Abstract: A semiconductor device comprises a substrate, a channel region, and a gate formed in association with the channel region. In one exemplary embodiment, the gate comprises a first material that is formed void free on an interior surface of a gate trench of the gate. A width of the gate trench comprises between about 8 nm and about 65 nm. The gate comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal. In another exemplary embodiment, the gate further comprises a second material formed void free on an interior surface of the first material and comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal.