroding the joint between these parts.

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure.

Abstract: The present invention is directed to an improved electroplating method, chemistry, and production worthy apparatus for depositing noble metals (e.g., platinum) and their alloys onto the surface of the workpiece, such as a semiconductor wafer, pursuant to manufacturing a microelectronic device, circuit, and/or component. The reliability of the noble metal material deposited using the disclosed method, chemistry, and/or apparatus is significantly better than the reliability of noble metal structures deposited using the teachings of the prior art. This is largely attributable to the low stress of films that are deposited using the teachings disclosed herein. The metals, which can be deposited, include gold, silver, platinum, palladium, ruthenium, iridium, rhodium, osmium and alloys containing these metals.

Abstract: A method and apparatus for processing a microelectronic workpiece. The apparatus can include a vessel configured to receive a processing fluid and can further include a support member having a contacting portion configured to carry the microelectronic workpiece at least proximate to the vessel. The apparatus can further include a heater positioned at least proximate to at least one of the vessel and the support member to heat at least a portion of the support member. Alternatively, the heater can be positioned to heat at least a portion of the microelectronic workpiece in addition to, or in lieu of heating the support member.