Patents by Inventor M. Kagan Yaran
M. Kagan Yaran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9732440Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.Type: GrantFiled: November 1, 2016Date of Patent: August 15, 2017Assignees: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY, Fraunhofer USAInventors: Jes Asmussen, Timothy A. Grotjohn, Donnie K. Reinhard, Rahul Ramamurti, M. Kagan Yaran, Thomas Schuelke, Michael Becker, David King
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Publication number: 20170114476Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.Type: ApplicationFiled: November 1, 2016Publication date: April 27, 2017Inventors: Jes Asmussen, Timothy A. Grotjohn, Donnie K. Reinhard, Rahul Ramamurti, M. Kagan Yaran, Thomas Schuelke, Michael Becker, David King
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Patent number: 9487858Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.Type: GrantFiled: March 10, 2009Date of Patent: November 8, 2016Assignees: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY, Fraunhofer USAInventors: Jes Asmussen, Timothy Grotjohn, Donnie Reinhard, Rahul Ramamurti, M. Kagan Yaran, Thomas Schuelke, Michael Becker, David King
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Patent number: 9139909Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.Type: GrantFiled: October 22, 2012Date of Patent: September 22, 2015Assignees: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY, Fraunhofer USAInventors: Jes Asmussen, Timothy Grotjohn, Donnie K. Reinhard, Thomas Schuelke, M. Kagan Yaran, Kadek W. Hemawan, Michael Becker, David King, Yajun Gu, Jing Lu
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Patent number: 8668962Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.Type: GrantFiled: October 22, 2012Date of Patent: March 11, 2014Assignees: Board of Trustees of Michigan State University, Fraunhofer USAInventors: Jes Asmussen, Timothy Grotjohn, Donnie K. Reinhard, Thomas Schuelke, M. Kagan Yaran, Kadek W. Hemawan, Michael Becker, David King, Yajun Gu, Jing Lu
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Patent number: 8316797Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.Type: GrantFiled: June 16, 2009Date of Patent: November 27, 2012Assignee: Board of Trustees of Michigan State University Fraunhofer USAInventors: Jes Asmussen, Timothy Grotjohn, Donnie K. Reinhard, Thomas Schuelke, M. Kagan Yaran, Kadek W. Hemawan, Michael Becker, David King, Yajun Gu, Jing Lu
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Publication number: 20100034984Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.Type: ApplicationFiled: June 16, 2009Publication date: February 11, 2010Applicants: Board of Trustees of Michigan State University, Fraunhofer USAInventors: Jes Asmussen, Timothy Grotjohn, Donnie K. Reinhard, Thomas Schuelke, M. Kagan Yaran, Kadek W. Hemawan, Michael Becker, David King, Yajun Gu, Jing Lu
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Publication number: 20090239078Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.Type: ApplicationFiled: March 10, 2009Publication date: September 24, 2009Applicants: Board of Trustees of Michigan State University, Fraunhofer USAInventors: Jes Asmussen, Timothy Grotjohn, Donnie Reinhard, Rahul Ramamurti, M. Kagan Yaran, Thomas Schuelke, Michael Becker, David King