Abstract: The present invention relates to the treatment of herpes simplex virus (HSV) infection using an anti-HSV antibody. In particular, the anti-HSV antibody specifically binds to the glycoprotein D (gD) of herpes simplex virus-1 (HSV-1) and herpes simplex virus-2 (HSV-2). The treatment of the present invention is effective against drug-resistant and/or recurrent HSV infection.

Abstract: A surface mount device having features on contacts to prevent the surface mount device from tombstoning. The feature may be channel defined by the contact that helps balance a torque/force applied on each side of the surface mount device during a reflow soldering process. The feature may also be a solder mask that helps balance a torque/force applied on each side of the surface mount device during a reflow soldering process.

Abstract: Provided herein are mutations in Bruton's Tyrosine Kinase (BTK) that confer resistance to treatment with a BTK inhibitors, such as Ibrutinib, and compositions and methods for the treatment, diagnosis, and characterization of BTK-inhibitor-resistant cancers.

Abstract: Provided herein are mutations in Bruton's Tyrosine Kinase (BTK) that confer resistance to treatment with a BTK inhibitors, such as Ibrutinib, and compositions and methods for the treatment, diagnosis, and characterization of BTK-inhibitor-resistant cancers.

Abstract: The disclosure is directed to an ex vivo cell culture system and methods of using the cell culture system to identify potential therapeutic agents for the treatment of leukemia or lymphoma, such as chronic lymphocytic leukemia (CLL). The ex vivo culture system comprises (a) a first cell culture comprising bone marrow stromal cells (BMSC) which express one or more exogenous cell signaling molecules; (b) a second cell culture comprising leukemia or lymphoma cells isolated from a human; and optionally (c) one or more soluble cell signaling molecules.

Abstract: A pluggable optical module may include a housing enclosing one or more optical components and one or more electrical components. The pluggable optical module may include a slider to move along an exterior wall of the housing in association with latching or unlatching the pluggable optical module. The pluggable optical module may include an electromagnetic interference (EMI) shield arranged in a gap between the slider and the exterior wall of the housing such that the EMI shield contacts the slider and the exterior wall of the housing. The EMI shield reduce EMI radiation passing through the gap.

Abstract: A pluggable optical module may include a housing enclosing one or more optical components and one or more electrical components. The pluggable optical module may include a slider to move along an exterior wall of the housing in association with latching or unlatching the pluggable optical module. The pluggable optical module may include an electromagnetic interference (EMI) shield arranged in a gap between the slider and the exterior wall of the housing such that the EMI shield contacts the slider and the exterior wall of the housing. The EMI shield reduce EMI radiation passing through the gap.

Abstract: Provided herein are mutations in Bruton's Tyrosine Kinase (BTK) that confer resistance to treatment with a BTK inhibitors, such as Ibrutinib, and compositions and methods for the treatment, diagnosis, and characterization of BTK-inhibitor-resistant cancers.

Abstract: Methods and apparatuses for pattern-based methodology for CAA and defect limited yield analysis are disclosed. Embodiments may include matching one or more patterns within a layer of an integrated circuit design layout to one or more pre-characterized patterns within a pattern library, determining respective critical areas of the one or more patterns based on respective pre-characterized critical areas of the one or more pre-characterized patterns, and predicting a defect limited yield of the layer based on the respective pre-characterized critical areas.

Abstract: A process and apparatus are provided for automated pattern-based semiconductor design layout correction. Embodiments include scanning a drawn semiconductor design layout to determine a difficult-to-manufacture pattern within the drawn semiconductor design layout based on a match with a pre-characterized difficult-to-manufacture pattern, determining a corrected pattern based on a pre-determined correlation between the corrected pattern and the pre-characterized difficult-to-manufacture pattern, and replacing the difficult-to-manufacture pattern with the corrected pattern within the drawn semiconductor design layout.

Abstract: Methodology enabling a reduction in a density difference between two complementary exposure masks and/or windows of a layout and an apparatus for performing the method are disclosed. Embodiments include: determining a layer of an IC design having features to be resolved by first and second masks; determining a difference of density by comparing a first density of a first set of the features with a second density of a second set of the features; determining a region on the layer of a first feature to be resolved by the first mask; and inserting, within the region, a polygon to be resolved by the second mask based on the difference of density.

Abstract: Methodology enabling a reduction in a density difference between two complementary exposure masks and/or windows of a layout and an apparatus for performing the method are disclosed. Embodiments include: determining a layer of an IC design having features to be resolved by first and second masks; determining a difference of density by comparing a first density of a first set of the features with a second density of a second set of the features; determining a region on the layer of a first feature to be resolved by the first mask; and inserting, within the region, a polygon to be resolved by the second mask based on the difference of density.

Abstract: A process and apparatus are provided for automated pattern-based semiconductor design layout correction. Embodiments include scanning a drawn semiconductor design layout to determine a difficult-to-manufacture pattern within the drawn semiconductor design layout based on a match with a pre-characterized difficult-to-manufacture pattern, determining a corrected pattern based on a pre-determined correlation between the corrected pattern and the pre-characterized difficult-to-manufacture pattern, and replacing the difficult-to-manufacture pattern with the corrected pattern within the drawn semiconductor design layout.

Abstract: Disclosed are systems and methods for controlling lateral deformation and reducing axial displacement, also referred to as walking, of a subsea conduit such as a pipeline for conveying produced hydrocarbon fluids. The systems and methods include the installation of rolling assemblies on the conduit at predetermined locations. The rolling assemblies include elements for forming rolling modules rotatable with respect to the conduit. Also disclosed is a system for monitoring displacement of the conduit over time.

Abstract: Disclosed are systems and methods for controlling lateral deformation and reducing axial displacement, also referred to as walking, of a subsea conduit such as a pipeline for conveying produced hydrocarbon fluids. The systems and methods include the installation of rolling assemblies on the conduit at predetermined locations. The rolling assemblies include elements for forming rolling modules rotatable with respect to the conduit. Also disclosed is a system for monitoring displacement of the conduit over time.