Patents by Inventor M. Reaz Shaheed

M. Reaz Shaheed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of manufacturing a stressed MOS transistor structure
    Patent number: 7338847
    Abstract: An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.
    Type: Grant
    Filed: December 27, 2004
    Date of Patent: March 4, 2008
    Assignee: Intel Corporation
    Inventors: M. Reaz Shaheed, Thomas Hoffmann, Mark Armstrong, Christopher P. Auth
  • Silicon germanium heterojunction bipolar transistor with step-up carbon profile
    Patent number: 6972441
    Abstract: A bipolar transistor having a collector connected to a base, the collector including an amount of carbon sufficient to prevent a conduction band barrier at a base-collector junction.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: December 6, 2005
    Assignee: Intel Corporation
    Inventor: M. Reaz Shaheed
  • Increasing stress-enhanced drive current in a MOS transistor
    Patent number: 6870179
    Abstract: An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.
    Type: Grant
    Filed: March 31, 2003
    Date of Patent: March 22, 2005
    Assignee: Intel Corporation
    Inventors: M. Reaz Shaheed, Thomas Hoffmann, Mark Armstrong, Christopher P. Auth
  • Increasing stress-enhanced drive current in a MOS transistor
    Publication number: 20040188670
    Abstract: An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.
    Type: Application
    Filed: March 31, 2003
    Publication date: September 30, 2004
    Inventors: M. Reaz Shaheed, Thomas Hoffmann, Mark Armstrong, Christopher P. Auth
  • Silicon germanium heterojunction bipolar transistor with step-up carbon profile
    Publication number: 20040099880
    Abstract: A bipolar transistor having a collector connected to a base, the collector including an amount of carbon sufficient to prevent a conduction band barrier at a base-collector junction.
    Type: Application
    Filed: November 27, 2002
    Publication date: May 27, 2004
    Inventor: M. Reaz Shaheed