Abstract: A circuit package for a microwave signal comprises a substrate defining a MMIC surface of the substrate and an opposing non-MMIC surface of the substrate. The substrate is devoid of signal carrying vias. A waveguide is disposed on the MMIC surface of the substrate. A MMIC is disposed on the MMIC surface of the substrate, and the MMIC is in electrical communication with the waveguide. An I/O port is in electrical communication with the waveguide wherein a transmission path for the signal is provided from the I/O port, through the waveguide and to the MMIC. In an alternative exemplary embodiment of the invention, the I/O port of the circuit package is electrically connectable to a PC board. The MMIC surface of the substrate faces the PC board when the I/O port is electrically connected to the PC board.

Abstract: A low cost microwave circuit package having high performance characteristics is disclosed. The package operates in the frequency range up to 90 GHz while requiring less space on the printed circuit board. Space savings is provided by small components and the leadless design of the package. Taking the place of leads is a ball grid array and RF ports. An unlimited number of layout designs are possible within an ?s! matrix close to ##EQU1## within the operating frequency band of the package, for any pair of signal transmission ports.

Abstract: A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials.