Abstract: The present invention concerns a device (10) for the surface treatment of a substrate (1) by dielectric barrier discharge that enables the generation of a cold filamentary plasma at atmospheric pressure, comprising a reaction chamber, in which are positioned means for supporting and/or moving the substrate (2) and at least two electrodes (3, 4) arranged in parallel on either side of the means for supporting and/or moving the substrate (2), of which one electrode (3) is intended to be brought to high voltage and a counter-electrode (4) to be earthed. It is characterised in that the counter-electrode (4) has a width (lce) and a length (Lce) that are respectively smaller than the width (le) and the length (Le) of the electrode (3), and in that the counter-electrode (4) is positioned so that it is enclosed in an orthogonal projection (5) of the electrode (3) on a plane containing the counter-electrode (4).

Abstract: The present invention concerns a device (10) for the surface treatment of a substrate (1) by dielectric barrier discharge that enables the generation of a cold filamentary plasma at atmospheric pressure, comprising a reaction chamber, in which are positioned means for supporting and/or moving the substrate (2) and at least two electrodes (3, 4) arranged in parallel on either side of the means for supporting and/or moving the substrate (2), of which one electrode (3) is intended to be brought to high voltage and a counter-electrode (4) to be earthed. It is characterised in that the counter-electrode (4) has a width (lce) and a length (Lce) that are respectively smaller than the width (le) and the length (Le) of the electrode (3), and in that the counter-electrode (4) is positioned so that it is enclosed in an orthogonal projection (5) of the electrode (3) on a plane containing the counter-electrode (4).

Abstract: A process for surface treatment by dielectric barrier discharge (DBD) comprising the following operations:—feeding or passing a substrate into a reaction chamber (2), in which at least two electrodes (10, 12) and at least one counter-electrode (13, 14, 15) are positioned, wherein at least one dielectric barrier (16) is placed between these at least two electrodes (10, 12) and this at least one counter-electrode (13, 14, 15);—switching an inductance (L1, L2) in series with each of said electrodes (10, 12), wherein said inductances (L1, L2) are wound onto a common magnetic core in such a manner that the resulting magnetic flux of the two inductances is zero when identical currents circulate in the two electrodes (10, 12);—generating a high-frequency electric voltage of such a value that it causes the generation of a plasma between the at least two electrodes (10, 12) and the at least one counter-electrode (13, 14, 15);—feeding into the reaction chamber a mixture, the composition of which is such that on contact