Patents by Inventor M. C. Cheng

M. C. Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High temperature superconductor tape RF coil for magnetic resonance imaging
    Patent number: 6943550
    Abstract: A HTS RF coil is disclosed having at least a factor of three improvement in the SNR over a comparable copper coil and at least a factor of six improvement in Q over a comparable copper coil. A commercially available HTS tape is formed into a loop. High-Q capacitors are soldered across the loop ends. The silver sheath covering the tape is removed through chemical etching. The coil is placed in a holder for mechanical support and protection and covered with a cover having through holes enabling the coolant to directly contact the HTS coil.
    Type: Grant
    Filed: May 9, 2003
    Date of Patent: September 13, 2005
    Assignee: The University of Hong Kong
    Inventors: Frederick M.C. Cheng, Francis K.H. Lee, Edward S. Yang
  • High temperature superconductor tape RF coil for magnetic resonance imaging
    Publication number: 20040222186
    Abstract: A HTS RF coil is disclosed having at least a factor of three improvement in the SNR over a comparable copper coil and at least a factor of six improvement in Q over a comparable copper coil. A commercially available HTS tape is formed into a loop. High-Q capacitors are soldered across the loop ends. The silver sheath covering the tape is removed through chemical etching. The coil is placed in a holder for mechanical support and protection and covered with a cover having through holes enabling the coolant to directly contact the HTS coil.
    Type: Application
    Filed: May 9, 2003
    Publication date: November 11, 2004
    Inventors: Frederick M.C. Cheng, Francis K.H. Lee, Edward S. Yang
  • Method for etching silicon surface
    Patent number: 5902452
    Abstract: The present invention discloses a method for etching a silicon surface or forming alignment marks in a silicon substrate by first coating the substrate with an oxide layer, then depositing and patterning a photoresist layer on top of the oxide layer and forming the alignment marks by a dry etching process utilizing fluorine/oxygen etchant chemistry for the simultaneous etching of the two layers in a single process wherein the oxide layer prevents the contamination of the silicon wafer by any silicon particles formed.
    Type: Grant
    Filed: March 13, 1997
    Date of Patent: May 11, 1999
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: M. C. Cheng, J. S. Liu, C. C. Chang
  • Display for an electronic device
    Patent number: D1025075
    Type: Grant
    Filed: July 11, 2022
    Date of Patent: April 30, 2024
    Assignee: Apple Inc.
    Inventors: Jody Akana, Molly Anderson, Bartley K. Andre, Shota Aoyagi, Anthony Michael Ashcroft, Marine C. Bataille, Jeremy Bataillou, Eric Wesley Bates, Mu-Hua Cheng, Sawyer Isaac Cohen, Markus Diebel, Richard Hung Minh Dinh, M. Evans Hankey, Julian Hoenig, Richard P. Howarth, Jonathan P. Ive, Julian Jaede, Hugh J. Jay, Duncan Robert Kerr, Peter Russell-Clarke, Benjamin Andrew Shaffer, Mikael Silvanto, Sung-Ho Tan, Clement Tissandier, Eugene Antony Whang, Rico Zörkendörfer