Patents by Inventor Lynn Cai
Lynn Cai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7835565Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: GrantFiled: June 8, 2009Date of Patent: November 16, 2010Assignee: Synopsys, Inc.Inventors: Lynn Cai, Linard Karklin, Linyong Pang
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Publication number: 20090245621Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: ApplicationFiled: June 8, 2009Publication date: October 1, 2009Applicant: Synopsys, Inc,Inventors: Lynn Cai, Linard Karklin, Linyong Pang
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Patent number: 7565001Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: GrantFiled: June 13, 2008Date of Patent: July 21, 2009Assignee: Synopsys, Inc.Inventors: Lynn Cai, Linard Karklin, Linyong Pang
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Publication number: 20080260235Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: ApplicationFiled: June 13, 2008Publication date: October 23, 2008Applicant: Synopsys, Inc.Inventors: Lynn Cai, Linard Karklin, Linyong Pang
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Patent number: 7403649Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: GrantFiled: June 28, 2007Date of Patent: July 22, 2008Assignee: Synopsys, Inc.Inventors: Lynn Cai, Linard Karklin, Linyong Pang
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Publication number: 20070292017Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: ApplicationFiled: June 28, 2007Publication date: December 20, 2007Applicant: Synopsys, Inc.Inventors: Lynn Cai, Linard Karklin, Linyong Pang
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Patent number: 7254251Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: GrantFiled: January 25, 2005Date of Patent: August 7, 2007Assignee: Synopsys, Inc.Inventors: Lynn Cai, Linard Karklin, Linyong Pang
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Publication number: 20050190957Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: ApplicationFiled: January 25, 2005Publication date: September 1, 2005Applicant: Synopsys, Inc.Inventors: Lynn Cai, Linard Karklin, Linyong Pang
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Patent number: 6925202Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: GrantFiled: March 20, 2001Date of Patent: August 2, 2005Assignee: Synopsys, Inc.Inventors: Linard Karklin, Linyong Pang, Lynn Cai
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Patent number: 6873720Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: GrantFiled: March 20, 2001Date of Patent: March 29, 2005Assignee: Synopsys, Inc.Inventors: Lynn Cai, Linard Karklin, Linyong Pang
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Patent number: 6870951Abstract: One embodiment of the invention provides a system that facilitates auto-alignment of images for defect inspection and defect analysis. The system operates by first receiving a reference image and a test image. Next, the system creates a horizontal cut line across the reference image and chooses a vertical feature on the reference image with a specified width along the horizontal cut line. The system also creates a vertical cut line across the reference image and chooses a horizontal feature on the reference image with the specified width along the vertical cut line. Finally, the system locates the vertical feature and the horizontal feature on the test image so that the reference image and the test image can be aligned to perform defect inspection and defect analysis.Type: GrantFiled: February 13, 2002Date of Patent: March 22, 2005Assignee: Numerical Technologies, Inc.Inventor: Lynn Cai
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Publication number: 20030152260Abstract: One embodiment of the invention provides a system that facilitates auto-alignment of images for defect inspection and defect analysis. The system operates by first receiving a reference image and a test image. Next, the system creates a horizontal cut line across the reference image and chooses a vertical feature on the reference image with a specified width along the horizontal cut line. The system also creates a vertical cut line across the reference image and chooses a horizontal feature on the reference image with the specified width along the vertical cut line. Finally, the system locates the vertical feature and the horizontal feature on the test image so that the reference image and the test image can be aligned to perform defect inspection and defect analysis.Type: ApplicationFiled: February 13, 2002Publication date: August 14, 2003Applicant: Numerical Techonlogies, Inc.Inventor: Lynn Cai
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Publication number: 20020164065Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: ApplicationFiled: March 20, 2001Publication date: November 7, 2002Applicant: Numerical TechnologiesInventors: Lynn Cai, Linard Karklin, Linyong Pang
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Publication number: 20020164064Abstract: A simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask. The defect severity score is calculated based on a number of factors relating to the changes in critical dimensions of the neighbor features to the defect. A common process window can also be used to provide objective information regarding defect printability. Certain other aspects of the mask relating to mask quality, such as line edge roughness and contact corner rounding, can also be quantified by using the simulated wafer image of the physical mask.Type: ApplicationFiled: March 20, 2001Publication date: November 7, 2002Applicant: Numerical Technologies, Inc.Inventors: Linard Karklin, Linyong Pang, Lynn Cai