Patents by Inventor Lynn T. Wang

Lynn T. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8910090
    Abstract: One illustrative method disclosed herein involves producing an initial circuit layout, prior to decomposing the initial circuit layout, identifying at least one potential non-double-patterning-compliant (NDPC) pattern in the initial circuit layout, fixing the at least one potential non-double-patterning-compliant (NDPC) pattern so as to produce a double-patterning-compliant (DPT) pattern, producing a modified circuit layout by removing the potential non-double-patterning-compliant (NDPC) pattern and adding the double-patterning-compliant (DPT) pattern to the initial circuit layout, and performing design rule checking and double patterning compliance checking on the modified circuit layout.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: December 9, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Lynn T. Wang, Vito Dai, Luigi Capodieci
  • Publication number: 20140245238
    Abstract: One illustrative method disclosed herein involves producing an initial circuit layout, prior to decomposing the initial circuit layout, identifying at least one potential non-double-patterning-compliant (NDPC) pattern in the initial circuit layout, fixing the at least one potential non-double-patterning-compliant (NDPC) pattern so as to produce a double-patterning-compliant (DPT) pattern, producing a modified circuit layout by removing the potential non-double-patterning-compliant (NDPC) pattern and adding the double-patterning-compliant (DPT) pattern to the initial circuit layout, and performing design rule checking and double patterning compliance checking on the modified circuit layout.
    Type: Application
    Filed: February 27, 2013
    Publication date: August 28, 2014
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Lynn T. Wang, Vito Dai, Luigi Capodieci
  • Patent number: 8555215
    Abstract: Methods for fabricating semiconductor devices are provided. In an embodiment, a method of fabricating a semiconductor device includes scanning a circuit design layout and proposing patterns for decomposed layouts. The proposed patterns are then compared with a library of prior patterns including a category of forbidden patterns and a category of preferred patterns. If a selected proposed pattern matches a forbidden pattern, the selected proposed pattern is eliminated. If the selected proposed pattern matches a preferred pattern, then the selected proposed pattern is identified for use in the decomposed layouts. Decomposed layouts are generated from the identified patterns. A plurality of masks is fabricated based on the decomposed layouts. Then a multiple patterning lithographic technique is performed with the plurality of masks on a semiconductor substrate.
    Type: Grant
    Filed: February 20, 2012
    Date of Patent: October 8, 2013
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Yi Zou, Swamy Maddu, Lynn T. Wang, Vito Dai, Luigi Capodieci, Peng Xie
  • Publication number: 20130219347
    Abstract: Methods for fabricating semiconductor devices are provided. In an embodiment, a method of fabricating a semiconductor device includes scanning a circuit design layout and proposing patterns for decomposed layouts. The proposed patterns are then compared with a library of prior patterns including a category of forbidden patterns and a category of preferred patterns. If a selected proposed pattern matches a forbidden pattern, the selected proposed pattern is eliminated. If the selected proposed pattern matches a preferred pattern, then the selected proposed pattern is identified for use in the decomposed layouts. Decomposed layouts are generated from the identified patterns. A plurality of masks is fabricated based on the decomposed layouts. Then a multiple patterning lithographic technique is performed with the plurality of masks on a semiconductor substrate.
    Type: Application
    Filed: February 20, 2012
    Publication date: August 22, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Yi Zou, Swamy Muddu, Lynn T. Wang, Vito Dai, Luigi Capodieci, Peng Xie
  • Patent number: 8516407
    Abstract: A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing a double patterning technology-compliant logical design for the integrated circuit, the logical design including a plurality of elements; scoring the design of one or more of the plurality of elements to produce a design score; modifying the design based at least in part on the design score; generating a mask set implementing the modified logical design; and employing the mask set to implement the logical design in and on a semiconductor substrate.
    Type: Grant
    Filed: January 30, 2012
    Date of Patent: August 20, 2013
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Lynn T. Wang, Sriram Madhavan, Luigi Capodieci
  • Publication number: 20130198696
    Abstract: A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing a double patterning technology-compliant logical design for the integrated circuit, the logical design including a plurality of elements; scoring the design of one or more of the plurality of elements to produce a design score; modifying the design based at least in part on the design score; generating a mask set implementing the modified logical design; and employing the mask set to implement the logical design in and on a semiconductor substrate.
    Type: Application
    Filed: January 30, 2012
    Publication date: August 1, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Lynn T. Wang, Sriram Madhavan, Luigi Capodieci
  • Patent number: 8418105
    Abstract: A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing a drawn layout logical design for the integrated circuit, the logical design including a plurality of patterns; checking the plurality of patterns for double patterning technology compliance; identifying a non-double patterning technology compliant pattern; providing a double patterning technology compliant pattern for replacing the identified non-double patterning technology compliant pattern, thereby creating a modified logical design; generating a mask set implementing the modified logical design; and employing the mask set to implement the modified logical design in and on a semiconductor substrate.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: April 9, 2013
    Assignee: Globalfoundries, Inc.
    Inventors: Lynn T. Wang, Vito Dai, Luigi Capodieci