Abstract: Provided herein are methods of treating painful diabetic peripheral neuropathy, such as advanced painful DPN, in a patient by administering to the patient an effective amount of NYX-2925 or a pharmaceutically acceptable salt thereof. Also provided are crystalline forms of 3-hydroxy-2-(5-isobutyryl-1-oxo-2,5-diazaspiro [3,4] octan-2-yl) butanamide.

Abstract: A transfer system for a composite material including: a nonwoven as carrier material and a textile layer of reinforcing fibers, wherein the reinforcing fibers consist of mono- or multifilaments or tapes and the carrier material is adhesively bonded to the layer of reinforcing fibers.

Abstract: A universal bracket includes a first wall, a second wall, and a third wall. The first wall is configured to be fixed to a first circuit card and a second circuit card. The first circuit card and the second circuit card include any of at least two different standardized types of circuit cards. The second wall is opposite the first wall. The third wall extends between the first wall and the second wall and is configured to be fixed to a riser card having a first connector for receiving a first mating connector of the first circuit card and a second connector for receiving a second mating connector of the second circuit card.

Abstract: Methods of treating a disorder associated with elevated NMDAR antibodies in a patient in need thereof are provided comprising, for example, administering to the patient an effective amount of a spiro-?-lactam compound.

Abstract: Provided herein are methods of treating cognitive impairment associated with neurodegenerative disease in a patient by administering to the patient an effective amount of the Compound, or a pharmaceutically acceptable salt thereof.

Abstract: Provided herein are methods of treating fibromyalgia, in a patient by administering to the patient an effective amount of NYX-2925 or a pharmaceutically acceptable salt thereof.

Abstract: A circuit board includes a first locking mechanism configured to secure the circuit board to a chassis. The circuit board also includes a connector disposed at an inboard end of the circuit board. The connector is configured to be electrically connected to a mating connector on either a backplane or a circuit board. The circuit board also includes a second locking mechanism. The second locking mechanism is configured to secure the connector of the circuit board to the mating connector of the backplane or the circuit card.

Abstract: Provided herein are methods of treating painful diabetic peripheral neuropathy, such as advanced painful DPN, in a patient by administering to the patient an effective amount of NYX-2925 or a pharmaceutically acceptable salt thereof. Also provided are crystalline forms of 3-hydroxy-2-(5-isobutyryl-1-oxo-2,5-diazaspiro[3,4]octan-2-yl)butanamide.

Abstract: A circuit board includes a first locking mechanism configured to secure the circuit board to a chassis. The circuit board also includes a connector disposed at an inboard end of the circuit board. The connector is configured to be electrically connected to a mating connector on either a backplane or a circuit board. The circuit board also includes a second locking mechanism. The second locking mechanism is configured to secure the connector of the circuit board to the mating connector of the backplane or the circuit card.

Abstract: Curved, arcuately-bonded liquid-crystal cells that include substrates held together by an edge adhesive cured after the substrates were bent into a congruently curved configuration; methods of making such cells; and, switchable shutters and automatic darkening filters that include such cells.

Abstract: A universal bracket includes a first wall, a second wall, and a third wall. The first wall is configured to be fixed to a first circuit card and a second circuit card. The first circuit card and the second circuit card include any of at least two different standardized types of circuit cards. The second wall is opposite the first wall. The third wall extends between the first wall and the second wall and is configured to be fixed to a riser card having a first connector for receiving a first mating connector of the first circuit card and a second connector for receiving a second mating connector of the second circuit card.

Abstract: Curved, arcuately-bonded liquid-crystal cells that include substrates held together by an edge adhesive cured after the substrates were bent into a congruently curved configuration; methods of making such cells; and, switchable shutters and automatic darkening filters that include such cells.

Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.

Abstract: Curved, arcuately-bonded liquid-crystal cells that include substrates held together by an edge adhesive cured after the substrates were bent into a congruently curved configuration; methods of making such cells; and, switchable shutters and automatic darkening filters that include such cells.

Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.

Abstract: A transfer system for a composite material including: a nonwoven as carrier material and a textile layer of reinforcing fibers, wherein the reinforcing fibers consist of mono- or multifilaments or tapes and the carrier material is adhesively bonded to the layer of reinforcing fibers.

Abstract: Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.

Abstract: Methods and systems for measuring metrology targets smaller than the illumination spot size employed to perform the measurement are described herein. Collected measurement signals contaminated with information from structures surrounding the target area are reconstructed to eliminate the contamination. In some examples, measurement signals associated one or more small targets and one or more large targets located in close proximity to one another are used to train a signal reconstruction model. The model is subsequently used to reconstruct measurement signals from other small targets. In some other examples, multiple measurements of a small target at different locations within the target are de-convolved to estimate target area intensity. Reconstructed measurement signals are determined by a convolution of the illumination spot profile and the target area intensity. In a further aspect, the reconstructed signals are used to estimate values of parameters of interest associated with the measured structures.

Abstract: Methods and systems for creating a measurement model based on measured training data are presented. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measured data collected from other wafers. The measurement models receive measurement data directly as input and provide process parameter values, structure parameter values, or both, as output. The measurement model enables the direct measurement of process parameters. Measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement, may be derived from measurements performed by a combination of multiple, different measurement techniques.

Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.