Patents by Inventor M. C. Chang

M. C. Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250096045
    Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.
    Type: Application
    Filed: December 2, 2024
    Publication date: March 20, 2025
    Inventors: Zuoming ZHU, Shu-Kwan LAU, Ala MORADIAN, Enle CHOO, Flora Fong-Song CHANG, Vilen K. NESTOROV, Zhiyuan YE, Bindusagar MARATH SANKARATHODI, Maxim D. SHAPOSHNIKOV, Surendra Singh SRIVASTAVA, Zhepeng CONG, Patricia M. LIU, Errol Antonio C. SANCHEZ, Jenny C. LIN, Schubert S. CHU, Balakrishnam R. JAMPANA
  • Patent number: 7446050
    Abstract: A method for improving a polysilicon gate electrode profile to avoid preferential RIE etching in a polysilicon gate electrode etching process including carrying out a multi-step etching process wherein at least one of a lower RF source power and RF bias power are reduced to complete a polysilicon etching process and an in-situ plasma treatment with an inert gas plasma is carried out prior to neutralize an electrical charge imbalance prior to carrying out an overetch step.
    Type: Grant
    Filed: August 4, 2003
    Date of Patent: November 4, 2008
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: M. C. Chang, L. T. Lin, Y. I. Wang, Y. H. Chiu, H. J. Tao
  • Publication number: 20050170544
    Abstract: A method for forming a free standing micro-structural member including providing a substrate; blanket depositing a first sacrificial resist layer over the substrate; exposing and developing the first sacrificial resist layer to form a first resist portion; subjecting the first resist portion to at least a hard bake process to form the first resist portion having a predetermined first smaller volume compared to a desired final resist portion volume; blanket depositing at least a second sacrificial resist layer followed by exposure, development and the at least a hard bake process to form the final resist portion volume; and, depositing at least one structural material layer over the final resist portion.
    Type: Application
    Filed: January 30, 2004
    Publication date: August 4, 2005
    Inventors: M.C. Chang, H.S. Wu, Tsang-Mu Lai
  • Patent number: 4327003
    Abstract: This invention provides a new one step polymerization process suitable for preparing latex and paste resins of PVC polymer or its copolymers. At the beginning of polymerization, a small amount of water (less than 1 part per 4 parts by weight of monomer) having a water-soluble initiator dissolved in it is suspended in a large amount of vinyl chloride monomer and comonomer so as to initiate the reaction. As the reaction proceeds the remaining initiator solution and an emulsifier solution are added continuously or batchwise over an extended period. At the end of the polymerization, a stable latex is obtained having polymer particles about one micron or greater in diameter.
    Type: Grant
    Filed: July 11, 1980
    Date of Patent: April 27, 1982
    Assignee: Industrial Technology Research Institute
    Inventors: Paul L. C. Hao, W. W. Hsu, W. S. Lin, S. N. Tong, H. K. Hung, M. C. Chang